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Journal of the Physical Society of Japan

Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures

Yasuaki Masumoto, Seigo Tarucha, Hiroshi Okamoto

Published Jan 15, 1986• 24 citations
Publisher

Abstract

Absorption saturation of the lowest excitons under the high density excitation is studied in GaAs-AlAs multi-quantum-well structures. Saturation characteristics remarkably depend on the well layer thickness ranging from 53Å to 154Å. These saturation characteristics and possible mechanisms are discussed.
DOI
10.1143/jpsj.55.57

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The bleaching of the n=1 and n=2 heavy-hole exciton absorption has been observed at room temperature in ternary alloy Al0.37Ga0.63As/AlAs multiple-quantum-well structures by nanoseconds pump-and-probe spectroscopy. The relative variation of the absorption coefficient [(−Δα)/α0] are about 15% and 8%, respectively. The nonlinear absorption coefficient (α2) and the nonlinear absorption cross section has been deduced. The value of the saturation density deduced from our spectra is in good agreement with the theoretical predictions. The influence of the staggered band alignment on the observed process is also discussed.
An examination of the contribution of excitons, compared to the continuum states, to the optical properties of GaAs/AlGaAs multiple quantum wells illuminates the mechanisms underlying nonlinear absorption and nonlinear refraction and yields information which is useful for optimizing devices which incorporate these materials. We have measured the absorption as a function of intensity at three different wavelengths—above the band edge, on the excitonic resonance, and far below the band edge—to separate the effects. We find that different well thicknesses have different saturation intensities both for excitonic and continuum absorption.
The lowest energy two-dimensional exciton in GaAs/GaAlAs multiquantum wells (MQW) is inhomogeneously broadened at low temperature by fluctuations in the layer width. The broadening permits probing of the excitons as a function of position within the inhomogeneous line[1]. At high densities interaction between the excitons becomes important and leads to saturation and to an increase of the homogeneous linewidth[2]. Using the picosecond pump/probe technique we have measured the saturation behavior as a function of exciton energy within the inhomogeneously broadened line. Figure 1 shows the transmission spectrum T of a weak narrowband probe (dotted) and the change in transmission ΔT of the probe induced by the presence of a pump for two different pump wavelength for 102 Å thick layers of GaAs separated by 200 Å layers of AlGaAs. An increase in transmission (holeburning) at the pump wavelength is observed showing that the interaction between resonant excitons is much stronger than between nonresonant excitons. The strength of the hole decreases rapidly on passing through the center of the line towards the high energy side. This is consistent with an increase in the homogeneous linewidth of the higher energy excitons[1,3]. By delaying the probe we measured the rate of decay of the hole which was found to depend strongly on pump intensity. At low intensity the hole lifetime approaches the luminescent lifetime but becomes shorter at exciton densities greater than ~109 excitons/cm2/layer. We attribute this to exciton-exciton scattering leading to spectral diffusion. The behavior was similar in 51 Å and 102 Å layers. In addition to holeburning, Figure 1 shows an increased absorption in the wings of the line whose shape is almost independent of pump wavelength and which is similar to that observed in bulk GaAs[2].
The saturation behavior of the nonlinear index δnNL in the band tail of GaAs/AlGaAs multiple quantum wells is experimentally studied in quasi-steady state and in a low absorption region (below 300 cm−1), where dispersive optical bistability is observed. Measurements at different detunings from the exciton resonance allow us to study the absorption dependence of the saturation parameters. The saturation intensity IS is found inversely proportional to the linear absorption coefficient, while the saturating nonlinear index δnS is approximately constant. This evidences that the nonlinear index saturation is due to a saturation of the carrier density versus light intensity, due to the saturation of the band tail absorption itself.
We present the detailed experimental results of the time-resolved nonlinear luminescence of excitons in undoped GaAs-AlAs quantum wells. The observed nonlinearity results from the saturation in luminescence originated from the phase space filling and exchange effects of carriers. In some temporal profiles of nonlinear luminescence, anomalous anti-correlation profile has been observed. The origin of anti-correlation is ascribed to be the finite rise time of the exciton population at the luminescent tail state in the exciton band.