Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Bulletin of the American Physical Society

Photon Correlation Measurements on Vertically Coupled InAs/GaAs Quantum Dots

Thushan E. Wickramasinghe, Venkata R Thota, Mauricio Garrido, Eric Stinaff, A. S. Bracker, David Gammon

Published Mar 15, 2017• 0 citations
OpenAlex

Related papers

Voltage-Controlled Slow Light via Resonant Tunneling Induced Transparency in Vertically aligned Conical Double Quantum Dot Molecules

Nooralhuda S.Yaqoob, Sabah M. M. Ameen

The electronic states of InAs/GaAs quantum dot has investigated for vertically-aligned double conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage, wetting layer thickness and inter-dot spacer. Tunneling-induced transparency (TIT) in vertically coupled InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The inter-dot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in vertically coupled InAs/GaAs quantum dots controlled by electric fields.

•Jan 1, 2019•0 citations

Photon Correlation in GaAs Self-Assembled Quantum Dots

南不二雄, F. Minami

•Apr 1, 2008•0 citations

Fiber coupled high count-rate single-photon generated from InAs quantum dots

Yao Chen, Shulun Li, Xiangjun Shang +7 more

Abstract In this work, we achieve high count-rate single-photon output in single-mode (SM) optical fiber. Epitaxial and dilute InAs/GaAs quantum dots (QDs) are embedded in a GaAs/AlGaAs distributed Bragg reflector (DBR) with a micro-pillar cavity, so as to improve their light emission extraction in the vertical direction, thereby enhancing the optical SM fiber’s collection capability (numerical aperture: 0.13). By tuning the temperature precisely to make the quantum dot exciton emission resonant to the micro-pillar cavity mode (Q ~ 1800), we achieve a fiber-output single-photon count rate as high as 4.73 × 106 counts per second, with the second-order auto-correlation g 2(0) remaining at 0.08.

Journal of Semiconductors•Jul 1, 2021•6 citations

Photon Correlation in GaAs Self-assembled Quantum Dots

小口 信行, 木戸 義勇, 迫田 和彰 +11 more

Applied Physics Express•Apr 1, 2008•0 citations

Dephasing of intraband transitions in InAs/GaAs quantum dots

R. Ferreira

•Jan 1, 2008•0 citations

Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

Dou Xiu-Ming, Baoquan Sun, Chang Xiu-Ying +4 more

We report on the single photon emission from single InAs/GaAs self-assembled Stranski–Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g (2) (0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.

Chinese Physics Letters•Sep 1, 2008•2 citations
The electronic states of InAs/GaAs quantum dot has investigated for vertically-aligned double conical quantum dots molecule (CQDM). We calculated Eigen energies as a function of external voltage, wetting layer thickness and inter-dot spacer. Tunneling-induced transparency (TIT) in vertically coupled InAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency (EIT) in atomic systems, has studied. The inter-dot quantum coupling strength is tuned by static electric fields. For parameters appropriate to a 100 Gbits/s optical network, slow down factor (SDF) as 109 can be achieved. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on TIT in vertically coupled InAs/GaAs quantum dots controlled by electric fields.
Abstract In this work, we achieve high count-rate single-photon output in single-mode (SM) optical fiber. Epitaxial and dilute InAs/GaAs quantum dots (QDs) are embedded in a GaAs/AlGaAs distributed Bragg reflector (DBR) with a micro-pillar cavity, so as to improve their light emission extraction in the vertical direction, thereby enhancing the optical SM fiber’s collection capability (numerical aperture: 0.13). By tuning the temperature precisely to make the quantum dot exciton emission resonant to the micro-pillar cavity mode (Q ~ 1800), we achieve a fiber-output single-photon count rate as high as 4.73 × 106 counts per second, with the second-order auto-correlation g 2(0) remaining at 0.08.
We report on the single photon emission from single InAs/GaAs self-assembled Stranski–Krastanow quantum dots up to 80 K under pulsed and continuous wave excitations. At temperature 80 K, the second-order correlation function at zero time delay, g (2) (0), is measured to be 0.422 for pulsed excitation. At the same temperature under continuous wave excitation, the photon antibunching effect is observed. Thus, our experimental results demonstrate a promising potential application of self-assembled InAs/GaAs quantum dots in single photon emission at liquid nitrogen temperature.