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Applied Physics Letters

Non-uniform absorption of terahertz radiation on superconducting hot electron bolometer microbridges

W. Miao, W. Zhang, Jiaqiang Zhong, S. C. Shi, Y. Delorme, R. Lefèvre, A. Féret, T. Vacelet

Published Feb 3, 2014• 25 citations
Publisher

Abstract

We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film.

DOI
10.1063/1.4864763

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We interpret the experimental observation of a frequency-dependence of superconducting hot electron bolometer (HEB) mixers by taking into account the non-uniform absorption of the terahertz radiation on the superconducting HEB microbridge. The radiation absorption is assumed to be proportional to the local surface resistance of the HEB microbridge, which is computed using the Mattis-Bardeen theory. With this assumption the dc and mixing characteristics of a superconducting niobium-nitride (NbN) HEB device have been modeled at frequencies below and above the equilibrium gap frequency of the NbN film.
We present an improved hot spot model that includes the non-uniform absorption of terahertz radiation on a superconducting HEB microbridge. We propose that the terahertz radiation is indeed absorbed mainly in the region of the superconducting microbridge with its energy gap (2Δ), in connection with the local electron temperature, less than the photon energy of the incoming radiation. With this improved hot spot model, we can precisely model LO (Local Oscillator)-pumped current-voltage and LO-pumped resistance-temperature characteristics of superconducting HEB mixers.
The superconducting energy gap is a fundamental characteristic of a superconducting film, which, together with the applied pump power and the biasing setup, defines the instantaneous resistive state of the Hot Electron Bolometer (HEB) mixer at any given bias point on the I–V curve. In this paper we report on a series of experiments, in which we subjected the HEB to radiation over a wide frequency range along with parallel microwave injection. We have observed three distinct regimes of operation of the HEB, depending on whether the radiation is above the gap frequency, far below it or close to it. These regimes are driven by the different patterns of photon absorption. The experiments have allowed us to derive the approximate gap frequency of the device under test as about 585 GHz. Microwave injection was used to probe the HEB impedance. Spontaneous switching between the superconducting (low resistive) state and a quasi-normal (high resistive) state was observed. The switching pattern depends on the particular regime of HEB operation and can assume a random pattern at pump frequencies below the gap to a regular relaxation oscillation running at a few MHz when pumped above the gap.
Superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixers at terahertz (THz) have been designed, fabricated and measured for applications in astronomy and cosmology. The NbN HEB mixer consists of a planar antenna and an NbN bridge connecting across the antenna's inner terminals on high-resistivity Si substrates. Double sideband (DSB) receiver noise temperatures of 698 K at 0.65 THz, 904 K at 1.6 THz, 1026 K at 2.5 THz and 1386 K at 3.1 THz have been obtained at 4.2 K without corrections and using changeable input local oscillation (LO) power to eliminate the affects of direct detection and instability of the LO power. The excess quantum noise factor beta of about 4 has been estimated using a quantum noise model.
This paper presents the modeling and measurement of a quasioptical niobium nitride superconducting hot electron bolometer mixer at submillimeter wavelengths. The modeling is performed with a distributed hot spot model which is based on solving a heat balance equation for electron temperature along the superconducting microbridge. Particular care has been taken during the modeling concerning the temperature-dependent resistance and the bias current dependence of the critical temperature of the device. The dc and mixing characteristics of this mixer have been computed and we have observed a quite good match between the predicted and the measured results for both dc characteristics and mixing performances at submillimeter wavelengths.
We present a characterization of a 1.5 THz waveguide niobium titanium nitride (NbTiN) superconducting hot electron bolometer (HEB) mixer which can be pumped by a commercial solid state tunable local oscillator (LO) source. The NbTiN HEB mixer is made from a 12 nm thick NbTiN thin film deposited on a quartz substrate at room temperature. A gold electrode is formed in situ on the NbTiN thin film without breaking vacuum to ensure good contact. The uncorrected DSB receiver noise temperature is measured to be 1700 K at 1.5 THz, whereas the mixer noise temperature is derived to be 1000 K after corrections for losses of the input optics and the intermediate frequency (IF) amplifier chain. The required LO power absorbed in the HEB mixer is evaluated to be 340 nW by using an isothermal technique. The IF gain bandwidth is supposed to be about 1.3 GHz or higher. The present results show that good performance can be obtained at 1.5 THz even with a relatively thick NbTiN film (12 nm), as in the case of 0.8 THz. In order to investigate the cooling mechanism of our HEB mixers, we have conducted performance measurements for a few HEB mixers with different microbridge sizes both at 1.5 and 0.8 THz. The noise performance of the NbTiN HEB mixers is found to depend on the length of the NbTiN microbridge. The shorter the microbridge is, the lower the receiver noise temperature is. This may imply a contribution of the diffusion cooling in addition to the phonon cooling.