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The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics

Optical non-linearities associated to hydrogenic impurities in InAs/GaAs self-assembled quantum dots under applied electric fields

M. Cristea, E.C. Niculescu, Cristina Truşcǎ

Published Sep 28, 2017• 3 citations
Publisher

Abstract

The effects of the hydrogenic impurity on the electron-related non-linear optical processes in a InAs/GaAs dome-shaped quantum dot with a wetting layer under applied electric fields are studied within the density-matrix formalism. The one-electron energy levels and wave functions are calculated using the effective mass approximation and the finite element method. The non-linear optical absorption, relative refractive index change and non-linear optical rectification associated with interlevel transitions are calculated under a strong probe field excitation for both in-plane and z-polarisation of the incident light. According to our results as the electric field increases the absorption and dispersion peaks decrease and exhibit red shift. Hydrogenic impurity located at the origin induces a blue shift in the optical responses. For the optical absorption coefficient the peaks magnitude is enhanced by the impurity presence independent of the electric field strengths, whereas the non-linear optical rectification is larger in the case with impurity only for zero applied electric field.

DOI
10.1080/14786435.2017.1381775

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The effects of the hydrogenic impurity on the electron-related non-linear optical processes in a InAs/GaAs dome-shaped quantum dot with a wetting layer under applied electric fields are studied within the density-matrix formalism. The one-electron energy levels and wave functions are calculated using the effective mass approximation and the finite element method. The non-linear optical absorption, relative refractive index change and non-linear optical rectification associated with interlevel transitions are calculated under a strong probe field excitation for both in-plane and z-polarisation of the incident light. According to our results as the electric field increases the absorption and dispersion peaks decrease and exhibit red shift. Hydrogenic impurity located at the origin induces a blue shift in the optical responses. For the optical absorption coefficient the peaks magnitude is enhanced by the impurity presence independent of the electric field strengths, whereas the non-linear optical rectification is larger in the case with impurity only for zero applied electric field.
Simultaneous effects of an on-center hydrogenic impurity and band edge non-parabolicity on intersubband optical absorption coefficients and refractive index changes of a typical GaAs/Al x Ga 1−x As spherical quantum dot are theoretically investigated, using the Luttinger—Kohn effective mass equation. So, electronic structure and optical properties of the system are studied by means of the matrix diagonalization technique and compact density matrix approach, respectively. Finally, effects of an impurity, band edge non-parabolicity, incident light intensity and the dot size on the linear, the third-order nonlinear and the total optical absorption coefficients and refractive index changes are investigated. Our results indicate that, the magnitudes of these optical quantities increase and their peaks shift to higher energies as the influences of the impurity and the band edge non-parabolicity are considered. Moreover, incident light intensity and the dot size have considerable effects on the optical absorption coefficients and refractive index changes.
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In the present paper, the linear and non-linear optical properties of GaAs/AlGaAs multiple quantum well with on-center and on-edge delta doping are studied within the effective mass approximation. The delta potential is analytically modeled within each quantum well potential to obtain the energy levels and the corresponding wave functions using the robust finite difference method. The linear and non-linear optical absorption coefficients and changes in the refractive index are studied in the presence of a static magnetic and a periodic laser field using the density matrix approach. The obtained results show that the position of resonances and the amplitude of the optical absorption coefficients and the refractive index changes can be modified by varying the magnetic field and strength and position of doping potential. Lastly, an increase of the optical intensity appreciably changes the total absorption coefficient, as well as the total refractive index changes. Obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices based on the intersubband transition of electrons in δ-doped multiple quantum wells.