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Научно-технический вестник информационных технологий, механики и оптики

ФЕМТОСЕКУНДНОЕ ФОТОННОЕ ЭХО НА НЕОДНОРОДНЫХ ПО РАЗМЕРУ КВАНТОВЫХ ТОЧКАХ ОКСИДА ЦИНКА ПРИ КОМНАТНОЙ ТЕМПЕРАТУРЕ

Вашурин Никита Сергеевич, Попов Иван Иванович, Путилин Сергей Эдуардович, Сидорова Вера Тагировна, Степанов Сергей Александрович, Николай Иванович Сушенцов

Published Jan 1, 2013• 0 citations
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Abstract

The article deals with the discovery of femtosecond signals of self-diffraction and photon echo in a zinc oxide film of 100 nm thickness, consisting of different-sized quantum dots, at room temperature. Experimental results, proving the Autler-Townes effect demonstration on exciton transitions of quantum dots, are obtained.

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The article deals with the discovery of femtosecond signals of self-diffraction and photon echo in a zinc oxide film of 100 nm thickness, consisting of different-sized quantum dots, at room temperature. Experimental results, proving the Autler-Townes effect demonstration on exciton transitions of quantum dots, are obtained.

•Jan 1, 2013•0 citations

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This work reports on the experiments on the two-photon excitation of a primary photon echo femtosecond signal in a zinc oxide semiconductor film of nanoscale (100, 600, and 800 nm) thickness at the quantum transition (corresponding to 400 nm) at room temperature. The photon echo was observed on free excitons. The echo signal partially weakened due to the scattering on the optical phonons was recorded at a wavelength of 800–840 nm. The nano-optical effect of the reduction of the environment irreversible transverse relaxation time ( T 2) with the decrease of the film thickness was detected. The established fact is connected, firstly, with the structural characteristics of the films under study and, secondly, with the decrease in the intensity of the longitudinal interactions between the excited particles along with the reduction of the film thickness.

Ученые записки Казанского университета. Серия Физико-математические науки•Jan 1, 2013•0 citations

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We report the results of the first experiment on recording of photon echo and self-diffraction signals in a zinc oxide semiconductor film of nanoscale thickness, which are excited by two-photon absorption of femtosecond laser pulses with wavelengths of 800 to 840nm for the exciton transition at room temperature.

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Investigation of relaxation in quantum dot ensembles in thin semiconductor films by photon-echo technique

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Experimental results of observations of a femtosecond photon echo excited in an ensemble of quantum nanometer-sized objects in thin semiconductor (ZnO, SiB, SiP) films at room temperature are presented. The observed properties of the photon echo are discussed. Recorded relaxation times of exciton quantum transitions and beats at the photon echo decay as a function of the increasing interval between the exciting pulses reveal the role played by the defects of the thin film in the formation of its exciton structure of quantum transitions investigated using angular optical echo spectroscopy.

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Photon echo on excitons for the development of nanoelectronic devices based on a quantum-size structures in a thin zinc oxide films

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The relaxation decays of photon echo signals in thin zinc oxide films produced by magnetron sputtering have been studied. Echo signals are excited at a wavelength of 800 nm at transitions between quantum levels that arise when excitonic states are localized in quantum-sized structures in the two-photon absorption mode of laser pulses with a wavelength of 800 nm.

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Photon Echo on Excitons and Its Role in the Development of Nanoelectronic Devices Based on Quantum-Sized Structures in Thin Zinc Oxide Films

I. I. Popov, Roman V. Yusupov, A. V. Petrov +3 more

Abstract The relaxation decays of photon echo signals in thin zinc oxide films produced by magnetron sputtering were studied. Echo signals are excited at a wavelength of 800 nm by transitions between quantum levels that arise when excitonic states are localized in quantum-sized structures by two-photon absorption mode of laser pulses with a wavelength of 800 nm.

Bulletin of the Russian Academy of Sciences Physics•Feb 1, 2024•0 citations
This work reports on the experiments on the two-photon excitation of a primary photon echo femtosecond signal in a zinc oxide semiconductor film of nanoscale (100, 600, and 800 nm) thickness at the quantum transition (corresponding to 400 nm) at room temperature. The photon echo was observed on free excitons. The echo signal partially weakened due to the scattering on the optical phonons was recorded at a wavelength of 800–840 nm. The nano-optical effect of the reduction of the environment irreversible transverse relaxation time ( T 2) with the decrease of the film thickness was detected. The established fact is connected, firstly, with the structural characteristics of the films under study and, secondly, with the decrease in the intensity of the longitudinal interactions between the excited particles along with the reduction of the film thickness.
Experimental results of observations of a femtosecond photon echo excited in an ensemble of quantum nanometer-sized objects in thin semiconductor (ZnO, SiB, SiP) films at room temperature are presented. The observed properties of the photon echo are discussed. Recorded relaxation times of exciton quantum transitions and beats at the photon echo decay as a function of the increasing interval between the exciting pulses reveal the role played by the defects of the thin film in the formation of its exciton structure of quantum transitions investigated using angular optical echo spectroscopy.