We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. A hybrid qubit behaves as a charge qubit when the detuning is close to zero and as a spin qubit for large detuning values. It is realized starting from an electrostatically defined double quantum dot where three electrons are confined and manipulated through only electrical tuning. By employing a three-level effective model for the qubit and describing the environment bath as a series of harmonic oscillators in the thermal equilibrium states, we extract the relaxation and decoherence times as a function of the bath spectral density and of the bath temperature using the Bloch-Redfield theory. For Si quantum dots the energy dispersion is strongly affected by the physics of the valley, i.e., the conduction band minima, so we also included the contribution of the valley excitations in our analysis. Our results offer fundamental information on the system decoherence properties when the unavoidable interaction with the environment is included and temperature effects are considered.
The charge and spin degrees of freedom of an electron constitute natural bases for constructing quantum two level systems, or qubits, in semiconductor quantum dots. The quantum dot charge qubit offers a simple architecture and high-speed operation, but generally suffers from fast dephasing due to strong coupling of the environment to the electron’s charge. On the other hand, quantum dot spin qubits have demonstrated long coherence times, but their manipulation is often slower than desired for important future applications. This talk will present experimental progress of a ‘hybrid’ qubit, formed by three electrons in a Si/SiGe double quantum dot, which combines desirable characteristics (speed and coherence) in the past found separately in qubits based on either charge or spin degrees of freedom. Using resonant microwaves, we first discuss qubit operations near the ‘sweet spot’ for charge qubit operation. Along with fast ( >GHz) manipulation rates for any rotation axis on the Bloch sphere, we implement two independent tomographic characterization schemes in the charge qubit regime: traditional quantum process tomography (QPT) and gate set tomography (GST). We also present resonant qubit operations of the hybrid qubit performed on the same device, DC pulsed gate operations of which were recently demonstrated. We demonstrate three-axis control and the implementation of dynamic decoupling pulse sequences. Performing QPT on the hybrid qubit, we show that AC gating yields π rotation process fidelities higher than 93% for X-axis and 96% for Z-axis rotations, which demonstrates efficient quantum control of semiconductor qubits using resonant microwaves. We discuss a path forward for achieving fidelities better than the threshold for quantum error correction using surface codes.
The design and study of hybrid qubits is driven by their ability to get along the best of charge qubits and of spin qubits, {\em i.e.} the speed of operation of the former and the very slow decoherence rates of the latter ones. There are several proposals to implement hybrid qubits, this works focuses on the spectral properties of an one-electron hybrid qubit. By design, the information would be stored in the electronic spin and the switching between the qubit basis states would be achieved using an external ac electric field. The electron is confined in a two-dimensional quantum dot, whose confining potential is given by a quartic potential, features that are typical of GaAS quantum dots. Besides the confining potential that characterizes the quantum dot there are two static magnetic fields applied to the system, one is a large constant Zeeman field and the other one has a constant gradient. We study the spectral properties of the model Hamiltonian, a Scrödinger-Pauli Hamiltonian with realistic parameters, using the Ritz method. In particular, we look for regions of the parameter space where the lowest eigenenergies and their eigenfunctions allow to define a qubit which is stable under perturbations to the design parameters. We put special attention to the constraints that the design imposes over the magnetic fields, the tuning of the energy gap between the qubit states and the expectation value of the spin operator where the information would be stored.
Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.
A major problem facing the realisation of scalable solid-state quantum computing is that of overcoming decoherence - the process whereby phase information encoded in a qubit is lost as the qubit interacts with its environment. Due to the vast number of environmental degrees of freedom, it is challenging to accurately calculate decoherence times
T2, especially when the qubit and environment are highly correlated. Hybrid or mixed electron-nuclear spin qubits, such as donors in silicon, possess 'optimal working points' (OWPs) which are sweet-spots for reduced decoherence in magnetic fields. Analysis of sharp variations of
T2 near OWPs was previously based on insensitivity to classical noise, even though hybrid qubits are situated in highly correlated quantum environments, such as the nuclear spin bath of
29Si impurities. This presented limited understanding of the decoherence mechanism and gave unreliable predictions for
T2. I present quantum many-body calculations of the qubit-bath dynamics, which (i) yield
T2 for hybrid qubits in excellent agreement with experiments in multiple regimes, (ii) elucidate the many-body nature of the nuclear spin bath and (iii) expose significant differences between quantum-bath and classical-field decoherence. To achieve these, the cluster correlation expansion was adapted to include electron-nuclear state mixing. In addition, an analysis supported by experiment was carried out to characterise the nuclear spin bath for a bismuth donor as the hybrid qubit, a simple analytical formula for
T2 was derived with predictions in agreement with experiment, and the established method of dynamical decoupling was combined with operating near OWPs in order to maximise
T2. Finally, the decoherence of a
29Si spin in proximity to the hybrid qubit was studied, in order to establish the feasibility for its use as a quantum register.
We investigate the behavior of qubits consisting of three electron spins in double and triple quantum dots subject to external electric fields. Our model includes two independent bias parameters, $\ensuremath{\varepsilon}$ and ${\ensuremath{\varepsilon}}_{M}$, which both couple to external electromagnetic fields and can be controlled by gate voltages applied to the quantum dot structures. By varying these parameters, one can switch the qubit type by shifting the energies in the single quantum dots, thus changing the electron occupancy in each dot. Starting from the asymmetric resonant exchange qubit with a (2,0,1) and (1,0,2) charge admixture, one can smoothly cross over to the resonant exchange qubit with a detuned (1,1,1) charge configuration, and to the exchange-only qubit with the same charge configuration but equal energy levels down to the hybrid qubits with (1,2,0) and (0,2,1) charge configurations. Here,
(l,m,n) describes a configuration with
l electrons in the left dot,
m electrons in the center dot, and
n electrons in the right dot. We first focus on random electromagnetic field fluctuations, i.e., ``charge noise,'' at each quantum dot resulting in dephasing of the qubit, and we provide a complete map of the resulting dephasing time as a function of the bias parameters. We pay special attention to the so-called sweet spots and double sweet spots of the system, which are least susceptible to noise. In the second part, we investigate the coupling of the qubit system to the coherent quantized electromagnetic field in a superconducting strip-line cavity, and we also provide a complete map of the coupling strength as a function of the bias parameters. We analyze the asymmetric qubit-cavity coupling via $\ensuremath{\varepsilon}$ and the symmetric coupling via ${\ensuremath{\varepsilon}}_{M}$.