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Conference on Lasers and Electro-Optics

Polarization-dependent interference of coherent scattering from orthogonal dipole moments of a resonantly excited quantum dot

Disheng Chen, Gary R. Lander, Glenn S. Solomon, Edward B. Flagg

Published Jan 1, 2017• 2 citations
Publisher

Abstract

Interference between coherent scattering from the two fine structure split exciton states in a neutral InGaAs quantum dot causes an unconventional excitation line shape. Analysis allows the extraction of steady-state coherence between the exciton states.
DOI
10.1364/cleo_qels.2017.fw4h.5

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Resonant photoluminescence excitation (RPLE) spectra of a neutral InGaAs quantum dot show unconventional line shapes that depend on the detection polarization. We characterize this phenomenon by performing polarization-dependent RPLE measurements and simulating the measured spectra with a three-level quantum model. The spectra are explained by interference between fields coherently scattered from the two fine structure split exciton states, and the measurements enable extraction of the steady-state coherence between the two exciton states.
Resonant photoluminescence excitation (RPLE) spectra of a neutral InGaAs quantum dot show unconventional line shapes that depend on the detection polarization. We characterize this phenomenon by performing polarization-dependent RPLE measurements and simulating the measured spectra with a three-level quantum model. The spectra are explained by interference between fields coherently scattered from the two fine structure split exciton states, and the measurements enable extraction of the steady-state coherence between the two exciton states.
Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.
Exciton-biexciton coherent coupling effects are examined in semiconductor quantum dots. The exciton absorption spectrum is measured with the microphotoluminescence excitation technique in a single InGaAs quantum dot. The spectrum changes from a Lorenztian-type line shape to an unusual dip-shaped line shape with increasing excitation intensities in a higher exciton state where there is a large oscillator strength between the exciton and biexciton states. The intensity dependence of the dip energy width clearly indicates that coherent Rabi oscillation occurs between the exciton and biexciton states. The absorption properties with excitation light of different polarizations show that the dip-shaped spectra only appear when there is a large biexciton state population with linear polarization. A theoretical analysis undertaken with the density matrix method agrees well with experimental results. This agreement reveals that exciton-biexciton coherent interactions lead to unusual absorption spectra and contribute crucially to the optical properties of quantum dots. The exciton-biexciton coherent effects provide a scheme for controlling four distinguishable states, which can be applied to a demonstration of quantum gate operations.
Single-photon interference is observed on the ultranarrow long-term stable exciton resonance of an individual semiconductor quantum dot. This interference is related to the fine-structure splitting and allows direct conclusions about the coherence properties of the exciton. When selectively addressing a particular dot by quasiresonant phonon-assisted excitation, despite a rapid orientation relaxation on a 1-ps time scale, coherence is partly maintained. No significant further decoherence occurs when the ground state is reached until the exciton recombines radiatively (approximately 300 ps).