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Optical Materials Express

Large photoluminescence enhancement of Er^3+: GdVO_4 crystal in both green and middle infrared regions under moderate low magnetic fields

Junpei Zhang, Zhiqiang Zhong, Xia Wang, Zongwei Ma, Shaoliang Wang, Yibo Han, Junbo Han

Published Oct 6, 2016• 9 citations
Publisher

Abstract

Strong green and middle infrared (MIR) photoluminescence (PL) has been observed in Er3+: GdVO4 crystal excited by a 488 nm argon laser. Nearly 25 times of magnitude increase of PL intensity has been obtained for both green and MIR emissions under moderate low magnetic field of 4 T. The temperature- and magnetic field- dependent PL demonstrated that both excitation and emission energy transitions have made contributions to the PL enhancement, and stronger PL enhancement usually happens at the transitions with energy levels possessing larger population of electrons. The results are important and encouraging since it not only reveals the originations of the magnetic induced PL enhancement, but also drag people closer to the utilization of magnetic induced PL modulations under moderate low magnetic field.

DOI
10.1364/ome.6.003446

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Applied Physics Letters•Jan 6, 1997•31 citations
Strong green and middle infrared (MIR) photoluminescence (PL) has been observed in Er3+: GdVO4 crystal excited by a 488 nm argon laser. Nearly 25 times of magnitude increase of PL intensity has been obtained for both green and MIR emissions under moderate low magnetic field of 4 T. The temperature- and magnetic field- dependent PL demonstrated that both excitation and emission energy transitions have made contributions to the PL enhancement, and stronger PL enhancement usually happens at the transitions with energy levels possessing larger population of electrons. The results are important and encouraging since it not only reveals the originations of the magnetic induced PL enhancement, but also drag people closer to the utilization of magnetic induced PL modulations under moderate low magnetic field.
A bright green photoluminescence (PL) from 4S3∕2 → 4I15∕2 emission band in Er3+:YVO4 single crystal has been observed with the excitation of an argon laser at 488.0 nm. More than two orders of PL enhancement have been obtained under the effect of magnetic fields, and the enhancement factor f reaches 170 when the applied magnetic field is 7.7 T under the sample temperature of 4.2 K. Unusually, the PL enhancements only happen at some certain magnetic fields (Bcs), and a decrease of sample temperature will lead to the increase of f and decrease of Bc. The results confirm that this PL enhancement originates from the resonance excitation of the electron transitions induced by the cross of the laser energy and the absorption energy modulated by both the magnetic field and temperature. This special PL enhancement in Er3+:YVO4 single crystal can be applied in the calibration of pulsed high magnetic field, detection of material fine energy structures, and modulation of magneto-optical devices.
An optical method for the sensitive detection of excited energy levels in rare-earth luminescent materials is developed based on the magnetic field induced photoluminescence (PL) enhancement phenomenon observed in Er3+:YVO4 crystals. Since the PL intensity of rare-earth luminescent materials is sensitive to the excitation efficiency, continuous tuning of the excitation laser wavelength under a magnetic field could result in a mapping of PL enhancement peaks vs excitation wavelength. This enables us to figure out the fine energy levels and the corresponding Lander g factors of materials, such as Er3+:YVO4 crystal as an example. Comparison between this method and the Zeeman splitting technique demonstrates that the proposed technique is a powerful solution to detect the fine energy structures and Lander g factors of rare-earth luminescent materials.
Abstract Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal field splitting of the transition 4 I 13/2 → 4 I 15/2 .We conclude that the symmetry of the two low energy excited (initial) state levels,in order of increasing energy,are Γ 8 and Γ 6 , from which to the splitting state levels of 4 I 15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er 3+ , but the spectral features are similar,indicating oxygen codopants can enhance the intensity of T d crystal field rather than change the T d symmetry of the crystal field on the Er 3+ sites.
The rare-earth element, erbium (Er), was successfully diffused into GaAs and InP for the first time. Two intense and three weak sharp photoluminescence (PL) lines related with Er were observed at a wavelength of ∼1.55 μm both in GaAs and InP. It was found, for the first time, that the emission energy and the linewidth of the two intense Er-related PL lines do not depend on temperatures up to 220 K. This clearly indicates that these sharp emission lines are due to 4f-intracenter transitions in triply ionized erbium (Er3+) ions, and that the 4f orbitals are well shielded from a crystal field by the outer closed orbitals. Furthermore, it was found that the intensity ratio of the five emission lines from Er3+ is independent of the excitation power density. The results reveal that the Er3+ ion substitutes a cation site both in GaAs and InP, and that the five PL lines correspond to the transitions from the first excited state to the five crystal-field-split ground states of Er3+ ion with a tetrahedral (Td) symmetry.
Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal-field splitting of the transition 4I13/2→4I15/2.We concludethat the symmetry of the two low-energy excited (initial) state levels,in order of increasing energy,are Γ8 and Γ6, from which to the splitting state levels of 4I15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er3+, but the spectral features are similar,indicating oxygen codopants can enhance the intensity of Td crystal field rather than change the Td symmetry of the crystal field on the Er3+ sites.
Using a laser diode modulated at 250 and 500 MHz, dependence of enhanced absorption on both sample length and temperature was investigated in an erbium doped yttrium aluminum garnet crystal. The transmitted laser intensity decreased with a decay time of 300 ps for sample lengths greater than 3.0 mm and temperatures higher than 50 K when the incident laser intensity increased. In addition, an emission peak was observed near 835 nm corresponding to the transition from the S3/24 level to the I13/24 in Er3+. It was suggested that the enhanced absorption was caused by stimulated emission in three excited states.