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arXiv:1910.03427 · Physical Review A

High-fidelity entangling gates for quantum-dot hybrid qubits based on exchange interactions

Yuan‐Chi Yang, S. N. Coppersmith, Mark G. Friesen

Published Jan 23, 2020• 19 citations
arXivHTMLPDF

Abstract

Quantum-dot hybrid qubits exploit an extended charge-noise sweet spot that suppresses dephasing and has enabled the experimental achievement of high-fidelity single-qubit gates. However, current proposals for two-qubit gates require tuning the qubits away from their sweet spots. Here, we propose a two-hybrid-qubit coupling scheme, based on exchange interactions, that allows the qubits to remain at their sweet spots at all times. The interaction is controlled via the interqubit tunnel coupling. By simulating such gates in the presence of realistic quasistatic and $1/f$ charge noise, we show that our scheme should enable controlled-$Z$ gates of length $\ensuremath{\sim}5\phantom{\rule{0.16em}{0ex}}\mathrm{ns}$, and zero-controlled-not gates of length $\ensuremath{\sim}7\phantom{\rule{0.16em}{0ex}}\mathrm{ns}$, both with fidelities $>99.9%$.

DOI
10.1103/physreva.101.012338

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Quantum-dot hybrid qubits exploit an extended charge-noise sweet spot that suppresses dephasing and has enabled the experimental achievement of high-fidelity single-qubit gates. However, current proposals for two-qubit gates require tuning the qubits away from their sweet spots. Here, we propose a two-hybrid-qubit coupling scheme, based on exchange interactions, that allows the qubits to remain at their sweet spots at all times. The interaction is controlled via the interqubit tunnel coupling. By simulating such gates in the presence of realistic quasistatic and 1/f1/f1/f charge noise, we show that our scheme should enable controlled-ZZZ gates of length \ensuremath∼5ns\ensuremath{\sim}5\phantom{\rule{0.16em}{0ex}}\mathrm{ns}\ensuremath∼5ns, and zero-controlled-not gates of length \ensuremath∼7ns\ensuremath{\sim}7\phantom{\rule{0.16em}{0ex}}\mathrm{ns}\ensuremath∼7ns, both with fidelities >99.9>99.9%>99.9.
Abstract The ability to tune qubits to flat points in their energy dispersions (“sweet spots”) is an important tool for mitigating the effects of charge noise and dephasing in solid-state devices. However, the number of derivatives that must be simultaneously set to zero grows exponentially with the number of coupled qubits, making the task untenable for as few as two qubits. This is a particular problem for adiabatic gates, due to their slower speeds. Here, we propose an adiabatic two-qubit gate for quantum dot hybrid qubits, based on the tunable, electrostatic coupling between distinct charge configurations. We confirm the absence of a conventional sweet spot, but show that controlled-Z (CZ) gates can nonetheless be optimized to have fidelities of ~99% for a typical level of quasistatic charge noise (σε ≃ 1 μeV). We then develop the concept of a dynamical sweet spot (DSS), for which the time-averaged energy derivatives are set to zero, and identify a simple pulse sequence that achieves an approximate DSS for a CZ gate, with a 5× improvement in the fidelity. We observe that the results depend on the number of tunable parameters in the pulse sequence, and speculate that a more elaborate sequence could potentially attain a true DSS.
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Singlet-triplet qubits in lateral quantum dots in semiconductor heterostructures exhibit high-fidelity single-qubit gates via exchange interactions and magnetic field gradients. High-fidelity two-qubit entangling gates are challenging to generate since weak interqubit interactions result in slow gates that accumulate error in the presence of noise. However, the interqubit electrostatic interaction also produces a shift in the local double well detunings, effectively changing the dependence of exchange on the gate voltages. We consider an operating point where the effective exchange is first-order insensitive to charge fluctuations while maintaining nonzero interactions. This ``sweet spot'' exists only in the presence of interactions. We show that working at the interacting sweet spot can directly produce maximally entangling gates, and we simulate the gate evolution under realistic 1/f1/f1/f noise. We report theoretical two-qubit gate fidelities above 99% in GaAs and Si systems.
High-Fidelity Single-Qubit Gates Via Strongly Driving of a Double Quantum Dot Hybrid Qubit with 1/f1/f1/f Charge Noise
Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve XπX_{\pi}Xπ​ gates with fidelities higher than 99.9%99.9\%99.9%.
The search for a sweet spot, the locus in qubit parameters where quantum control is first-order insensitive to noises, is key to achieve high-fidelity quantum gates. Efforts to search for such a sweet spot in conventional double-quantum-dot singlet-triplet qubits where each dot hosts one electron (``two-electron singlet-triplet qubit''), especially for two-qubit operations, have been unsuccessful. Here we consider singlet-triplet qubits allowing each dot to host more than one electron, with a total of four electrons in the double quantum dots (``four-electron singlet-triplet qubit''). We theoretically demonstrate, using configuration interaction calculations, that sweet spots appear in this coupled qubit system. We further demonstrate that, under realistic charge noise and hyperfine noise, a two-qubit operation at the proposed sweet spot could offer gate fidelities ($\ensuremath{\sim}99%$) that are higher than the conventional two-electron singlet-triplet qubit system ($\ensuremath{\sim}90%$). Our results should facilitate realization of high-fidelity two-qubit gates in singlet-triplet qubit systems.
Charge noise has been one of the main issues in realizing high fidelity two-qubit quantum gates in semiconductor based qubits. Here, we study the influence of quasistatic noise in quantum dot detuning on the controlled phase gate for spin qubits that defined on a double quantum dot. Analytical expressions for the noise averaged Hamiltonian, exchange interaction, as well as the gate fidelity are derived for weak noise covering experimental relevant regime. We also perform interleaved two-qubit randomized benchmarking analysis for the controlled phase gate and show that an exponential decay of the sequential fidelity is still valid for the weak noise.