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IEICE Technical Report; IEICE Tech. Rep.

10 kA/cm^2 Nb Processを用いたSFQバタフライ演算回路の要素回路の動作評価

史滋 宮岡, 泰浩 島村, 世樹 貝沼, 裕希 山梨, 信行 吉川

Published Oct 12, 2010• 0 citations
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10kA/cm^2 Nb Processを用いたSFQバタフライ演算回路の要素回路の動作評価(超伝導エレクトロニクス基盤技術及び一般)

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Current status and future prospect of the Nb-based fabrication process for single flux quantum circuits

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The Superconductivity Research Laboratory has successfully fabricated large quantities of single flux quantum (SFQ) large scale integrated circuits, including several thousands of Josephson junctions (JJs). Using a Jc = 2.5 kA cm−2 process in which the number of Nb layers was four and the minimum JJ size was 2 µm square. We developed a new advanced fabrication process that produced a Jc = 10 kA cm−2, nine Nb layers and a minimum JJ size of 1 µm square. The increase in the number of Nb layers was achieved by using a planarization technique. The target of our next generation process is a Jc = 40 kA cm−2 with a 0.5 µm square for the minimum junction size. This specification will be achieved by using advanced semiconductor technologies. This process will enable SFQ circuits to be produced with one million JJs on a chip and achieve a clock frequency greater than 100 GHz.

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Output Interface With Latching Driver for LTS-SFQ Circuits

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We propose an output interface with a latching driver for single-flux-quantum (SFQ) circuits operating at 4.2 K. An optimum critical current density J/sub c/ of the latching driver was discussed, and a multichip module (MCM) structure with SFQ circuits and latching drivers was proposed for 40-Gb/s operation. To optimize J/sub c/ of the latching driver, we calculated the punchthrough probability of Nb-Al-AlO/sub x/-Nb junctions and high-temperature superconductor (HTS) junctions. The Nb junction with a J/sub c/ of 45 kA/cm/sup 2/, which has a hysteresis of 44% for the latching operation, leads to a punchthrough probability lower than 10/sup -15/ for an ideal ac-bias of 40 GHz. On the other hand, ramp-edge-type interface-modified junctions based on YBa/sub 2/Cu/sub 3/O/sub 7-x/ have an optimum J/sub c/ of 60 kA/cm/sup 2/ that gives the smallest punchthrough probability lower than 10/sup -15/ for an ideal ac-bias of 40 GHz without any shunt capacitance. Because the optimum J/sub c/ of 45 kA/cm/sup 2/ for the latching driver is too large to fabricate large-scale integrated SFQ circuits with the Nb junction, the MCM structure consisting of SFQ circuits and latching drivers with the optimum J/sub c/ is important to prepare 40-Gb/s SFQ systems. The J/sub c/ of 60 kA/cm/sup 2/ is a practical value for the HTS junctions, and use of the low-temperature superconductor (LTS)-HTS MCM structure is also one way to realize the high-speed SFQ systems.

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泰浩 島村, 世樹 貝沼, 史滋 宮岡 +5 more

電子情報通信学会技術研究報告. SCE, 超伝導エレクトロニクス•Jul 15, 2010•0 citations
The Superconductivity Research Laboratory has successfully fabricated large quantities of single flux quantum (SFQ) large scale integrated circuits, including several thousands of Josephson junctions (JJs). Using a Jc = 2.5 kA cm−2 process in which the number of Nb layers was four and the minimum JJ size was 2 µm square. We developed a new advanced fabrication process that produced a Jc = 10 kA cm−2, nine Nb layers and a minimum JJ size of 1 µm square. The increase in the number of Nb layers was achieved by using a planarization technique. The target of our next generation process is a Jc = 40 kA cm−2 with a 0.5 µm square for the minimum junction size. This specification will be achieved by using advanced semiconductor technologies. This process will enable SFQ circuits to be produced with one million JJs on a chip and achieve a clock frequency greater than 100 GHz.
We propose an output interface with a latching driver for single-flux-quantum (SFQ) circuits operating at 4.2 K. An optimum critical current density J/sub c/ of the latching driver was discussed, and a multichip module (MCM) structure with SFQ circuits and latching drivers was proposed for 40-Gb/s operation. To optimize J/sub c/ of the latching driver, we calculated the punchthrough probability of Nb-Al-AlO/sub x/-Nb junctions and high-temperature superconductor (HTS) junctions. The Nb junction with a J/sub c/ of 45 kA/cm/sup 2/, which has a hysteresis of 44% for the latching operation, leads to a punchthrough probability lower than 10/sup -15/ for an ideal ac-bias of 40 GHz. On the other hand, ramp-edge-type interface-modified junctions based on YBa/sub 2/Cu/sub 3/O/sub 7-x/ have an optimum J/sub c/ of 60 kA/cm/sup 2/ that gives the smallest punchthrough probability lower than 10/sup -15/ for an ideal ac-bias of 40 GHz without any shunt capacitance. Because the optimum J/sub c/ of 45 kA/cm/sup 2/ for the latching driver is too large to fabricate large-scale integrated SFQ circuits with the Nb junction, the MCM structure consisting of SFQ circuits and latching drivers with the optimum J/sub c/ is important to prepare 40-Gb/s SFQ systems. The J/sub c/ of 60 kA/cm/sup 2/ is a practical value for the HTS junctions, and use of the low-temperature superconductor (LTS)-HTS MCM structure is also one way to realize the high-speed SFQ systems.