16aCF-5 GaAs/AlAs 多重量子井戸における波形制御パルスによる量子ビート生成

Steffen Knigge, Stefan Zumkley, Georg Wingen +4 more

We report about measurements of optical bistability in hybrid AlAs/GaAs Bragg reflectors. We have estimated an optical switching energy of 0.1 fJmicrometers -2, a switching intensity of about 1 Wcm-2, and an electro-optical modulation of 40% using a voltage swing of 60 V.

磨 小島, 喜多隆, 赤羽浩一

Yasuaki Masumoto, Seigo Tarucha, Hiroshi Okamoto

Absorption saturation of the lowest excitons under the high density excitation is studied in GaAs-AlAs multi-quantum-well structures. Saturation characteristics remarkably depend on the well layer thickness ranging from 53Å to 154Å. These saturation characteristics and possible mechanisms are discussed.

磨 小島, 太香恵 山下, 隆 喜多 +2 more

Robert Kuszelewicz, J. L. Oudar, J. C. Michel +1 more

Compact bistable GaAs étalons with epitaxial GaAs/AlAs Bragg reflectors have been fabricated by metallorganic vapor phase epitaxy. Their monolithic structure is convenient for further technological steps. It has been found that the good thermal conductivity of the mirror layers allows more efficient heat sinking and leads to improved switching characteristics. A 2:1 contrast ratio and a 20 ns switching time have been obtained in the reflective mode, with a 4 mW threshold power and a strongly reduced dependence of the switch-off threshold upon incident pulse duration.

秀樹 市田, 正昭 中山