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Arrays with double-stacked NbxSi1-x-Barrier Junctions for Use in Programmable Josephson Voltage Standards driven at 70 GHz | NIST

Franz H. Mueller, Ralf Behr, Ruediger Wendisch, J. Kohlmann, Paul D. Dresselhaus, Samuel P. Benz

Published Jun 16, 2009• 2 citations
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PTB started using the robust NbxSi1-xbarrier junction technology for the fabrication of large arrays for the Programmable Josephson Voltage Standard (PJVS) and for the Josephson Arbitrary Waveform Synthesizer 3 years ago. We demonstrate how Nb-doping of the amorphous Si barrier causes the transition from an underdamped to a desired overdamped junction behavior. Special dc SQUIDs have been used to evaluate junction capacitance and noise properties. The critical current of small junctions as a function of applied magnetic field has been investigated. On the basis of an existing 70 GHz design previously used for 10 V PJVS chips, we fabricated for the first time 20 V circuits with nearly 140 000 double-stacked Josephson junctions. A direct on-chip comparison between the two 10 V halves of the binary-divided array confirmed the metrological suitability of the 20 V circuits for dc and ac applications.

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Programmable Josephson voltage standard (PJVS) circuits were developed that operate at 16 GHz to 20 GHz with operating margins larger than 1 mA. Two circuit designs were demonstrated, each having a total of ~ 300,000 junctions, which were divided into either 16 or 32 sub-arrays. Triple-stacked junctions were used in order to fit the ~300,000 junctions on each circuit. The amorphous NbxSi1-x-barrier junction technology provided a high degree of uniformity of the barrier and junction electrical properties, which was necessary to achieve the 1 mA operating margin. Although the margins on both the 16-array and 32-array circuits were much greater than 1 mA, the circuit yield for the 16-array design was lower because the longer arrays are more sensitive to defects. The use of lumped-element microwave splitters and tapered arrays significantly reduced the microwave input power and increased the operating margins of these designs. In addition, the broadband microwave response of the designs allowed the PJVS output voltage to be continuously adjusted by using the microwave frequency while remaining on margins.

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1 V and 10 V SNS Programmable Voltage Standards for 70 GHz

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Programmable Josephson voltage standards (PJVSs) in combination with fast switchable DC current sources have opened up new applications in the field of low-frequency AC metrology. The growing interest in output voltages of up to plusmn10 V initiated efforts by several National Metrological Institutes to realize 10 V PJVSs. Presently, only 10 V PJVSs from PTB based on SINIS junctions have been successfully incorporated into existing setups for AC metrology. However, the fabrication of 10 V SINIS arrays that are driven at 70 GHz suffers from very low yield. The recent technological progress made at NIST enabled the drop-in replacement of the low-yield SINIS arrays by more robust SNS arrays. The N-material is an amorphous NbxSi1-xalloy near the metal-insulator transition and is deposited by co-sputtering. For the first time, fully operational 1 V and 10 V PJVSs with SNS junctions that are suitable for a 70 GHz drive have been fabricated and tested. This work was done in close cooperation between NIST and PTB.

IEEE Transactions on Applied Superconductivity•Jun 1, 2009•109 citations
PTB started using the robust NbxSi1-xbarrier junction technology for the fabrication of large arrays for the Programmable Josephson Voltage Standard (PJVS) and for the Josephson Arbitrary Waveform Synthesizer 3 years ago. We demonstrate how Nb-doping of the amorphous Si barrier causes the transition from an underdamped to a desired overdamped junction behavior. Special dc SQUIDs have been used to evaluate junction capacitance and noise properties. The critical current of small junctions as a function of applied magnetic field has been investigated. On the basis of an existing 70 GHz design previously used for 10 V PJVS chips, we fabricated for the first time 20 V circuits with nearly 140 000 double-stacked Josephson junctions. A direct on-chip comparison between the two 10 V halves of the binary-divided array confirmed the metrological suitability of the 20 V circuits for dc and ac applications.
Programmable Josephson voltage standard (PJVS) circuits were developed that operate at 16 GHz to 20 GHz with operating margins larger than 1 mA. Two circuit designs were demonstrated, each having a total of ~ 300,000 junctions, which were divided into either 16 or 32 sub-arrays. Triple-stacked junctions were used in order to fit the ~300,000 junctions on each circuit. The amorphous NbxSi1-x-barrier junction technology provided a high degree of uniformity of the barrier and junction electrical properties, which was necessary to achieve the 1 mA operating margin. Although the margins on both the 16-array and 32-array circuits were much greater than 1 mA, the circuit yield for the 16-array design was lower because the longer arrays are more sensitive to defects. The use of lumped-element microwave splitters and tapered arrays significantly reduced the microwave input power and increased the operating margins of these designs. In addition, the broadband microwave response of the designs allowed the PJVS output voltage to be continuously adjusted by using the microwave frequency while remaining on margins.
Programmable Josephson voltage standards (PJVSs) in combination with fast switchable DC current sources have opened up new applications in the field of low-frequency AC metrology. The growing interest in output voltages of up to plusmn10 V initiated efforts by several National Metrological Institutes to realize 10 V PJVSs. Presently, only 10 V PJVSs from PTB based on SINIS junctions have been successfully incorporated into existing setups for AC metrology. However, the fabrication of 10 V SINIS arrays that are driven at 70 GHz suffers from very low yield. The recent technological progress made at NIST enabled the drop-in replacement of the low-yield SINIS arrays by more robust SNS arrays. The N-material is an amorphous NbxSi1-xalloy near the metal-insulator transition and is deposited by co-sputtering. For the first time, fully operational 1 V and 10 V PJVSs with SNS junctions that are suitable for a 70 GHz drive have been fabricated and tested. This work was done in close cooperation between NIST and PTB.