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International Topical Meeting on Microwave Photonics

Ultrafast modulation of resonant light and transient wave mixing in semiconductor quantum wells

Arup Neogi, Hitoshi Kawaguchi

Published Dec 24, 2002• 1 citation
Publisher

Abstract

A density matrix approach is employed to investigate a high speed all-optical modulation process in semiconductor quantum wells. The effect of nonlinear wave-mixing on the modulation process due to asymmetricity of the system is also discussed.
DOI
10.1109/mwp.1996.662081

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We explore the transient characteristics of an interband resonant light modulation process by ultrashort intersubband resonant light pulses in semiconductor quantum wells (QW's). The modulation characteristics in a three-level semiconductor QW system, including the effects due to in-plane momentum, have been investigated by a numerical analysis of the coupled Bloch equations using a density-matrix approach. We have studied the effect of the carrier density and the nature of the intersubband coupling light on the transient absorption features of the interband light. The modulation process has been compared in doped and undoped QW's. The switching behavior of the strong interband light field in presence of a train of intersubband light pulses has also been discussed.
We analyze the optical modulation of an interband resonant light pulse by intersubband resonant light pulses in a three-level quantum well system. The origin of the third order self-saturation optical nonlinearity resulting in the modification of the interband light absorption is assumed to lie in the carrier density modulation induced by the interband and intersubband transitions. The optical nonlinearity can be optimized to achieve the maximum modulation by applying control light pulses shorter than the intersubband energy relaxation time but longer than the intersubband phase relaxation time. We have also experimentally investigated the material system suitable for optical communication regime and have observed that the In0.53Ga0.47As/AlAs0.56Sb0.44 quantum well lattice matched to InP yielding an intersubband transition as short as 1.4 μm is the most suitable system for the proposed modulation scheme.
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An efficient modulation scheme at relatively lower control light intensities is proposed using ultrashort interband and intersubband-resonant coupling light pulses in a novel asymmetric In x Ga1-x As/AlAs semiconductor quantum well structure. The shape of the intersubband-control light pulses can manipulate the interband-signal light pulse absorption. The carrier relaxation rate of the quantum well system can be estimated from the interband nonlinear optical parameters induced by the intersubband control light field. The modulation efficiency in the proposed structure is twice than in a conventional symmetric quantum well structure. This reduces the threshold optical energy below 1 pJ in a 100-µm2 waveguide structure on using 500 fs control light pulses owing to the enhanced optical nonlinearities in the proposed structure.