Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

日本物理学会講演概要集

GaAs/AlAs多重量子井戸における波形制御パルスによる量子ビート生成 III

磨 小島, 喜多隆, 赤羽浩一

Published Jan 1, 2017• 0 citations
OpenAlex

Related papers

5a-C3-12 GaAs-AlAs量子井戸中の励起子の非線形発光(III)

Satoshi Ideshita, 泰章 舛本

秋の分科会講演予稿集•Sep 16, 1988•0 citations

GaAs/GaAlAs 单量子阱双区共腔激光器双稳特性与开关效应

李长英, 张长信, 郭韵 +1 more

ＧａＡｓ／ＧａＡｌＡｓ单量子阱双区共腔激光器双稳特性与开关效应李长英张长信郭韵赵鹏涛（西北大学物理系激光教研室西安７１００６９）单量子阱光双稳激光器（Ｓｉｎｇｌｅｑｕａｎｔｕｍｗｅｌｌａｓｅｒｄｅｖｉｃｅ）是一种兼有双稳、开关、存储整形与放大的多功能...

Dalian Ligong Daxue xuebao•Jan 1, 1997•0 citations

16aCF-5 GaAs/AlAs 多重量子井戸における波形制御パルスによる量子ビート生成

磨 小島, 勇樹 岩崎, 隆 喜多 +1 more

日本物理学会講演概要集•Sep 16, 2015•0 citations

High sensitivity slow light interferometer based on dispersiveproperty of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductor materials

Cai Yuan-Xue, Zhang Yun-Dong, Boshi Dang +3 more

We investigate the optical properties of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors. The results show that the sensitivity of the interferometer can be greatly enhanced by the dispersive property of semiconductor. Furthermore, the analyses show that the semiconductor slow light medium has a more wider working spectral range than gas slow light medium. Moreover, we experimentally demonstrate that the sensitivity of the interferometer based on the semiconductor GaAs is 3.2 times higher than those of traditional interferometers.

Acta Physica Sinica•Jan 1, 2011•2 citations

26aXD-13 GaAs/AlAs多重量子井戸における励起子非線形光学応答制御(量子井戸・超格子・光応答,領域4,半導体,メゾスコピック系・局在)

磨 小島, 太香恵 山下, 隆 喜多 +2 more

日本物理学会講演概要集•Aug 18, 2009•0 citations

Optical nutation in GaAs/GaxA11−xAs quantum well structures

Sharmila Banerjee, Pranay K. Sen

The possibility of occurrence of the coherent optical transient effect known as optical nutation has been analytically established in the semiconductor quantum well (QW) structure, namely GaAs/GaxA11−xAs most extensively used in optical electronics. Ultra-short-pulse low-intensity band-to-band excitation of electrons to the 1s Wannier-Mott exciton state of the crystal has been considered to play an important role in the coherent radiation—QW interaction. Numerical estimations of the complex optical susceptibility and the transmitted intensity under the transient regime reveal ringing behaviour confirming the occurrence of optical nutation in III-V semiconducting QW structures.

Journal of Modern Optics•Aug 1, 1996•3 citations
We investigate the optical properties of Ⅲ-Ⅴ and Ⅱ-Ⅵ semiconductors. The results show that the sensitivity of the interferometer can be greatly enhanced by the dispersive property of semiconductor. Furthermore, the analyses show that the semiconductor slow light medium has a more wider working spectral range than gas slow light medium. Moreover, we experimentally demonstrate that the sensitivity of the interferometer based on the semiconductor GaAs is 3.2 times higher than those of traditional interferometers.
The possibility of occurrence of the coherent optical transient effect known as optical nutation has been analytically established in the semiconductor quantum well (QW) structure, namely GaAs/GaxA11−xAs most extensively used in optical electronics. Ultra-short-pulse low-intensity band-to-band excitation of electrons to the 1s Wannier-Mott exciton state of the crystal has been considered to play an important role in the coherent radiation—QW interaction. Numerical estimations of the complex optical susceptibility and the transmitted intensity under the transient regime reveal ringing behaviour confirming the occurrence of optical nutation in III-V semiconducting QW structures.