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IEEE Transactions on Applied Superconductivity

Photon Absorption Near the Gap Frequency in a Hot Electron Bolometer

Andrey Trifonov, Edward Tong, Y. Lobanov, N. Kaurova, R. Blundell, Gregory N Gol'tsman

Published Nov 21, 2016• 1 citation
Publisher

Abstract

The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I–V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.

DOI
10.1109/tasc.2016.2630032

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The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I–V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.
Using a microwave probe as a tool, we have performed experiments aimed at understanding the origin of the output-power fluctuations in hot-electron-bolometer (HEB) mixers. We use a probe frequency of 1.5 GHz. The microwave probe picks up impedance changes of the HEB, which are examined upon demodulation of the reflected wave outside the cryostat. This study shows that the HEB mixer operates in two different regimes under a terahertz pump. At a low pumping level, strong pulse modulation is observed, as the device switches between the superconducting state and the normal state at a rate of a few megahertz. When pumped much harder, to approximate the low-noise mixer operating point, residual modulation can still be observed, showing that the HEB mixer is intrinsically unstable even in the resistive state. Based on these observations, we introduced a low-frequency termination to the HEB mixer. By terminating the device in a 50-Ω resistor in the megahertz frequency range, we have been able to improve the output-power Allan time of our HEB receiver by a factor of four to about 10 s for a detection bandwidth of 15 MHz, with a corresponding gain fluctuation of about 0.035%.
Abstract Relaxation oscillations related to terahertz (THz) power detection in superconducting niobium nitride hot electron bolometers (HEBs) have been studied using microwaves as a probe. The reflected microwave signal, which is related to the impedance changes of the HEB irradiated by an incident THz signal, can be used to characterize relaxation oscillations. The frequency of relaxation oscillation switching between the superconducting and resistive states increases linearly with incident THz power but nonlinearly with bias voltage or bath temperature. The observed strong periodic pulse trains of relaxation oscillations have a maximum duty cycle of ∼50%. These strong switching pulses indicate that DC Joule heating, THz radiation or thermal energy is absorbed in the bi-stable region of the HEB intermittently. In addition to relaxation oscillations, we also see weaker oscillations when the device is in the resistive state, which we call intrinsic oscillations. These have a constant frequency at the order of 10 kHz which is independent of external stimuli. The weak periodic pulse trains at a constant frequency can be divided into mainly two types—one is the pulse train with a small duty cycle and the other is the quasi-square wave. Measurement of these oscillations in HEBs has some practical applications. Digital THz power measurement with frequencies below and above the gap frequency can be made based on the linearity between relaxation oscillation frequency and incident THz power. The relaxation oscillation frequency can be used to estimate the maximum speed of a THz direct detection system especially for a multi-pixel HEB array. In particular, extra noise induced by relaxation oscillations and intrinsic oscillations can be determined for the HEB operating as a THz direct detector.
We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film.
We present a study of the large signal frequency response of an HEB mixer over a wide frequency range. In our experiments, we have subjected the HEB mixer to incident electromagnetic radiation from 0.3 GHz to 1 THz. The mixer element is an NbN film deposited on crystalline quartz. The mixer chip is mounted in a waveguide cavity, coupled to free space with a diagonal horn. At microwave frequencies, electromagnetic radiation is applied through the coaxial bias port of the mixer block. At higher frequencies the input signal passes via the diagonal horn feed. At each frequency, the incident power is varied and a family of I-V curves is recorded. From the curves we identify 3 distinct regimes of operation of the mixer separated by the phonon relaxation frequency and the superconducting energy gap frequency observed at about 3 GHz and 660 GHz respectively. In this paper, we will present observed curves and discuss the results of our experiment.
We present an improved hot spot model that includes the non-uniform absorption of terahertz radiation on a superconducting HEB microbridge. We propose that the terahertz radiation is indeed absorbed mainly in the region of the superconducting microbridge with its energy gap (2Δ), in connection with the local electron temperature, less than the photon energy of the incoming radiation. With this improved hot spot model, we can precisely model LO (Local Oscillator)-pumped current-voltage and LO-pumped resistance-temperature characteristics of superconducting HEB mixers.
We have investigated the effect of injecting microwave radiation, with a frequency much lower than that corresponding to the energy gap of the superconductor, on the performance of the hot-electron bolometer mixer incorporated into a THz heterodyne receiver. More specifically, we show that exposing the mixer to microwave radiation does not cause a significant rise of the receiver noise temperature and fall of the mixer conversion gain so long as the microwave power is a small fraction of local oscillator power. The injection of a small, but controlled amount of microwave power therefore enables active compensation of local oscillator power and coupling fluctuations which can significantly degrade the gain stability of hot electron bolometer mixer receivers.