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arXiv:2312.12892

Controlled phase gate in exchange coupled quantum dots affected by quasistatic charge noise

Yinan Fang

Published Dec 20, 2023• 0 citations
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Abstract

Charge noise has been one of the main issues in realizing high fidelity two-qubit quantum gates in semiconductor based qubits. Here, we study the influence of quasistatic noise in quantum dot detuning on the controlled phase gate for spin qubits that defined on a double quantum dot. Analytical expressions for the noise averaged Hamiltonian, exchange interaction, as well as the gate fidelity are derived for weak noise covering experimental relevant regime. We also perform interleaved two-qubit randomized benchmarking analysis for the controlled phase gate and show that an exponential decay of the sequential fidelity is still valid for the weak noise.

DOI
10.48550/arxiv.2312.12892

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Charge noise has been one of the main issues in realizing high fidelity two-qubit quantum gates in semiconductor based qubits. Here, we study the influence of quasistatic noise in quantum dot detuning on the controlled phase gate for spin qubits that defined on a double quantum dot. Analytical expressions for the noise averaged Hamiltonian, exchange interaction, as well as the gate fidelity are derived for weak noise covering experimental relevant regime. We also perform interleaved two-qubit randomized benchmarking analysis for the controlled phase gate and show that an exponential decay of the sequential fidelity is still valid for the weak noise.
Quantum-dot hybrid qubits exploit an extended charge-noise sweet spot that suppresses dephasing and has enabled the experimental achievement of high-fidelity single-qubit gates. However, current proposals for two-qubit gates require tuning the qubits away from their sweet spots. Here, we propose a two-hybrid-qubit coupling scheme, based on exchange interactions, that allows the qubits to remain at their sweet spots at all times. The interaction is controlled via the interqubit tunnel coupling. By simulating such gates in the presence of realistic quasistatic and 1/f1/f1/f charge noise, we show that our scheme should enable controlled-ZZZ gates of length $\ensuremath{\sim}5\phantom{\rule{0.16em}{0ex}}\mathrm{ns}$, and zero-controlled-not gates of length $\ensuremath{\sim}7\phantom{\rule{0.16em}{0ex}}\mathrm{ns}$, both with fidelities >99.9>99.9%>99.9.
Charge noise remains the primary obstacle to the development of quantum information technologies with semiconductor spin qubits. We use an exact analytical calculation to determine the effects of quasistatic charge noise on a ring of three equally spaced exchange-coupled quantum dots. We calculate the disorder-averaged return probability from a specific initial state and use it to determine the coherence time T2∗{T}_{2}^{*}T2∗​ and show that it depends on only the disorder strength and not the mean interaction strength. We also use a perturbative approach to investigate other arrangements of three or four qubits, finding that the return probability contains multiple oscillation frequencies. These oscillations decay in a Gaussian manner, determined by differences in energy levels of the Hamiltonian. We give quantitative values for gate times resulting in several target fidelities. We find that the decoherence time decreases with an increasing number of qubits. Our work provides useful analytical insight into the charge noise dynamics of coupled spin qubits.
Abstract Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10 9 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking, we measure single-qubit gate fidelities of ~ 99%, and through self-consistent quantum measurement, state, and process tomography, we measure an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.
Exchange-based two-qubit gates in semiconductor spin qubits are sensitive to low-frequency detuning noise and control errors. Here, we extend concatenated continuous driving (CCD), implemented by phase modulation of a global microwave drive, to exchange-based SWAP and SWAP\sqrt{\mathrm{SWAP}}SWAP​ operations between double-dressed spin qubits and investigate its effectiveness for protecting two-qubit gates. We find that CCD retains strong protection against quasistatic common-mode detuning errors while substantially improving robustness against Rabi-frequency errors and qubit-to-qubit Rabi-frequency mismatch compared with conventional continuous dressing. By contrast, the gate fidelity is impacted by differential detuning errors. By modeling partially correlated quasistatic detuning noise, we further show that the noise-averaged gate fidelity depends strongly on the spatial correlation of the qubit-frequency fluctuations, with positive correlations enhancing CCD protection by suppressing the differential-noise component. These results identify the symmetry and spatial correlation of qubit-frequency noise as key factors governing continuous-drive protection in coupled spin-qubit systems.
The spin of an electron confined in semiconductor quantum dots is currently a promising candidate for quantum bit (qubit) implementations. Taking advantage of the existing CMOS integration technologies, such devices can offer a platform for large scale quantum computation. However, a quantum mechanical framework bridging a device's physical design and operational parameters to the qubit's energy space is lacking. Furthermore, the spin to charge coupling introduced by intrinsic or induced spin-orbit interaction (SOI) exposes the qubits to charge noise compromising their coherence properties and inducing quantum gate errors. We present here a comodeling framework for double quantum dot (DQD) devices and their charge noise environments. We use a combination of an electrostatic potential solver, full configuration interaction quantum mechanical methods, and two-level-fluctuator models to study the quantum gate performance in realistic device designs and operation conditions. We utilize the developed models together alongside the single electron solutions of the quantum dots to simulate one- and two-qubit gates in the presence of charge noise. We find an inverse correlation between quantum gate errors and quantum dot confinement frequencies. We calculate X-gate fidelities >97>97%>97 in the simulated Si-MOS devices at a typical TLF density of ${10}^{11}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}2}$. We also find that exchange driven two-qubit SWAP gates show higher sensitivity to charge noise with fidelities down to 9191%91 in the presence of the same density of TLFs. We further investigate the one- and two-qubit gate fidelities at different TLF densities. We find that given the small size of the quantum dots, sensitivity of a quantum gate to the distance between the noise sources and the quantum dot creates a strong variability in the quantum gate fidelities, which can compromise the device yields in scaled qubit technologies.
A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the gate fidelities among qubit implementations due to pulse timing errors by using a realistic set of values for the error parameters of control amplitudes.