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Acta Physica Sinica

CRYSTAL-FIELD SPLITTING OF Er3+ IN SILICON

Hongbing Lei, Qinqing Yang, WANG QI-MING, 中国科学院半导体研究所集成光电子国家重点实验室，北京 100083

Published Jan 1, 1998• 7 citations
Publisher

Abstract

Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal-field splitting of the transition 4I13/2→4I15/2.We concludethat the symmetry of the two low-energy excited (initial) state levels,in order of increasing energy,are Γ8 and Γ6, from which to the splitting state levels of 4I15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er3+, but the spectral features are similar,indicating oxygen codopants can enhance the intensity of Td crystal field rather than change the Td symmetry of the crystal field on the Er3+ sites.

DOI
10.7498/aps.47.1201

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CRYSTAL FIELD SPLITTING OF Er 3+ IN SILICON

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Abstract Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal field splitting of the transition 4 I 13/2 → 4 I 15/2 .We conclude that the symmetry of the two low energy excited (initial) state levels,in order of increasing energy,are Γ 8 and Γ 6 , from which to the splitting state levels of 4 I 15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er 3+ , but the spectral features are similar,indicating oxygen codopants can enhance the intensity of T d crystal field rather than change the T d symmetry of the crystal field on the Er 3+ sites.

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The absorption spectra of the Er3+ ions embedded in the AlN matrix have been investigated. The admixture of erbium was introduced in bulk AlN crystals by diffusion. The absorption lines, which are associated with the intraconfigurational electronic f–f-transitions from the ground 4 I 15/2-state to the levels of ion Er3+ excited states have been observed in the spectral range of 370–700 nm. The transitions to the state levels 4 F 9/2, 2 H 11/2, 4 F 7/2, 4 F 5/2, 2 H 9/2, and 4 G 11/2 have been investigated in detail at the temperature T = 2 K. The number of the observed lines for these transitions coincides with the theoretically possible one for the electronic f–f-transitions in the ions Er3+, which are in the crystal field with the symmetry below cubic. The narrowness of the observed lines and their number convincingly testify the replacement of preferably one regular crystalline position by erbium ions. The implementation of Er3+ in the Al3+ position with the local symmetry C 3v appears the most probable. The energy positions of the levels of excited states for the investigated transitions have been determined. The diagram of the Er3+ ion energy levels in the AlN crystals has been built.

Physics of the Solid State•Dec 1, 2017•2 citations
Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal-field splitting of the transition 4I13/2→4I15/2.We concludethat the symmetry of the two low-energy excited (initial) state levels,in order of increasing energy,are Γ8 and Γ6, from which to the splitting state levels of 4I15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er3+, but the spectral features are similar,indicating oxygen codopants can enhance the intensity of Td crystal field rather than change the Td symmetry of the crystal field on the Er3+ sites.
Abstract Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal field splitting of the transition 4 I 13/2 → 4 I 15/2 .We conclude that the symmetry of the two low energy excited (initial) state levels,in order of increasing energy,are Γ 8 and Γ 6 , from which to the splitting state levels of 4 I 15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er 3+ , but the spectral features are similar,indicating oxygen codopants can enhance the intensity of T d crystal field rather than change the T d symmetry of the crystal field on the Er 3+ sites.
The rare-earth element, erbium (Er), was successfully diffused into GaAs and InP for the first time. Two intense and three weak sharp photoluminescence (PL) lines related with Er were observed at a wavelength of ∼1.55 μm both in GaAs and InP. It was found, for the first time, that the emission energy and the linewidth of the two intense Er-related PL lines do not depend on temperatures up to 220 K. This clearly indicates that these sharp emission lines are due to 4f-intracenter transitions in triply ionized erbium (Er3+) ions, and that the 4f orbitals are well shielded from a crystal field by the outer closed orbitals. Furthermore, it was found that the intensity ratio of the five emission lines from Er3+ is independent of the excitation power density. The results reveal that the Er3+ ion substitutes a cation site both in GaAs and InP, and that the five PL lines correspond to the transitions from the first excited state to the five crystal-field-split ground states of Er3+ ion with a tetrahedral (Td) symmetry.
Photoluminescence (PL) spectra of Er3+ in an Er-doped silicon film were recorded at 2 and 77 K over the wavelength range from 1.52 to 1.68 μm, which includes optical transitions between the Er3+ I13/24 and I15/24 manifolds. These spectra were then analyzed to determine the nature of the electrostatic field at the site of the Er ion that governs the ion’s optical behavior. The PL spectra were analyzed three different ways: by considering the Er3+ ions to be occupying sites of Td, C3, or D2d point group symmetry. Transition energies and magnetic dipole transition probabilities were calculated for each case by diagonalizing a Hamiltonian representing the free-ion and crystal-field interactions in a Russell–Saunders basis of states spanning the lowest 15 J multiplets of the 4f11 electronic configuration of Er3+. Crystal-field parameters were varied in each case to find the best agreement with the experiment. Our results showed that the site symmetry of the Er3+ ions most consistent with the data is D2d. For this case, the rms deviation between the experimental and calculated energy levels is 3.3 cm−1 with the calculated magnetic dipole transition probabilities in qualitative agreement with the experiment.
This paper describes a scheme for the numerical calculation of crystal field (CF) energy levels and at the same time wave functions of the trivalent erbium ion in cubic symmetry. The 16-fold degenerate term 4I15=2 of the trivalent erbium ion splits into three Stark quartets Γ8 and two different doublets Γ6 and Γ7 (irreducible representations). The CF energy matrix of the Er3+ ion has been constructed and calculated from the complete diagonalization method, and the corresponding wave functions were used to calculate the ground state g-values. This method is outlined and illustrated by the examples of the Si:Er for comparison. The calculated g-factors are g = 6:8 and g = 6:0 for Γ6 and Γ7, respectively
Abstract Er implanted Si is a candidate for quantum and photonic applications; however, several different Er centres are generated, and their symmetry, energy level structure, magnetic and optical properties, and mutual interactions have been poorly understood, which has been a major barrier to the development of these applications. Optically modulated magnetic resonance (OMMR) gives a spectrum of the modulation of an electron paramagnetic resonance (EPR) signal by a tuneable optical field. Our OMMR spectrum of Er implanted Si agrees with three independent measurements, showing that we have made the first measurement of the crystal field splitting of the 4I13/2 manifold of Er implanted Si, and allows us to revise the crystal field splitting of the 4I15/2 manifold. This splitting originates from a photoluminescence (PL) active O coordinated Er centre with orthorhombic C2v symmetry, which neighbours an EPR active O coordinated Er centre with monoclinic C1h symmetry. This pair of centres could form the basis of a controlled NOT (CNOT) gate.
The absorption spectra of the Er3+ ions embedded in the AlN matrix have been investigated. The admixture of erbium was introduced in bulk AlN crystals by diffusion. The absorption lines, which are associated with the intraconfigurational electronic f–f-transitions from the ground 4 I 15/2-state to the levels of ion Er3+ excited states have been observed in the spectral range of 370–700 nm. The transitions to the state levels 4 F 9/2, 2 H 11/2, 4 F 7/2, 4 F 5/2, 2 H 9/2, and 4 G 11/2 have been investigated in detail at the temperature T = 2 K. The number of the observed lines for these transitions coincides with the theoretically possible one for the electronic f–f-transitions in the ions Er3+, which are in the crystal field with the symmetry below cubic. The narrowness of the observed lines and their number convincingly testify the replacement of preferably one regular crystalline position by erbium ions. The implementation of Er3+ in the Al3+ position with the local symmetry C 3v appears the most probable. The energy positions of the levels of excited states for the investigated transitions have been determined. The diagram of the Er3+ ion energy levels in the AlN crystals has been built.