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Bulletin of the American Physical Society

Control of Trapped Ions on a Chip Trap for Quantum Information

Katherine Collins, Kenneth Wright, Christopher J. Rickerd, Christopher R. Monroe

Published Oct 24, 2015• 0 citations
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Microfabricated ion trap chips are at the core of some of the most advanced quantum computers. How a large number of ions is arranged and controlled on an ion trap chip depends on the chosen trap architecture. One such architecture is the quantum spring array (QSA). In the QSA architecture, ion chains are arranged in a two-dimensional lattice and interact with ion chains in neighboring sites in the radial and axial directions of the respective chain. This interaction, or coupling, is mediated by the Coulomb force while keeping ions in separate trapping sites, and scales inversely with the third power of the separation. The capability to control the distance between ions in the lattice is thus essential. In previous works, the radial separation between ions was tuned by controlling the rf pseudo-potential, which revealed to be experimentally challenging to realize while maintaining low heating rates. In this work, we present an ion trap chip design that allows tuning of the radial distance between ions using only dc voltages. The radial transport is executed between different interaction zones, designated for quantum operations, through specifically designed transition zones. A prototype of this type of ion trap chip was microfabricated on fused silica substrate. Its functionality is characterized by demonstrating dc-controlled radial transport of a single ion through a transition zone and measuring stray fields and ion heating rates in the center of the trap. Moreover, the fabrication of a multi-metal layer version of such a trap is presented as a scaling path for the presented chip design.

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Abstract : State-of-the art micro-fabricated ion traps for quantum information research have grown to incorporate upwards of a hundred control electrodes. In the typical architecture, a surface-electrode ion trap is fabricated on a thin chip that sits atop an industry standard CPGA carrier. To supply DC potentials for each electrode, pads on the CPGA are wirebonded to pads on the trap chip, while on-chip surface capacitors suppress pickup from the RF trapping fields. For large numbers of electrodes, the physical area taken up by these wirebonds and filter capacitors present significant constraints for ion trap design and operation. We report here on the development and successful testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections and trench capacitors. In the BGA trap, through-substrate vias (TSVs) are used to bring electrical signals from the back side of the trap die to the top side. Gold-ball bump bonds connect the back side of the trap die to a separate interposer for signal routing from the CPGA carrier. Trench capacitors fabricated into the trap die eliminate the need for surface capacitors, reducing the trap die area by 30x.

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Quantum information processing with trapped ions

John Gaebler

Bulletin of the American Physical Society•Mar 19, 2013•0 citations
Microfabricated ion trap chips are at the core of some of the most advanced quantum computers. How a large number of ions is arranged and controlled on an ion trap chip depends on the chosen trap architecture. One such architecture is the quantum spring array (QSA). In the QSA architecture, ion chains are arranged in a two-dimensional lattice and interact with ion chains in neighboring sites in the radial and axial directions of the respective chain. This interaction, or coupling, is mediated by the Coulomb force while keeping ions in separate trapping sites, and scales inversely with the third power of the separation. The capability to control the distance between ions in the lattice is thus essential. In previous works, the radial separation between ions was tuned by controlling the rf pseudo-potential, which revealed to be experimentally challenging to realize while maintaining low heating rates. In this work, we present an ion trap chip design that allows tuning of the radial distance between ions using only dc voltages. The radial transport is executed between different interaction zones, designated for quantum operations, through specifically designed transition zones. A prototype of this type of ion trap chip was microfabricated on fused silica substrate. Its functionality is characterized by demonstrating dc-controlled radial transport of a single ion through a transition zone and measuring stray fields and ion heating rates in the center of the trap. Moreover, the fabrication of a multi-metal layer version of such a trap is presented as a scaling path for the presented chip design.
Abstract : State-of-the art micro-fabricated ion traps for quantum information research have grown to incorporate upwards of a hundred control electrodes. In the typical architecture, a surface-electrode ion trap is fabricated on a thin chip that sits atop an industry standard CPGA carrier. To supply DC potentials for each electrode, pads on the CPGA are wirebonded to pads on the trap chip, while on-chip surface capacitors suppress pickup from the RF trapping fields. For large numbers of electrodes, the physical area taken up by these wirebonds and filter capacitors present significant constraints for ion trap design and operation. We report here on the development and successful testing of a new architecture for microfabricated ion traps, built around ball-grid array (BGA) connections and trench capacitors. In the BGA trap, through-substrate vias (TSVs) are used to bring electrical signals from the back side of the trap die to the top side. Gold-ball bump bonds connect the back side of the trap die to a separate interposer for signal routing from the CPGA carrier. Trench capacitors fabricated into the trap die eliminate the need for surface capacitors, reducing the trap die area by 30x.