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arXiv:1307.8406 · Proceedings of the National Academy of Sciences

High-fidelity gates in quantum dot spin qubits

Teck Seng Koh, S. N. Coppersmith, Mark G. Friesen

Published Nov 19, 2013• 41 citations
arXivHTMLPDF

Abstract

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.

DOI
10.1073/pnas.1319875110

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Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. The different schemes can be difficult to compare meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance, and a gate-like process known as stimulated Raman adiabatic passage. These gates are all mediated by an exchange interaction that is controlled experimentally using the interdot tunnel coupling g and the detuning [Symbol: see text], which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity (f) for fixed g as a function of the other control parameters; this yields an f(opt)(g) that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound f(max) that is specific to the qubit-gate combination. We show that similar gate fidelities (~99:5%) should be attainable for singlet-triplet qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields ΔB produced by nuclear spins.
A logical qubit based on electron-spin singlet-triplet states in a semiconductor double dot has emerged as one of the promising candidates for quantum information processing. Here we propose a systematic method to implement rapid quantum gates in the nanosecond time scale for both a single qubit and multiqubits, by applying adiabatic driving pulses with tunable velocity. This yields considerable high-fidelity gate operations reaching 99.999.9%99.9 which are crucial to scalable quantum computation in a semiconductor-based architecture, even considering the demanding experimental constraints and realistic spin and charge noises.
In order to enable semiconductor-based quantum computing with many qubits, issues like residual interqubit coupling and constraints from scalable control hardware need to be tackled to retain the high gate fidelities demonstrated in current single-qubit devices. Here we focus on two exchange-coupled singlet-triplet spin qubits, considering realistic control hardware as well as Coulomb and exchange coupling that cannot be fully turned off. Using measured noise spectra, we optimize realistic control pulses and show that two-qubit (single-qubit) gate fidelities of 99.90% ($\ensuremath{\ge}99.69%$) can be reached in GaAs, while 99.99% ($\ensuremath{\ge}99.95%$) can be achieved in Si.
A key ingredient for fault-tolerant quantum computers are sufficiently accurate logic gates on single and multiple qubits in the presence of decohering noise. In this thesis, we theoretically develop and experimentally demonstrate such high-fidelity quantum gates for semiconductor-based quantum computing. Specifically, we consider a qubit encoded in the singlet and one triplet state of two electron spins in GaAs. While its potential for optical coupling makes GaAs an attractive material, highly auto-correlated magnetic field noise from fluctuating nuclear spins leads to considerably lower coherence times than for Si-based devices, where nuclear spins can be removed by isotopic purification. In addition to noise, the control methods used in earlier experiments are based on unrealistic approximations. For these reasons, fidelities well above 99 %, as required by current quantum error correction (QEC) schemes, have not been obtained before this thesis. To tackle these issues, we extend the filter function formalism to describe quantum gates and processes in the presence of experimentally relevant non-Markovian noise. Since this formalism can consider all relevant noise sources in a computationally efficient manner, it can be used to find optimal control pulses by numerical optimization, leading to predicted single-qubit gate fidelities of 99.9 %. Furthermore, we deal with the considerable control challenges associated with this qubit type by experimental calibration of the optimized control pulses. To this end, we extend our previous experimental gate set calibration (GSC) routine to remove systematic gate errors on an arbitrary number of qubits. We apply the numerically optimized single-qubit control pulses to our GaAs sample and experimentally calibrate them with GSC. This procedure yields an average gate fidelity of 99.50 ± 0.04 % and a low leakage rate of 0.13 ± 0.03 % out of the computational subspace, characterized by randomized benchmarking. We also optimize realistic two-qubit control pulses, considering current control hardware as well as interqubit Coulomb and exchange coupling that cannot be fully turned off. Using measured noise spectra, we show that two-qubit gate fidelities of 99.90 % can be reached in GaAs, while 99.99 % can be achieved in Si. These results demonstrate that high-fidelity gates can be realized even in the presence of nuclear spins as in GaAs.
A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the gate fidelities among qubit implementations due to pulse timing errors by using a realistic set of values for the error parameters of control amplitudes.
Motivated by recent experiments of Zajac et al. [Science 359, 439 (2018)], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, nonadiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly.
We analyze a simple exchange-based two-qubit gate for singlet-triplet qubits in gate-defined semiconductor quantum dots that can be implemented in a single exchange pulse. Excitations from the logical subspace are suppressed by a magnetic field gradient that causes spin-flip transitions to be non-energy-conserving. We show that the use of adiabatic pulses greatly reduces leakage processes comapred to square pulses. We also characterize the effect of charge noise on the entanglement fidelity of the gate both analytically and in simulations; demonstrating high entanglement fidelities for physically realistic experimental parameters. Specifically we find that it is possible to achieve fidelities and gate times that are comparable to single-qubit states using realistic magnetic field gradients.