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Acta Physica Sinica

CRYSTAL FIELD SPLITTING OF Er 3+ IN SILICON

Ong B

Published Jan 1, 1998• 0 citations
OpenAlex

Abstract

Abstract Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal field splitting of the transition 4 I 13/2 → 4 I 15/2 .We conclude that the symmetry of the two low energy excited (initial) state levels,in order of increasing energy,are Γ 8 and Γ 6 , from which to the splitting state levels of 4 I 15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er 3+ , but the spectral features are similar,indicating oxygen codopants can enhance the intensity of T d crystal field rather than change the T d symmetry of the crystal field on the Er 3+ sites.

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Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal-field splitting of the transition 4I13/2→4I15/2.We concludethat the symmetry of the two low-energy excited (initial) state levels,in order of increasing energy,are Γ8 and Γ6, from which to the splitting state levels of 4I15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er3+, but the spectral features are similar,indicating oxygen codopants can enhance the intensity of Td crystal field rather than change the Td symmetry of the crystal field on the Er3+ sites.

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implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold. We find that both Dy and Tm ions are in a Si substitution site with local tetragonal symmetry. Knowledge of rare-earth ion symmetry is important in maximising the number of optically active centres and for quantum technology applications where local symmetry can be used to control decoherence.

Optics Express•Nov 17, 2014•17 citations
Abstract Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal field splitting of the transition 4 I 13/2 → 4 I 15/2 .We conclude that the symmetry of the two low energy excited (initial) state levels,in order of increasing energy,are Γ 8 and Γ 6 , from which to the splitting state levels of 4 I 15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er 3+ , but the spectral features are similar,indicating oxygen codopants can enhance the intensity of T d crystal field rather than change the T d symmetry of the crystal field on the Er 3+ sites.
Rare earth element of erbium implanted into silicon was studied by photoluminescence,and nine spectral lines were observed.The analysis of the symmetry of crystal field shows that the nine spectral lines come from the crystal-field splitting of the transition 4I13/2→4I15/2.We concludethat the symmetry of the two low-energy excited (initial) state levels,in order of increasing energy,are Γ8 and Γ6, from which to the splitting state levels of 4I15/2 nine radiative transitions are allowed.Oxygen codopants can increase greatly the PL intensity of Er3+, but the spectral features are similar,indicating oxygen codopants can enhance the intensity of Td crystal field rather than change the Td symmetry of the crystal field on the Er3+ sites.
The rare-earth element, erbium (Er), was successfully diffused into GaAs and InP for the first time. Two intense and three weak sharp photoluminescence (PL) lines related with Er were observed at a wavelength of ∼1.55 μm both in GaAs and InP. It was found, for the first time, that the emission energy and the linewidth of the two intense Er-related PL lines do not depend on temperatures up to 220 K. This clearly indicates that these sharp emission lines are due to 4f-intracenter transitions in triply ionized erbium (Er3+) ions, and that the 4f orbitals are well shielded from a crystal field by the outer closed orbitals. Furthermore, it was found that the intensity ratio of the five emission lines from Er3+ is independent of the excitation power density. The results reveal that the Er3+ ion substitutes a cation site both in GaAs and InP, and that the five PL lines correspond to the transitions from the first excited state to the five crystal-field-split ground states of Er3+ ion with a tetrahedral (Td) symmetry.
The Stark splitting of the energy levels of Er 3+ ions implanted in a structure made up of alternating layers of silicon dioxide and quasi-ordered silicon nanocrystals is calculated. The level splitting is caused by the electric field of the image charges induced at the interfaces between layers with different permittivities. The splitting was established to increase as the contrast in permittivity between the silicon dioxide and silicon nanocrystal layers increases, as well as when the erbium ions approach the layer interface. The results obtained offer an adequate explanation of the experimentally observed additional broadening of the erbium photoluminescence band (0.8 eV) with increasing characteristic size of the silicon nanocrystals.
Abstract Er implanted Si is a candidate for quantum and photonic applications; however, several different Er centres are generated, and their symmetry, energy level structure, magnetic and optical properties, and mutual interactions have been poorly understood, which has been a major barrier to the development of these applications. Optically modulated magnetic resonance (OMMR) gives a spectrum of the modulation of an electron paramagnetic resonance (EPR) signal by a tuneable optical field. Our OMMR spectrum of Er implanted Si agrees with three independent measurements, showing that we have made the first measurement of the crystal field splitting of the 4I13/2 manifold of Er implanted Si, and allows us to revise the crystal field splitting of the 4I15/2 manifold. This splitting originates from a photoluminescence (PL) active O coordinated Er centre with orthorhombic C2v symmetry, which neighbours an EPR active O coordinated Er centre with monoclinic C1h symmetry. This pair of centres could form the basis of a controlled NOT (CNOT) gate.
Erbium ions in crystals show considerable promise for the technologies that will form the backbone of future networked quantum information technology. Despite advances in leveraging erbium’s fibre-compatible infrared transition for classical and quantum applications, the transitions are, in general, not well understood. We present detailed absorption and laser site-selective spectroscopy of the C 3v (O 2 − ) centre in CaF 2 :Er 3 + as an interesting erbium site case study. The 4 I 15 / 2 Z 1 → 4 I 13 / 2 Y 1 transition has a low-temperature inhomogeneous linewidth of 1 GHz with hyperfine structure observable from the 167 Er isotope. A parametrized crystal-field Hamiltonian is fitted to 34 energy levels and the two ground state magnetic splitting factors. The wavefunctions are used to perform a transition intensity analysis and electric-dipole parameters are fitted to absorption oscillator strengths. Simulated spectra for the 4 I 11 / 2 → 4 I 15 / 2 and 4 I 13 / 2 → 4 I 15 / 2 inter-multiplet transitions are in excellent agreement with the experimentally measured spectra. The 4 I 13 / 2 excited state lifetime is 25.0 ms and the intensity calculation is in excellent agreement with this value. • Detailed spectroscopic study of the C 3v (O 2 − ) Centre in CaF 2 :Er 3 + . • Crystal-field fit to 34 energy levels and ground-state magnetic splitting. • Transition intensity analysis for the technologically relevant infrared transitions.
implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold. We find that both Dy and Tm ions are in a Si substitution site with local tetragonal symmetry. Knowledge of rare-earth ion symmetry is important in maximising the number of optically active centres and for quantum technology applications where local symmetry can be used to control decoherence.