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Bulletin of the American Physical Society

Leakage of The Quantum Dot Hybrid Qubit in The Strong Driving Regime

Yuan‐Chi Yang, Mark G. Friesen, S. N. Coppersmith

Published Mar 14, 2016• 0 citations
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Performing qubit gate operations as quickly as possible can be important to minimize the effects of decoherence. For resonant gates, this requires applying a strong ac drive. However, strong driving can present control challenges by causing leakage to levels that lie outside the qubit subspace. Strong driving can also present theoretical challenges because preferred tools such as the rotating wave approximation can break down, resulting in complex dynamics that are difficult to control. Here we analyze resonant $X$ rotations of a silicon-quantum-double-dot hybrid qubit within a dressed-state formalism, obtaining results beyond the rotating wave approximation. We obtain analytic formulas for the optimum driving frequency and the Rabi frequency, which are both affected by strong driving. While the qubit states exhibit fast oscillations due to counter-rotating terms and leakage, we show that they can be suppressed to the point that gate fidelities above $99.99%$ are possible, in the absence of decoherence. Hence decoherence mechanisms, rather than strong-driving effects, should represent the limiting factor for resonant-gate fidelities in quantum dot hybrid qubits.

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Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operating points seldom coincide. Here we theoretically investigate protocols, based on transverse or longitudinal sideband driving, for implementing two-qubit gates between quantum-dot hybrid qubits, mediated by a microwave cavity. The rich physics in these qubits gives rise to two types of sweet spots, which can occur at operating points with strong charge dipole moments. Such strong interactions provide new opportunities for off-resonant gating, thereby removing one of the main obstacles for long-distance two-qubit gates. We find that the transverse driving scheme yields faster gates, while longitudinal driving yields gates that are more resilient to photon decay. Our results suggest that the numerous tuning knobs of quantum-dot hybrid qubits make them good candidates for strong coupling. In particular, we show that off-resonant red-sideband-mediated two-qubit gates can exhibit fidelities greater than $95%$ for realistic operating parameters, and we describe improvements that could potentially yield gate fidelities greater than $99%$.

arXiv:2106.10555•Physical Review A•Sep 27, 2021•7 citations
Performing qubit gate operations as quickly as possible can be important to minimize the effects of decoherence. For resonant gates, this requires applying a strong ac drive. However, strong driving can present control challenges by causing leakage to levels that lie outside the qubit subspace. Strong driving can also present theoretical challenges because preferred tools such as the rotating wave approximation can break down, resulting in complex dynamics that are difficult to control. Here we analyze resonant XXX rotations of a silicon-quantum-double-dot hybrid qubit within a dressed-state formalism, obtaining results beyond the rotating wave approximation. We obtain analytic formulas for the optimum driving frequency and the Rabi frequency, which are both affected by strong driving. While the qubit states exhibit fast oscillations due to counter-rotating terms and leakage, we show that they can be suppressed to the point that gate fidelities above 99.9999.99%99.99 are possible, in the absence of decoherence. Hence decoherence mechanisms, rather than strong-driving effects, should represent the limiting factor for resonant-gate fidelities in quantum dot hybrid qubits.
We present a unified study of charge and spin qubits encoded in a single interacting quantum dot tunnel-coupled to Rashba fermionic leads. The dot is described by an Anderson impurity Hamiltonian with either repulsive or attractive local interactions and a magnetic field of arbitrary orientation. In the repulsive regime, a spin qubit is encoded in the singly occupied spin sector, whereas in the attractive regime, close to the degeneracy between the empty and doubly occupied configurations, these two states define a charge-qubit subspace. We combine a weak-coupling Lindblad master equation in the Markovian secular limit with numerically controlled matrix-product-state simulations of the full dot-reservoir system. In equilibrium, we identify magnetic pair breaking in the attractive regime and a weak Rashba-induced magnetic anisotropy when the magnetic field is rotated relative to the spin-orbit axis. In the dynamical regime, relaxation and decoherence are controlled by the energetic gap between the logical manifold and nearby leakage states, and are further enhanced by Rashba-dependent tunneling. These findings show that even a minimal Anderson-impurity description captures key ingredients for coherent spin and charge qubits: the energetic structure of leakage states and spin-orbit-dependent dot-lead hybridization.
Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operating points seldom coincide. Here we theoretically investigate protocols, based on transverse or longitudinal sideband driving, for implementing two-qubit gates between quantum-dot hybrid qubits, mediated by a microwave cavity. The rich physics in these qubits gives rise to two types of sweet spots, which can occur at operating points with strong charge dipole moments. Such strong interactions provide new opportunities for off-resonant gating, thereby removing one of the main obstacles for long-distance two-qubit gates. We find that the transverse driving scheme yields faster gates, while longitudinal driving yields gates that are more resilient to photon decay. Our results suggest that the numerous tuning knobs of quantum-dot hybrid qubits make them good candidates for strong coupling. In particular, we show that off-resonant red-sideband-mediated two-qubit gates can exhibit fidelities greater than 9595%95 for realistic operating parameters, and we describe improvements that could potentially yield gate fidelities greater than 9999%99.