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Ionic crystals in a linear Paul trap | NIST

Mark G. Raizen, Jonathan Magnolia Gilligan, Jonas Bergquist +2 more

Physical Review AMay 1, 19920 citations

Simulations of ion transport in T-shaped RF-Paul traps

James Rabchuk, Jacob Burress

Bulletin of the American Physical SocietyMar 21, 20050 citations

High Fidelity Transport of Trapped-Ion Qubits through an X-Junction Trap Array | NIST

R. B. Blakestad, Aaron P. VanDevender, C. Ospelkaus +4 more

Nature PhysicsApr 17, 20092 citations

Microfabricated Chip Traps for Ions | NIST

Jason Amini, J. Britton, Dietrich G. Leibfried +1 more

Apr 12, 20112 citations

Silicon microfabricated linear segmented ion traps for quantum technologies

Kaushal Choonee, G. Wilpers, Alastair G. Sinclair

This paper describes a microfabricated linear segmented RF Paul trap for atomic quantum technologies. The microtrap geometry, initially demonstrated in [1], has been augmented and includes a linear array of trapping segments. Trapping of individual and strings of 88Sr+ ions is demonstrated. The fabrication process has been optimized such that for 80 % of the fabricated devices, the achieved geometry is within ± 5 μm (or ± 3 %) of a prescribed design. This is critical for scalable quantum information processing, where arrays of traps with consistent parameters are required.This paper describes a microfabricated linear segmented RF Paul trap for atomic quantum technologies. The microtrap geometry, initially demonstrated in [1], has been augmented and includes a linear array of trapping segments. Trapping of individual and strings of 88Sr+ ions is demonstrated. The fabrication process has been optimized such that for 80 % of the fabricated devices, the achieved geometry is within ± 5 μm (or ± 3 %) of a prescribed design. This is critical for scalable quantum information processing, where arrays of traps with consistent parameters are required.

International Conference on Solid-State Sensors, Actuators and MicrosystemsJun 1, 20172 citations

Scalable arrays of rf Paul traps in degenerate Si

J. Britton, D. Leibfried, J. A. Beall +3 more

We report techniques for the fabrication of multizone linear radio frequency Paul traps that exploit the machinability and electrical conductivity of degenerate silicon. The approach was tested by trapping and laser cooling M24g+ ions in the two following trap geometries: a single-zone two-layer trap and a multizone surface-electrode trap. From the measured ion motional heating rate we determine an electric field spectral density at the ion’s position of approximately 1×10−10 (V/m)2⋅Hz−1 at ωz/2π=1.125 MHz when the ion lies 40 μm above the trap surface. One application of these devices is controlled manipulation of atomic ion qubits, the basis of one form of quantum information processing.We report techniques for the fabrication of multizone linear radio frequency Paul traps that exploit the machinability and electrical conductivity of degenerate silicon. The approach was tested by trapping and laser cooling M24g+ ions in the two following trap geometries: a single-zone two-layer trap and a multizone surface-electrode trap. From the measured ion motional heating rate we determine an electric field spectral density at the ion’s position of approximately 1×10−10 (V/m)2⋅Hz−1 at ωz/2π=1.125 MHz when the ion lies 40 μm above the trap surface. One application of these devices is controlled manipulation of atomic ion qubits, the basis of one form of quantum information processing.

arXiv:0908.1591Applied Physics LettersOct 26, 200943 citations

Scalable arrays of doped silicon RF Paul traps | NIST

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Scalable arrays of doped silicon RF Paul traps | NIST

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