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arXiv:2106.10555 · Physical Review A

Long-range two-hybrid-qubit gates mediated by a microwave cavity with red sidebands

J. C. Abadillo-Uriel, Cameron King, S. N. Coppersmith, Mark G. Friesen

Published Sep 27, 2021• 7 citations

Abstract

Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operating points seldom coincide. Here we theoretically investigate protocols, based on transverse or longitudinal sideband driving, for implementing two-qubit gates between quantum-dot hybrid qubits, mediated by a microwave cavity. The rich physics in these qubits gives rise to two types of sweet spots, which can occur at operating points with strong charge dipole moments. Such strong interactions provide new opportunities for off-resonant gating, thereby removing one of the main obstacles for long-distance two-qubit gates. We find that the transverse driving scheme yields faster gates, while longitudinal driving yields gates that are more resilient to photon decay. Our results suggest that the numerous tuning knobs of quantum-dot hybrid qubits make them good candidates for strong coupling. In particular, we show that off-resonant red-sideband-mediated two-qubit gates can exhibit fidelities greater than $95%$ for realistic operating parameters, and we describe improvements that could potentially yield gate fidelities greater than $99%$.

DOI: 10.1103/physreva.104.032612

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Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operating points seldom coincide. Here we theoretically investigate protocols, based on transverse or longitudinal sideband driving, for implementing two-qubit gates between quantum-dot hybrid qubits, mediated by a microwave cavity. The rich physics in these qubits gives rise to two types of sweet spots, which can occur at operating points with strong charge dipole moments. Such strong interactions provide new opportunities for off-resonant gating, thereby removing one of the main obstacles for long-distance two-qubit gates. We find that the transverse driving scheme yields faster gates, while longitudinal driving yields gates that are more resilient to photon decay. Our results suggest that the numerous tuning knobs of quantum-dot hybrid qubits make them good candidates for strong coupling. In particular, we show that off-resonant red-sideband-mediated two-qubit gates can exhibit fidelities greater than

95%

for realistic operating parameters, and we describe improvements that could potentially yield gate fidelities greater than

99%

.

High-Fidelity Single-Qubit Gates Via Strongly Driving of a Double Quantum Dot Hybrid Qubit with

1/f

Charge Noise

Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of

1/f

charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve

X_{\pi}

gates with fidelities higher than

99.9\%

.

Semiconductor double quantum-dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of

1/f

charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve ${X}_{\ensuremath{\pi}}$ gates with fidelities higher than

99.9%

.

Abstract A fundamental challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to take advantage of physical resources in different regimes, and to access optimal working points, sweet spots, where dephasing is minimized. Here, we explore an important resource for singlet-triplet qubits: a transverse sweet spot (TSS) that enables transitions between qubit states, a strong dipolar coupling, and leading-order protection from electrical fluctuations. Of particular interest is the possibility of transitioning between the TSS and symmetric operating points while remaining continuously protected. This arrangement is ideal for coupling qubits to a microwave cavity, because it combines tunability of the coupling with noise insensitivity. We perform simulations with

1/f

1∕f-type electrical noise, demonstrating that two-qubit gates mediated by a resonator can achieve fidelities >99% under realistic conditions.

Recent experiments with silicon qubits demonstrated strong coupling of a microwave resonator to the spin of a single electron in a double quantum dot, opening up the possibility of long-range spin-spin interactions. We present our theoretical calculation of effective interactions between distant quantum dot spins coupled by a resonator, and propose a protocol for fast, high-fidelity two-qubit gates consistent with experimentally demonstrated capabilities. Our simulations show that, in the presence of noise, spin-spin entangling gates significantly outperform cavity-mediated gates on charge qubits.

Quantum-dot hybrid qubits exploit an extended charge-noise sweet spot that suppresses dephasing and has enabled the experimental achievement of high-fidelity single-qubit gates. However, current proposals for two-qubit gates require tuning the qubits away from their sweet spots. Here, we propose a two-hybrid-qubit coupling scheme, based on exchange interactions, that allows the qubits to remain at their sweet spots at all times. The interaction is controlled via the interqubit tunnel coupling. By simulating such gates in the presence of realistic quasistatic and

1/f

charge noise, we show that our scheme should enable controlled-

99.9%

gates of length $\ensuremath{\sim}5\phantom{\rule{0.16em}{0ex}}\mathrm{ns}$, and zero-controlled-not gates of length $\ensuremath{\sim}7\phantom{\rule{0.16em}{0ex}}\mathrm{ns}$, both with fidelities

>99.9%

.

A fundamental challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to take advantage of physical resources in different regimes, and to access optimal working points, sweet spots, where dephasing is minimized. Here, we explore an important resource for singlet-triplet qubits: a transverse sweet spot (TSS) that enables transitions between qubit states, a strong dipolar coupling, and leading-order protection from electrical fluctuations. Of particular interest is the possibility of transitioning between the TSS and symmetric operating points while remaining continuously protected. This arrangement is ideal for coupling qubits to a microwave cavity, because it combines tunability of the coupling with noise insensitivity. We perform simulations with [Formula: see text]-type electrical noise, demonstrating that two-qubit gates mediated by a resonator can achieve fidelities >99% under realistic conditions.