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Pulsed electron transition measurements in a silicon double quantum dot.

Khoi Thi Nguyen, Michael P Lilly, Malcolm S. Carroll, N. Tobias Jacobson, Wayne M. Witzel, Nathaniel C. Bishop, Lisa A Tracy, Stephen M Carr, Tzu‐Ming Lu, Joel R. Wendt, Jeffrey O. Stevens, Robert K. Grubbs, Tammy C. Pluym, Jason Dominguez, Richard P. Muller

Published Jul 1, 2012• 0 citations
OpenAlex

Abstract

Semiconductor double quantum dots Measurement techniques Charge sensingThe charge occupaHon of the double dot is measured using a differenHal technique.The signal indicates a change in DQD occupaHon.

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