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arXiv:1905.06094 · Nature Communications

Enhancing the dipolar coupling of a S-T0 qubit with a transverse sweet spot

J. C. Abadillo-Uriel, M. A. Eriksson, S. N. Coppersmith, Mark G. Friesen

Published Dec 10, 2019• 19 citations
arXivHTMLPDF

Abstract

A fundamental challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to take advantage of physical resources in different regimes, and to access optimal working points, sweet spots, where dephasing is minimized. Here, we explore an important resource for singlet-triplet qubits: a transverse sweet spot (TSS) that enables transitions between qubit states, a strong dipolar coupling, and leading-order protection from electrical fluctuations. Of particular interest is the possibility of transitioning between the TSS and symmetric operating points while remaining continuously protected. This arrangement is ideal for coupling qubits to a microwave cavity, because it combines tunability of the coupling with noise insensitivity. We perform simulations with [Formula: see text]-type electrical noise, demonstrating that two-qubit gates mediated by a resonator can achieve fidelities >99% under realistic conditions.

DOI
10.1038/s41467-019-13548-w

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A fundamental challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to take advantage of physical resources in different regimes, and to access optimal working points, sweet spots, where dephasing is minimized. Here, we explore an important resource for singlet-triplet qubits: a transverse sweet spot (TSS) that enables transitions between qubit states, a strong dipolar coupling, and leading-order protection from electrical fluctuations. Of particular interest is the possibility of transitioning between the TSS and symmetric operating points while remaining continuously protected. This arrangement is ideal for coupling qubits to a microwave cavity, because it combines tunability of the coupling with noise insensitivity. We perform simulations with [Formula: see text]-type electrical noise, demonstrating that two-qubit gates mediated by a resonator can achieve fidelities >99% under realistic conditions.
Abstract A fundamental challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to take advantage of physical resources in different regimes, and to access optimal working points, sweet spots, where dephasing is minimized. Here, we explore an important resource for singlet-triplet qubits: a transverse sweet spot (TSS) that enables transitions between qubit states, a strong dipolar coupling, and leading-order protection from electrical fluctuations. Of particular interest is the possibility of transitioning between the TSS and symmetric operating points while remaining continuously protected. This arrangement is ideal for coupling qubits to a microwave cavity, because it combines tunability of the coupling with noise insensitivity. We perform simulations with 1/f1/f1/f1∕f-type electrical noise, demonstrating that two-qubit gates mediated by a resonator can achieve fidelities >99% under realistic conditions.
The key to realizing fault-tolerant quantum computation for semiconductor quantum-dot singlet-triplet (ST) qubits is to operate both the single- and two-qubit gates with high fidelity. The feasible way includes operating the qubit near the transverse sweet spot (TSS) to reduce the leading order of the noise, as well as adopting the merit of the global property of the geometric phase. Here, we propose the implementation of the universal geometric gates for the ST qubits in the double quantum dot (DQD). The single-qubit non-cyclic geometric gate which is using the non-cyclic evolution path of the state to obtain the geometric phase can be achieved via introducing the AC-driven detuning operating near the TSS. We perform numerical simulation under the realistic 1/f1/f1/f noise environment in DQD. We find that the non-cyclic geometric gate can surpass its dynamical counterpart with a relatively high fidelity of 99.81\%. Meanwhile, we have used the dipole coupling between the DQDs and the cavity resonator which is maximized at the TSS to construct the geometric (holonomic) entangling geometric gate. We have shown that the fidelity for this two-qubit gate can be as high as 99.63\%. Our results suggests that taking advantage of the non-cyclic geometric gates together with using the TSS can be effective to obtain high-fidelity ST qubits.
Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operating points seldom coincide. Here we theoretically investigate protocols, based on transverse or longitudinal sideband driving, for implementing two-qubit gates between quantum-dot hybrid qubits, mediated by a microwave cavity. The rich physics in these qubits gives rise to two types of sweet spots, which can occur at operating points with strong charge dipole moments. Such strong interactions provide new opportunities for off-resonant gating, thereby removing one of the main obstacles for long-distance two-qubit gates. We find that the transverse driving scheme yields faster gates, while longitudinal driving yields gates that are more resilient to photon decay. Our results suggest that the numerous tuning knobs of quantum-dot hybrid qubits make them good candidates for strong coupling. In particular, we show that off-resonant red-sideband-mediated two-qubit gates can exhibit fidelities greater than 9595%95 for realistic operating parameters, and we describe improvements that could potentially yield gate fidelities greater than 9999%99.
Two-level systems (TLSs) are the basic units of quantum computers but face a trade-off between operation speed and coherence due to shared coupling paths. Here, we investigate a TLS given by a singlet-triplet (ST+) transition. We identify a magnetic-field configuration that maximizes dipole coupling while minimizing total dephasing, forming a compromise-free sweet spot that mitigates this fundamental trade-off. The TLS is implemented in a crystal-phase-defined double-quantum dot in an InAs nanowire. Using a superconducting resonator, we measure the spin-orbit interaction (SOI) gap, the spin-photon coupling strength, and the total TLS dephasing rate as a function of the in-plane magnetic-field orientation. Our theoretical description postulates phonons as the dominant noise source. The compromise-free sweet spot originates from the SOI, suggesting that it is not restricted to this material platform but might find applications in any material with SOI. These findings pave the way for enhanced nanomaterial engineering for next-generation qubit technologies. Qubits face a trade-off between drive strength and coherence due to shared coupling paths. Here, the authors show that, using spin-orbit interactions, a sweet spot emerges that optimizes both control speed and dephasing, mitigating this fundamental limitation.
Qubits require a compromise between operation speed and coherence. Here, we demonstrate a compromise-free singlet-triplet (ST) qubit, where the qubit couples maximally to the driving field while simultaneously coupling minimally to the dominant noise sources. The qubit is implemented in a crystal-phase defined double-quantum dot in an InAs nanowire. Using a superconducting resonator, we measure the spin-orbit interaction (SOI) gap, the spin-photon coupling strength and the qubit decoherence rate as a function of the in-plane magnetic-field orientation. We demonstrate a spin qubit sweet spot maximizing the dipolar coupling and simultaneously minimizing the decoherence. Our theoretical description postulates phonons as the most likely dominant noise source. The compromise-free sweet spot originates from the SOI suggesting that it is not restricted to this material platform, but might find applications in any material with SOI. These findings pave the way for enhanced engineering of these nanomaterials for next-generation qubit technologies.
Singlet-triplet qubits in lateral quantum dots in semiconductor heterostructures exhibit high-fidelity single-qubit gates via exchange interactions and magnetic field gradients. High-fidelity two-qubit entangling gates are challenging to generate since weak interqubit interactions result in slow gates that accumulate error in the presence of noise. However, the interqubit electrostatic interaction also produces a shift in the local double well detunings, effectively changing the dependence of exchange on the gate voltages. We consider an operating point where the effective exchange is first-order insensitive to charge fluctuations while maintaining nonzero interactions. This ``sweet spot'' exists only in the presence of interactions. We show that working at the interacting sweet spot can directly produce maximally entangling gates, and we simulate the gate evolution under realistic 1/f1/f1/f noise. We report theoretical two-qubit gate fidelities above 99% in GaAs and Si systems.