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arXiv:cond-mat/0412048 · Physical Review B

Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot

J. R. Petta, Alex C. Johnson, Amir Yacoby, Charles M. Marcus, Micah P. Hanson, Arthur C. Gossard

Published Oct 5, 2005• 74 citations
arXivHTMLPDF

Abstract

A pulsed-gate technique with charge sensing is used to measure the singlet-triplet relaxation time for nearly degenerate spin states in a two-electron double quantum dot. Transitions from the (1,1) charge occupancy state to the (0,2) state, measured as a function of pulse cycle duration and magnetic field, allow the (1,1) singlet-triplet relaxation time $(\ensuremath{\geqslant}70\phantom{\rule{0.3em}{0ex}}\ensuremath{\mu}\mathrm{s})$ and the (0,2) singlet-triplet splitting to be measured. This technique can be readily applied to read out a spin-qubit operating in a singlet-triplet basis.

DOI
10.1103/physrevb.72.161301

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In double quantum dot singlet–triplet qubits, the exchange interaction is used in both quantum gate operation and the measurement of the state of the qubit. The exchange can be controlled electronically by applying gate voltage pulses. We simulate the exchange induced charge state transitions in one and two singlet–triplet qubit systems using the exact diagonalization method. We find that fast detuning pulses may result in leakage between different singlet charge states. The leakage could cause measurement errors and hinder quantum gate operation for example in the case of the two-qubit Coulomb gate.
We study theoretically phonon-induced spin dynamics of two electrons confined in a self-assembled double quantum dot. We calculate the transition rates and time evolution of occupations for the spin-triplet and spin-singlet states. We characterize the relative importance of various relaxation channels, including two-phonon processes, as a function of the electric and magnetic fields. The simulations are based on a model combining the eight-band [Formula: see text] method and configuration-interaction approach. We show that the electron g-factor mismatch between the Zeeman doublets localized on different dots opens a relatively fast triplet-singlet phonon-assisted relaxation channel. We also demonstrate, that the relaxation near the triplet-singlet anticrossing is slowed down up to several orders of magnitude due to vanishing of some relaxation channels.
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Gate-defined semiconductor quantum dots utilize fast electrical control to manipulate spin and charge states of individual electrons. Electrical pulse distortions can limit control fidelities but are difficult to measure at the device level. Here, we use detuning-axis pulsed spectroscopy to characterize baseband pulse distortions in a silicon double quantum-dot. We extract the gate-voltage impulse response and apply a digital pre-distortion filter to eliminate pulse distortions on timescales longer than 1~ns. With the pre-distortion, we reduce the frequency chirp of coherent exchange oscillations in a singlet-triplet qubit. Our results suggest a scalable and tuning-efficient method for characterizing pulse distortions in quantum-dot spin qubits.