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Nonlinear Optical Switching in GaAlAs Waveguides

J. D. R. Valera, Dominic J. Goodwill, Andy C. Walker

Previously reported observations of optical bistability in a GaAs/GaAlAs waveguide cavity included whole-sample thermally induced absorptive and refractive bistability [1] and localised (μs) thermally induced absorptive bistability [2]. Other groups have observed refractive bistability due to an optoelectronic mechanism in MQW GaAs/GaAlAs waveguides [3,4]. In this paper we report the observation of bistability due to thermally induced changes in leaky modes within a GaAs/GaAlAs waveguide and discuss the optimisation of optoelectronic nonlinearities in semiconductor guides of this type. A leaky planar waveguide consists of a low index layer bounded by two higher index layers. These exhibit radiative losses, where for the nth order mode the attenuation coefficient is proportional to (n+1)2 [5]. In this investigation the waveguides used were short enough to allow good transmission of the lower order modes.Previously reported observations of optical bistability in a GaAs/GaAlAs waveguide cavity included whole-sample thermally induced absorptive and refractive bistability [1] and localised (μs) thermally induced absorptive bistability [2]. Other groups have observed refractive bistability due to an optoelectronic mechanism in MQW GaAs/GaAlAs waveguides [3,4]. In this paper we report the observation of bistability due to thermally induced changes in leaky modes within a GaAs/GaAlAs waveguide and discuss the optimisation of optoelectronic nonlinearities in semiconductor guides of this type. A leaky planar waveguide consists of a low index layer bounded by two higher index layers. These exhibit radiative losses, where for the nth order mode the attenuation coefficient is proportional to (n+1)2 [5]. In this investigation the waveguides used were short enough to allow good transmission of the lower order modes.

Nonlinear Guided Waves and Their ApplicationsJan 1, 19892 citations

GaAs/AlGaAs 量子阱中各向异性的自旋相关过程

钱轩

Jan 1, 20110 citations

T型GaAs量子細線の光学応答と動的相関効果 (動的光物性の新展開特集号) -- (閉じ込め系の動的相関)

英文秋山, 正裕吉田

固体物理Nov 1, 20110 citations

Dynamics of switching waves and realization of shift register in optically bistable GaAs/GaAlAs interferometer

George V. Sinitsyn, Sergey P. Apanasevich, Andrey V. Lyakhnovich +4 more

Dynamics of switching waves in optically bistable all- epitaxial GaAs/GaAlAs Fabry-Perot interferometers is studied experimentally. Realization of planar optical shift register based on propagation of switching waves between neighbor pixels in the plane of bistable layer is proposed.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEApr 3, 20020 citations

GaAs 양자우물에서 흡수와 편광소멸의 결맞는 조절 : 시간과 에너지 영역 연구

김대식, 이대수, 이기주 +1 more

한국광학회 학술대회논문집Feb 1, 20000 citations

Model for mirrorless optical bistability in multiple-quantum-well GaAs/GaAlAs due to induced absorption

Y. Q. Li, Joseph W. Haus, C. M. Bowden +1 more

The temperature dependence of the band gap as a function of the local intensity is taken into consideration for the propagation of light in the multiple-quantum-well structure, GaAs/GaAlAs. With appropriate boundary conditions for heat conduction as well as the field, we derive the conditions for bistability that are due to this mechanism. Analyses of the system parameters in connection with experimental data are also given.

Journal of the Optical Society of America BSep 1, 19868 citations

GaAs/GaAlAs 单量子阱双区共腔激光器双稳特性与开关效应

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GaAs/GaAlAs 单量子阱双区共腔激光器双稳特性与开关效应

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