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Superconducting nanowire single photon detectors based on amorphous superconductors (Conference Presentation)

Boris A. Korzh, Misael Caloz, Jelmer J. Renema, Richard John Warburton, Christian Schönenberger, Hugo Zbinden, Félix Bussières

Published Jun 9, 2017• 0 citations
Publisher

Abstract

Superconducting nanowire single photon detectors (SNSPD) made from amorphous superconductors have showed great promise for achieving high fabrication yields, due to the highly uniform nature of the films. We present progress on the development of SNSPD based on amorphous MoSi with a critical temperature of around 5 K, which is ideal for detector operation at temperatures of 1 – 2.5 K, accessible with widely available cryogenic systems. First generation devices have achieved a saturated internal efficiency from visible to near-infrared wavelengths, which is the first requirement for high overall system efficiency. The broadband response has allowed us to make a robust study the energy-current relation in these devices, which defines the current required for a saturated internal detection efficiency for a given incident photon energy. Contrary to previous studies with other material systems, we find a nonlinear energy-current relation, which is an important insight into the detection mechanism in SNSPDs. The latest generation devices have been embedded into an micro-cavity structure in order to increase the system detection efficiency, which has increased to over 65% at 1550 nm. The efficiency is believed to be limited by fabrication imperfections and we present ongoing progress towards improving this characteristic as well as the yield of the devices. Efforts are also being made towards increasing the maximum operating temperature of the devices.

DOI
10.1117/12.2265488

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Superconducting nanowire single photon detectors (SNSPD) made from amorphous superconductors have showed great promise for achieving high fabrication yields, due to the highly uniform nature of the films. We present progress on the development of SNSPD based on amorphous MoSi with a critical temperature of around 5 K, which is ideal for detector operation at temperatures of 1 – 2.5 K, accessible with widely available cryogenic systems. First generation devices have achieved a saturated internal efficiency from visible to near-infrared wavelengths, which is the first requirement for high overall system efficiency. The broadband response has allowed us to make a robust study the energy-current relation in these devices, which defines the current required for a saturated internal detection efficiency for a given incident photon energy. Contrary to previous studies with other material systems, we find a nonlinear energy-current relation, which is an important insight into the detection mechanism in SNSPDs. The latest generation devices have been embedded into an micro-cavity structure in order to increase the system detection efficiency, which has increased to over 65% at 1550 nm. The efficiency is believed to be limited by fabrication imperfections and we present ongoing progress towards improving this characteristic as well as the yield of the devices. Efforts are also being made towards increasing the maximum operating temperature of the devices.
Recent progress in the development of superconducting nanowire single-photon detectors (SNSPDs) made of amorphous materials has delivered excellent performances and has had a great impact on a range of research fields. Despite showing the highest system detection efficiency (SDE) ever reported with SNSPDs, amorphous materials typically lead to lower critical currents, which have impacts on their jitter performance. Combining a very low jitter and a high SDE remains a challenge. Here, we report on highly efficient superconducting nanowire single-photon detectors based on amorphous MoSi, combining system jitters as low as 26 ps and a SDE of 80% at 1550 nm. We also report detailed observations on the jitter behaviour, which hints at intrinsic limitations and leads to practical implications for SNSPD performance.
Recent progress in the development of superconducting nanowire single-photon detectors (SNSPDs) made of amorphous material has delivered excellent performances, and has had a great impact on a range of research fields. Despite showing the highest system detection efficiency (SDE) ever reported with SNSPDs, amorphous materials typically lead to lower critical currents, which impacts on their jitter performance. Combining a very low jitter and a high SDE remains a challenge. Here, we report on highly efficient superconducting nanowire single-photon detectors based on amorphous MoSi, combining system jitters as low as 26 ps and a SDE of 80% at 1550 nm. We also report detailed observations on the jitter behaviour, which hints at intrinsic limitations and leads to practical implications for SNSPD performance.
We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 cps. Operation in a closed-cycle cryocooler at 2.5 K is possible with system detection efficiencies exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. Jitter is observed to vary between 69 ps at 250 mK and 187 ps at 2.5 K using room temperature amplifiers.
Single photon detection advanced rapidly in the last decade. The superconducting nanowire single-photon detector (SNSPD) is an emerging technology, which offers low dark count rates, broadband sensitivity from visible to mid-infrared wavelengths and very high quantum efficiency. All these features are appealing for future emerging applications in remote gas sensing, quantum key distribution and quantum information processing. By enclosing the detector in an optical cavity, tuned to the operating wavelength, the total system detection of the SNSPD is improved. Based on the cavity design, the detector absorption is boosted at the desired experimental wavelength. Devices have been fabricated and tested, in this thesis, with enhanced detection efficiency at near-infrared, infrared and mid-infrared wavelengths. NbTiN detectors fabricated on Ta2O5 / SiO2 distributed Bragg reflectors (DBR) for front-side coupling exhibit a system detection efficiency of ≈ 90% at λ = 940 nm for the best device measured. SNSPDs were also fabricated in NbTiN on metallic mirrors for back-side coupling for 1550 and 2333 nm experimental wavelengths. The first design exhibited a system detection efficiency of ≈ 84.5%, at λ = 1550 nm for the best device measured. The second exhibited low system detection efficiency since the device suffered from unexpectedly high dark count rate mainly due to blackbody radiation at 2.2 K. However, it was possible to measure the timing jitter of this device at 350 mK indicating a FWHM of 84 ps. Another technique to improve the total system detection efficiency of the SNSPD, is by fabricating a hairpin-shaped nanowire atop a single mode waveguide. In this design, photons travel through the waveguide and via evanescent coupling are absorbed in the nanowire. These SNSPD devices have been designed to thread along single mode Si ridge waveguides using a hairpin-shaped nanowire structure, which offers enhanced coupling and absorption efficiency via evanescent coupling. These ultra-thin superconducting MoSi detectors are precisely patterned on top of a single mode Si waveguide (600 nm) with alignment error less than 40 nm. Low temperature electrical and nano-optical characterization was carried out using a two-stage pulse tube (PT) coldhead, using an additional 4He / 3He sorption pump, low vibration characterization of SNSPD devices at 350 mK was carried out. Characterised devices exhibit low dark count rate <5 counts per second and timing jitter of ≈ 83 ps full width half maximum (FWHM) at wavelength (λ) = 1550 nm and at critical current ≈ 30 µA.
Amorphous materials are attractive candidates for fabricating the superconducting nanowire single-photon detectors (SNSPDs) due to their superior tolerance and scalability over crystalline niobium nitride. However, the reduced superconducting transition temperature degenerates both operating temperature and saturation efficiency. Herein, the SNSPD (6.5 nm thickness and 50 nm width) based on the amorphous Mo 0.8 Si 0.2 film with a high optical absorption coefficient demonstrates close-to-unity intrinsic detection efficiency for 1550 nm photons from 75 mK to 2.2 K. Further, a high-performance array SNSPD with optimized 90 nm-width wires is also demonstrated. As-fabricated uniform 4-pixel SNSPD exhibits a saturation plateau for the photon counts at 2.2 K, which overcomes the limitation of operation at low temperature ( < 1 K ) for traditional amorphous SNSPDs. Coupled with superior intrinsic quantum efficiency, highly efficient photon counts, and low dark count ratio, this detector paves a way for achieving high efficiency and superior yield for large array systems.
In this Letter, we characterized superconducting nanowire single-photon detectors (SNSPDs) based on amorphous tungsten germanide (W0.8Ge0.2) superconducting films, which exhibit superconducting properties comparable to those of amorphous WSi. The nanowire width ranges from 60 to 90 nm, with a fixed filling factor of 30%. All fabricated devices exhibit saturated intrinsic detection efficiency for infrared photons with wavelengths up to 2 μm, indicating that WGe is a promising candidate for SNSPDs designed for mid- and far-infrared photon detection. The timing jitter of these detectors, measured with a room-temperature amplifier, ranges from 127 to 234.5 ps. Further improvements can be achieved through device geometry optimization or the implementation of cryogenic amplifiers.