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Bulletin of the American Physical Society

Mitigating the effects of charge noise and improving the coherence of a quantum dot hybrid qubit

Brandur Thorgrimsson, Dohun Kim, Yuan‐Chi Yang, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, D. E. Savage, M. G. Lagally, Mark G. Friesen, S. N. Coppersmith, M. A. Eriksson

Published Nov 15, 2016• 2 citations
OpenAlex

Abstract

Identifying dominant sources of decoherence is an important step in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($\Gamma_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit are limited by charge noise for a large range of detunings. We show that by tuning the parameters of the qubit, and by operating the qubit at larger detunings, the coherence times can be increased by more than an order of magnitude. We achieve a Ramsey decay time $T_{2}^{*}$ of $127~\mathrm{ns}$ and a Rabi decay time, $1/\Gamma_{\mathrm{Rabi}}$, exceeding $1~\mathrm{\mu s}$. We show that the slowest $\Gamma_{\mathrm{Rabi}}$ is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself.

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arXiv:1806.05448•Advanced Quantum Technologies•Sep 20, 2018•9 citations
Identifying dominant sources of decoherence is an important step in understanding and improving quantum systems. Here we show that the free induction decay time (T2∗T_{2}^{*}T2∗​) and the Rabi decay rate (ΓRabi\Gamma_{\mathrm{Rabi}}ΓRabi​) of the quantum dot hybrid qubit are limited by charge noise for a large range of detunings. We show that by tuning the parameters of the qubit, and by operating the qubit at larger detunings, the coherence times can be increased by more than an order of magnitude. We achieve a Ramsey decay time T2∗T_{2}^{*}T2∗​ of 127 ns127~\mathrm{ns}127 ns and a Rabi decay time, 1/ΓRabi1/\Gamma_{\mathrm{Rabi}}1/ΓRabi​, exceeding 1 μs1~\mathrm{\mu s}1 μs. We show that the slowest ΓRabi\Gamma_{\mathrm{Rabi}}ΓRabi​ is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself.
Abstract Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here, we show that the free induction decay time ( T2∗T_2^*T2∗​ T2* ) and the Rabi decay rate (ΓRabi) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operating in the spin-like regime of this qubit, and choosing parameters that increase the qubit’s resilience to charge noise (which we show is presently the limiting noise source for this qubit), we achieve a Ramsey decay time T2∗T_2^*T2∗​ T2* of 177 ns and a Rabi decay time 1/ΓRabi exceeding 1 μs. We find that the slowest ΓRabi is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself.
Semiconductor double quantum-dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve ${X}_{\ensuremath{\pi}}$ gates with fidelities higher than 99.999.9%99.9.
We study the dynamics of a pulse-gated semiconductor double-quantum-dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations is low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate.
High-Fidelity Single-Qubit Gates Via Strongly Driving of a Double Quantum Dot Hybrid Qubit with 1/f1/f1/f Charge Noise
Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of 1/f1/f1/f charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-shaping techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve XπX_{\pi}Xπ​ gates with fidelities higher than 99.9%99.9\%99.9%.
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2∗{T}_{2}^{*}T2∗​ ranges from 127 ps to 2.1 ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise (charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2∗{T}_{2}^{*}T2∗​, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127 to 760 ps, demonstrating that low-frequency noise processes are an important dephasing mechanism.
Abstract The unavoidable effect of the environmental noise due to nuclear spins and charge traps is included in the study of the hybrid qubit dynamics. Hybrid qubit owes its name to the advantageous combination of manipulation speed of a charge qubit with the longevity of a spin qubit. It consists of three electrons confined through external gate voltages in a double quantum dot and deserves special interest in quantum computation applications due to its advantages in terms of fabrication, control, and only electrical manipulation. The fluctuations of the global magnetic field do not affect the dynamics of the hybrid qubit that is defined in a decoherence‐free subspace. The main sources of decoherence come from local magnetic fluctuations and charge fluctuations. This work is based on the hypothesis that gate voltages are fixed and kept constant while qubit evolves in time. Coherence time of the hybrid qubit is extracted when model parameters take values achievable experimentally in the nuclear‐free isotope 28 Si, natural Si, and GaAs hosts.