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Bulletin of the American Physical Society

Dielectric Loss Studies of New Materials for Quantum Information Circuits

David Wisbey, Fabio Teixeira Ferreira da Silva, Jeffrey S. Kline, Michael R. Vissers, S. Karki, Anthony N. Caruso, Jiansong Gao, David P. Pappas

Published Mar 17, 2010• 0 citations
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We present a flip-chip-based sensing scheme to measure effective microwave losses associated with target materials for quantum technologies, without requiring any device fabrication on the material under test. Using this approach, we quantify the microwave losses of a strain-engineered Ge/SiGe quantum well heterostructure and investigate losses arising from its Ge substrate and intermediate layers. The quality factors of the fabricated microwave resonators agree with the losses of dielectric materials independently extracted from flip-chip sensing measurements. We further study the superconductor platinum silicon germanide (PtSiGe) prepared by thermal reaction with a deposited Pt film, finding high microwave losses that limit the suitability of the films studied here as the sole superconductor for high-quality resonator applications. By coating Pt with Nb prior to the reaction, we observe a substantial reduction in microwave loss and a nearly three-fold enhancement of the transport critical temperature. The temperature dependence of the microwave loss is consistent with gap inhomogeneity in both superconducting films. These results identify constraints on material choices, provide design guidance for microwave circuits on planar Ge heterostructures, and demonstrate a fast-turnaround testing method for new materials for superconducting quantum circuits.
Superconducting quantum circuits are a leading candidate technology for large-scale quantum computing and simulation. Future scaling and improvements in device performance hinge upon a more detailed understanding of the sources of dielectric loss in these systems, yet standard techniques cannot separate the contributions from distinct dielectric regions to the aggregate device performance. This study presents a method for assessing the separate loss contributions from each material interface and bulk dielectric within such a circuit, enabling targeted improvements in performance by both informing device design and providing feedback to assess microfabrication techniques.