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arXiv:1705.01468 · Physical Review A

Achieving high-fidelity single-qubit gates in a strongly driven silicon-quantum-dot hybrid qubit

Yuan‐Chi Yang, S. N. Coppersmith, Mark G. Friesen

Published Jun 13, 2017• 30 citations
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Abstract

Performing qubit gate operations as quickly as possible can be important to minimize the effects of decoherence. For resonant gates, this requires applying a strong ac drive. However, strong driving can present control challenges by causing leakage to levels that lie outside the qubit subspace. Strong driving can also present theoretical challenges because preferred tools such as the rotating wave approximation can break down, resulting in complex dynamics that are difficult to control. Here we analyze resonant $X$ rotations of a silicon-quantum-double-dot hybrid qubit within a dressed-state formalism, obtaining results beyond the rotating wave approximation. We obtain analytic formulas for the optimum driving frequency and the Rabi frequency, which are both affected by strong driving. While the qubit states exhibit fast oscillations due to counter-rotating terms and leakage, we show that they can be suppressed to the point that gate fidelities above $99.99%$ are possible, in the absence of decoherence. Hence decoherence mechanisms, rather than strong-driving effects, should represent the limiting factor for resonant-gate fidelities in quantum dot hybrid qubits.

DOI
10.1103/physreva.95.062321

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Performing qubit gate operations as quickly as possible can be important to minimize the effects of decoherence. For resonant gates, this requires applying a strong ac drive. However, strong driving can present control challenges by causing leakage to levels that lie outside the qubit subspace. Strong driving can also present theoretical challenges because preferred tools such as the rotating wave approximation can break down, resulting in complex dynamics that are difficult to control. Here we analyze resonant XXX rotations of a silicon-quantum-double-dot hybrid qubit within a dressed-state formalism, obtaining results beyond the rotating wave approximation. We obtain analytic formulas for the optimum driving frequency and the Rabi frequency, which are both affected by strong driving. While the qubit states exhibit fast oscillations due to counter-rotating terms and leakage, we show that they can be suppressed to the point that gate fidelities above 99.9999.99%99.99 are possible, in the absence of decoherence. Hence decoherence mechanisms, rather than strong-driving effects, should represent the limiting factor for resonant-gate fidelities in quantum dot hybrid qubits.
Semiconductor double quantum-dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve ${X}_{\ensuremath{\pi}}$ gates with fidelities higher than 99.999.9%99.9.
High-Fidelity Single-Qubit Gates Via Strongly Driving of a Double Quantum Dot Hybrid Qubit with 1/f1/f1/f Charge Noise
Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve XπX_{\pi}Xπ​ gates with fidelities higher than 99.9%99.9\%99.9%.
Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error correction have not yet been achieved. We show theoretically that the threshold fidelity can be achieved with ac gate operation of the quantum dot hybrid qubit. Formed by three electrons in a double dot, this qubit is electrically controlled, does not require magnetic fields, and runs at gigahertz (GHz) gate speeds. We analyze the decoherence caused by 1/f1/f1/f charge noise in this qubit, find parameters that minimize the charge noise dependence in the qubit frequency, and determine the optimal working points for ac gate operations that drive the detuning and tunnel coupling.
In many quantum platforms, single-qubit gates are applied using a linear drive resonant with the qubit transition frequency, which is often theoretically described within the rotating-wave approximation (RWA). However, for fast gates on low-frequency qubits, the RWA may not hold and we need to consider the contribution from counterrotating terms to the qubit dynamics. The inclusion of counterrotating terms into the theoretical description gives rise to two challenges. First, it becomes challenging to analytically calculate the time evolution as the Hamiltonian is no longer self-commuting. Moreover, the time evolution now depends on the carrier phase such that, in general, every operation in a sequence of gates is different. In this work, we derive and verify a correction to the drive pulses that minimizes the effect of these counterrotating terms in a two-level system. We then derive a second correction term that arises from noncomputational levels for a strongly anharmonic system. We experimentally implement these correction terms on a fluxonium superconducting qubit, which is an example of a strongly anharmonic, low-frequency qubit for which the RWA may not hold, and demonstrate how fast, high-fidelity single-qubit gates can be achieved without the need for additional hardware and calibration complexities.
Single-qubit quantum gates are implemented as the time-controlled unitary evolution of a two-level system under harmonic driving. The rotating-wave approximation (RWA) provides closed-form gate parameters for weak coupling. Larger amplitudes, desirable to speed up the dynamics, make the RWA-designed gates inaccurate because of the neglected counter-rotating term, which also shifts the resonance (Bloch-Siegert shift). Here we study theoretically the infidelity of gates beyond the RWA, using the effective Magnus-Taylor Hamiltonian through second order in the inverse of the driving frequency. By detuning the driving frequency by an amplitude-dependent shift of Bloch-Siegert type and rescaling the operation time, the RWA gate conditions are recovered with corrected parameters. Numerical solutions of the Schrodinger equation show that these corrections lower the gate infidelity by several orders of magnitude, extending the range of usable amplitudes
In semiconductor single-spin qubits, high-fidelity quantum gates have been demonstrated; however, achieving consistent performance remains challenging due to variations in driven qubit coherence, which is less explored than free-evolution coherence such as T2∗T_2^*T2∗​. Here, we report single-qubit gate fidelities above 99.999%, achieved by dramatically extending the driven-spin coherence time and suppressing off-resonant driving effects that are detrimental to accurate fidelity benchmarking. We demonstrate that removing proximal reservoirs significantly enhances the spin-locking coherence time (T1ρT_{1ρ}T1ρ​), a critical metric for qubits under microwave driving. Furthermore, we reveal that in typical spin qubit setups using parity readout and rectangular pulses, off-resonant excitation of neighboring qubits causes substantial benchmarking artifacts. By optimizing device conditions to mitigate microwave-induced degradation and implementing spectrally tailored pulse shaping, we achieve a π/2π/2π/2 gate fidelity of 99.99920(2)%, with remaining errors primarily limited by incoherent noise. These results showcase the mechanisms that bound fidelity benchmarking in state-of-the-art silicon spin qubits and provide practical guidelines for achieving and verifying high fidelities in these systems.