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Bulletin of the American Physical Society

Experimental progress with novel surface electrode ion trap structures for quantum information processing

Craig Robert Clark, Matthew G. Blain, Francisco Benito, Chin-wen Chou, M. Descour, Rob Ellis, Raymond A. Haltli, Edwin J. Heller, Shanalyn A. Kemme, Jonathan David Sterk, Boyan Tabakov, Chris P. Tigges, Peter Maunz, Daniel Stick

Published Jun 5, 2013• 0 citations
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IN SITU PLASMA REMOVAL OF SURFACE CONTAMINANTS FROM ION TRAP ELECTRODES

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In this thesis, the construction and implementation of an in situ plasma discharge designed to remove surface contaminants from electrodes in an ion trapping experimental system is presented with results. In recent years, many advances have been made in using ion traps for quantum information processing. All of the criteria defined by DiVincenzo for using ion traps for implementing a quantum computer have been individually demonstrated, and in particular surface traps provide a scalable platform for ions. In order to be used for quantum algorithms, trapped ions need to be cooled to their motional (quantum mechanical) ground state. One of the hurdles in integrating surface ion traps for a quantum computer is minimizing electric field noise, which causes the ion to heat out of its motional ground state and which increases with smaller ion-to-electrode distances realized with surface traps. Surface contamination of trap electrodes is speculated to be the primary source of electric field noise. The main goal achieved by this work was to implement an in situ surface cleaning solution for surface electrode ion traps, which would not modify the ion trap electrode surface metal. Care was taken in applying the RF power in order to localize a plasma near the trap electrodes. A method for characterizing the energy of the plasma ions arriving at the ion trap surface is presented and results for plasma ion energies are shown. Finally, a method for quantifying the effectiveness of plasma cleaning of trap electrodes, using the surface analysis technique of X-ray photoelectron spectroscopy for measuring the amount and kind of surface contaminants, is described. A significant advantage of the trap electrode surface cleaning method presented here is the minimal changes necessary for implementation on a working ion trap experimental system.

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A Silicon Surface Ion-Trap Chip with Dielectric Sidewalls Shielded by Metal Films

홍석준

An ion trap is a device to confine charged particles by utilizing electromagnetic fields.Since the trapped ions have a feasibility of the individual state manipulation, a long coherence time, and an ideal isolation from the surroundings, the ion-trap technology becomes one of the leading candidates for the physical implementation of quantum information processing.In order to build a large-scale integrated iontrap system for realizing complex quantum algorithms, microfabrication technologies have been applied to construct ion traps.The use of micro-electromechanical system (MEMS) ion-trap chip allows a scalable architecture of ion-trap arrays and integration of functional components to the trap chip, but a few side effects also arise.One of the most particular problems is stray fields generated by the charges accumulated on the sidewalls of thick dielectric pillars or the native oxide grown on metal surfaces, since the stray fields lead to ion micromotions which can cause heating and escape of the trapped ions.This dissertation presents a silicon surface ion-trap chip with dielectric sidewalls shielded by metal films.The oxide pillars supporting the top electrodes are fabricated to have overhang structures, and the upper and lower part of the pillars are coated by separate aluminum layers which are electrically isolated from each other.In order to evaluate the effects of the native ii metal oxide on the electrode surface to the charging phenomenon, a trap chip with an additional gold layer on the aluminum electrodes is also fabricated.An ultra-high vacuum (UHV) chamber, electrical connections, and an optical setup are prepared to trap 174 Yb + ions, and the ions are successfully trapped by using the experimental setup including the fabricated ion-trap chip.To evaluate the effectiveness of the proposed electrode structures, charging is intentionally induced on the chip surface by injecting a 355-nm pulse laser with 40-μW power perpendicularly to the chip surface.The intensity of the stray field is estimated by measuring the displacement of ion position after charging is induced.When the Al-based chips with exposed and Al-coated dielectric sidewalls are used, the standard deviation of the intensities of stray fields are 3.53, and 5.63 V/m, respectively.However, the standard deviation of the intensity of stray fields in the case of using Au-coated chip is 1.56 V/m, and any stray field is measured when the laser was injected on the surface or sidewalls of the gold-coated electrodes.These experimental results indicate that the gold coating on the surface of the aluminum electrodes and the sidewalls of dielectric pillars is effective for eliminating the generation of stray fields induced by static charges.

•Jan 1, 2017•0 citations
In this thesis, the construction and implementation of an in situ plasma discharge designed to remove surface contaminants from electrodes in an ion trapping experimental system is presented with results. In recent years, many advances have been made in using ion traps for quantum information processing. All of the criteria defined by DiVincenzo for using ion traps for implementing a quantum computer have been individually demonstrated, and in particular surface traps provide a scalable platform for ions. In order to be used for quantum algorithms, trapped ions need to be cooled to their motional (quantum mechanical) ground state. One of the hurdles in integrating surface ion traps for a quantum computer is minimizing electric field noise, which causes the ion to heat out of its motional ground state and which increases with smaller ion-to-electrode distances realized with surface traps. Surface contamination of trap electrodes is speculated to be the primary source of electric field noise. The main goal achieved by this work was to implement an in situ surface cleaning solution for surface electrode ion traps, which would not modify the ion trap electrode surface metal. Care was taken in applying the RF power in order to localize a plasma near the trap electrodes. A method for characterizing the energy of the plasma ions arriving at the ion trap surface is presented and results for plasma ion energies are shown. Finally, a method for quantifying the effectiveness of plasma cleaning of trap electrodes, using the surface analysis technique of X-ray photoelectron spectroscopy for measuring the amount and kind of surface contaminants, is described. A significant advantage of the trap electrode surface cleaning method presented here is the minimal changes necessary for implementation on a working ion trap experimental system.
In this paper we try to develop a scalable surface-electrode architecture for ion trap quantum information processing. The confinement of the ions by the rf pseudopotential and the movement of the ions by changing the rf pseudopotential are investigated by numerical simulation. Particular concern is paid to the +-shaped junction, which is the connection of different components of the architecture, and also on the place which yields heat and escaping ions. We show the feasibility of fabricating and operating on the architecture for quantum information processing with currently available technology.
An ion trap is a device to confine charged particles by utilizing electromagnetic fields.Since the trapped ions have a feasibility of the individual state manipulation, a long coherence time, and an ideal isolation from the surroundings, the ion-trap technology becomes one of the leading candidates for the physical implementation of quantum information processing.In order to build a large-scale integrated iontrap system for realizing complex quantum algorithms, microfabrication technologies have been applied to construct ion traps.The use of micro-electromechanical system (MEMS) ion-trap chip allows a scalable architecture of ion-trap arrays and integration of functional components to the trap chip, but a few side effects also arise.One of the most particular problems is stray fields generated by the charges accumulated on the sidewalls of thick dielectric pillars or the native oxide grown on metal surfaces, since the stray fields lead to ion micromotions which can cause heating and escape of the trapped ions.This dissertation presents a silicon surface ion-trap chip with dielectric sidewalls shielded by metal films.The oxide pillars supporting the top electrodes are fabricated to have overhang structures, and the upper and lower part of the pillars are coated by separate aluminum layers which are electrically isolated from each other.In order to evaluate the effects of the native ii metal oxide on the electrode surface to the charging phenomenon, a trap chip with an additional gold layer on the aluminum electrodes is also fabricated.An ultra-high vacuum (UHV) chamber, electrical connections, and an optical setup are prepared to trap 174 Yb + ions, and the ions are successfully trapped by using the experimental setup including the fabricated ion-trap chip.To evaluate the effectiveness of the proposed electrode structures, charging is intentionally induced on the chip surface by injecting a 355-nm pulse laser with 40-μW power perpendicularly to the chip surface.The intensity of the stray field is estimated by measuring the displacement of ion position after charging is induced.When the Al-based chips with exposed and Al-coated dielectric sidewalls are used, the standard deviation of the intensities of stray fields are 3.53, and 5.63 V/m, respectively.However, the standard deviation of the intensity of stray fields in the case of using Au-coated chip is 1.56 V/m, and any stray field is measured when the laser was injected on the surface or sidewalls of the gold-coated electrodes.These experimental results indicate that the gold coating on the surface of the aluminum electrodes and the sidewalls of dielectric pillars is effective for eliminating the generation of stray fields induced by static charges.