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arXiv:1402.4526 · Applied Physics Letters

Superconducting nanowire single photon detectors fabricated from an amorphous Mo0.75Ge0.25 thin film

Varun Boehm Verma, Adriana E. Lita, Michael R. Vissers, Francesco Marsili, David P. Pappas, Richard P. Mirin, S. W. Nam

Published Jul 14, 2014• 77 citations
arXivHTMLPDF

Abstract

We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 cps. Operation in a closed-cycle cryocooler at 2.5 K is possible with system detection efficiencies exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. Jitter is observed to vary between 69 ps at 250 mK and 187 ps at 2.5 K using room temperature amplifiers.

DOI
10.1063/1.4890277

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We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo0.75Ge0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 cps. Operation in a closed-cycle cryocooler at 2.5 K is possible with system detection efficiencies exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. Jitter is observed to vary between 69 ps at 250 mK and 187 ps at 2.5 K using room temperature amplifiers.
Amorphous materials are attractive candidates for fabricating the superconducting nanowire single-photon detectors (SNSPDs) due to their superior tolerance and scalability over crystalline niobium nitride. However, the reduced superconducting transition temperature degenerates both operating temperature and saturation efficiency. Herein, the SNSPD (6.5 nm thickness and 50 nm width) based on the amorphous Mo 0.8 Si 0.2 film with a high optical absorption coefficient demonstrates close-to-unity intrinsic detection efficiency for 1550 nm photons from 75 mK to 2.2 K. Further, a high-performance array SNSPD with optimized 90 nm-width wires is also demonstrated. As-fabricated uniform 4-pixel SNSPD exhibits a saturation plateau for the photon counts at 2.2 K, which overcomes the limitation of operation at low temperature ( < 1 K ) for traditional amorphous SNSPDs. Coupled with superior intrinsic quantum efficiency, highly efficient photon counts, and low dark count ratio, this detector paves a way for achieving high efficiency and superior yield for large array systems.
We report on MoSi SNSPDs which achieved high system detection efficiency (87.1 ± 0.5% at 1542 nm) at 0.7 K and we demonstrate that these detectors can also be operated with saturated internal efficiency at a temperature of 2.3 K in a Gifford-McMahon cryocooler. We measured a minimum system jitter of 76 ps, maximum count rate approaching 10 MHz, and polarization dependence as low as 3.3 ± 0.1%. The performance of MoSi SNSPDs at 2.3 K is similar to the performance of WSi SNSPDs at < 1 K. The higher operating temperature of MoSi SNSPDs makes these devices promising for widespread use due to the simpler and less expensive cryogenics required for their operation.
We have developed a practical superconducting nanowire single photon detector (SNSPD) system with our superconducting thin films and devices fabrication, optical coupling packaging, and cryogenic technology. The SNSPD devices were fabricated from high-quality niobium nitride (NbN) ultra-thin films that were epitaxially grown on single-crystal MgO substrates, and optical cavity structure were applied for improvement of photo absorption efficiency. The SNSPD system was developed based on a compact Gifford-McMahon (GM) cryocooler, in which SNSPD can operate continuously at temperature of 2.9 K +/- 10 mK with low power consumption without any liquid cryogens. The system detection efficiencies at 1550 nm wavelength (at a 100 Hz dark count rate) were found to be 2.6% for device without optical cavity and 21% for device with optical cavity. The response speed of devices showed maximally 200 MHz with 5 × 5 mm square device, and timing jitter of 100 ps full width at a half maximum (FWHM) was observed.
In this Letter, we characterized superconducting nanowire single-photon detectors (SNSPDs) based on amorphous tungsten germanide (W0.8Ge0.2) superconducting films, which exhibit superconducting properties comparable to those of amorphous WSi. The nanowire width ranges from 60 to 90 nm, with a fixed filling factor of 30%. All fabricated devices exhibit saturated intrinsic detection efficiency for infrared photons with wavelengths up to 2 μm, indicating that WGe is a promising candidate for SNSPDs designed for mid- and far-infrared photon detection. The timing jitter of these detectors, measured with a room-temperature amplifier, ranges from 127 to 234.5 ps. Further improvements can be achieved through device geometry optimization or the implementation of cryogenic amplifiers.
Superconducting nanowire single photon detectors (SNSPD) made from amorphous superconductors have showed great promise for achieving high fabrication yields, due to the highly uniform nature of the films. We present progress on the development of SNSPD based on amorphous MoSi with a critical temperature of around 5 K, which is ideal for detector operation at temperatures of 1 – 2.5 K, accessible with widely available cryogenic systems. First generation devices have achieved a saturated internal efficiency from visible to near-infrared wavelengths, which is the first requirement for high overall system efficiency. The broadband response has allowed us to make a robust study the energy-current relation in these devices, which defines the current required for a saturated internal detection efficiency for a given incident photon energy. Contrary to previous studies with other material systems, we find a nonlinear energy-current relation, which is an important insight into the detection mechanism in SNSPDs. The latest generation devices have been embedded into an micro-cavity structure in order to increase the system detection efficiency, which has increased to over 65% at 1550 nm. The efficiency is believed to be limited by fabrication imperfections and we present ongoing progress towards improving this characteristic as well as the yield of the devices. Efforts are also being made towards increasing the maximum operating temperature of the devices.
We investigate the operation of WSi superconducting nanowire single-photon detectors (SNSPDs) at 2.5 K, a temperature which is ∼70% of the superconducting transition temperature (TC) of 3.4 K. We demonstrate saturation of the system detection efficiency at 78 ± 2% at a wavelength of 1310 nm, with a jitter of 191 ps. We find that the jitter at 2.5 K is limited by the noise of the readout and can be improved through the use of cryogenic amplifiers. Operation of SNSPDs with high efficiency at temperatures very close to TC appears to be a unique property of amorphous WSi.