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Chinese Physics B

Large scale fabrication of nitrogen vacancy-embedded diamond nanostructures for single-photon source applications

Qianqing Jiang, Wuxia Li, Chengchun Tang, Yanchun Chang, Tingting Hao, Xinyu Pan, Haitao Ye, Junjie Li, Changzhi Gu

Published Nov 1, 2016• 17 citations
Publisher

Abstract

Large scale fabrication of nitrogen vacancy-embedded diamond nanostructures for single-photon source applications* , Jiang, Qianqing, Li, Wuxia, Tang, Chengchun, Chang, Yanchun, Hao, Tingting, Pan, Xinyu, Ye, Haitao, Li, Junjie, Gu, Changzhi
DOI
10.1088/1674-1056/25/11/118105

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Nitrogen-vacancy (NV) centers in diamond photonic nanostructures have attracted much attention as efficient single photon emitters and quantum bits. These quantum optical devices mostly require single or low-density NV centers doped in thin diamond membranes. In contrast, this study focuses on diamond photonic nanostructures with a high concentration of NV centers to achieve a diamond color center laser with a sufficient gain available as a visible light source and a sensitive magnetic-field sensor. We employ high-dose helium ion implantation to type-Ib diamond substrates and thermal annealing, which enables us to obtain uniform thin diamond membranes containing a dense ensemble of NV centers. Luminescence spectroscopy reveals the kinetics of NV centers at high temperature from which we find an optimum annealing temperature maximizing the NV center emission while suppressing the transformation from NV to H3 centers. Furthermore, fine photonic nanowires are also successfully fabricated in the air-suspended diamond membrane, and they exhibit intense photoluminescence from the NV centers with a concentration as high as 7 × 1016 cm−3 (0.4 ppm). These results suggest a route to the fabrication of diamond photonic nanostructures containing a dense ensemble of NV centers, which can be a key material for developing diamond-based light emitting and magnetic-field sensing devices.
We investigate native nitrogen vacancy (NV) and silicon vacancy (SiV) color centers in a commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per μm3 and moderate coherence time (T2 = 5 μs) embedded in an ensemble of SiV centers. Using low temperature luminescence of SiV centers as a probe, we prove the high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to 100 mm, it offers the opportunity to up-scale diamond-based device fabrication.