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Physical Review B

Two-photon absorption by a quantum dot pair

Michael Scheibner, Sophia E. Economou, Ilya V. Ponomarev, Cameron V. Jennings, Allan S. Bracker, D. Gammon

Published Aug 31, 2015• 9 citations
Publisher

Abstract

The biexciton absorption spectrum of a pair of InAs/GaAs quantum dots is being studied by photoluminescence excitation spectroscopy. An absorption resonance with the characteristics of an instantaneous two-photon process reveals a coherent interdot two-photon transition. Pauli-selective tunneling is being used to demonstrate the transduction of the two-photon coherence into a nonlocal spin singlet state. The two-photon transition can be tuned spectrally by electric field, enabling amplification of its transition strength.

DOI
10.1103/physrevb.92.081411

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The biexciton absorption spectrum of a pair of InAs/GaAs quantum dots is being studied by photoluminescence excitation spectroscopy. An absorption resonance with the characteristics of an instantaneous two-photon process reveals a coherent interdot two-photon transition. Pauli-selective tunneling is being used to demonstrate the transduction of the two-photon coherence into a nonlocal spin singlet state. The two-photon transition can be tuned spectrally by electric field, enabling amplification of its transition strength.
Femtosecond spectral hole burning experiments were performed on InAs/GaAs quantum dots to investigate the influence of high excitation intensities. The observation of additional spectral holes, as well as distinct absorption line broadening are both attributed to two-photon absorption processes. These spectral holes can be unambiguously assigned to degenerate two-photon biexciton creation, whereas the absorption line broadening is a direct result of Coulomb renormalization, initiated by carriers created through two-photon absorption in the surrounding GaAs crystal matrix and the InAs wetting layer.
The strong confinement of semiconductor excitons in a quantum dot gives rise to atomlike behavior. The full benefit of such a structure is best observed in resonant excitation where the excited state can be deterministically populated and coherently manipulated. Because of the large refractive index and device geometry it remains challenging to observe resonantly excited emission that is free from laser scattering in III/V self-assembled quantum dots. Here we exploit the biexciton binding energy to create an extremely clean single photon source via two-photon resonant excitation of an InAs/GaAs quantum dot. We observe complete suppression of the excitation laser and multiphoton emissions. Additionally, we perform full coherent control of the ground-biexciton state qubit and observe an extended coherence time using an all-optical echo technique. The deterministic coherent photon pair creation makes this system suitable for the generation of time-bin entanglement and experiments on the interaction of photons from dissimilar sources.
Summary form only given. A realization of time-bin entanglement obtained from quantum dots would join the strength of long distance transmission that characterizes this type of entanglement with the single photon state purity of the quantum dot emission. Compared with polarization entanglement from quantum dots this scheme does not require elimination of the fine structure splitting responsible for partial distinguishability of the quantum dot cascades [1].Here, we present our results on coherent and resonant excitation of quantum dots, creation of photon pairs, scattering free emission and measurement of the high purity of the emitted photons [2, 3]. In addition, we will show our measurements of the generated time-bin entanglement. To excite a single quantum dot we performed two-photon resonant excitation of the biexciton state. Here, we exploited the biexciton binding energy in order to use the laser light which was not resonant to any photon emitted from the quantum dot (Fig. 1a). Our measurements were performed on a single self-assembled InAs/GaAs quantum dot. We confirmed the resonant nature of the excitation by observing Rabi oscillations (Fig. 1b). Additionally, we performed Ramsey interference measurement and determined the coherence time of the ground-biexciton state superposition. These measurements show that we can coherently transfer the phase of the excitation laser onto the quantum dot system, a necessary requirement to obtain time-bin entanglement.To test the statistics of the emitted state we measured the auto-correlation of the emitted photons (Fig. 3c). Here, the auto-correlation parameter at zero delay was measured to be 0.012(1) without and 0.0073(8) with background subtraction. In addition, we performed a measurement to characterize the state emitted from a quantum dot using a witness-based criterion described in [4]. With this measurement we experimentally confirmed that the resonantly excited quantum dot emits a non-Gaussian state of light (Fig. 1d). This measurement is the first of this nature ever performed on a semiconductor single photon emitter.
The observation of quantum mechanical interference in the exciton photoluminescence excitation (PLE) process in a semiconductor quantum dot is reported. A simple PLE spectroscopy revealed in a single InGaAs quantum dot a dynamic and continuous evolution of a resonance profile from a peak into a dip and to near transparency caused by an increase of excitation power density of only a few 100 W/cm2. A one-photon process via exciton states and a two-photon process via biexciton states, both of which return to the radiative exciton state, interfere quantum mechanically, resulting in a progressive decrease in exciton absorption under increasing excitation.