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CRC Press eBooks

NbN Superconducting Devices

Masahiro Aoyagi

Published Aug 24, 2000• 0 citations
Publisher
DOI
10.1201/9780203908181.ch12

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In this paper, the superconducting NbN hot electron bolometer terahertz detector with an Nb5N6buffer layer was fabricated on the Si substrate. The Nb5N6buffer layer can significantly improve the superconductivity of ultra-thin NbN films. Preliminary results show that with a 30-nm-thick buffer, the zero resistance superconducting transition temperature of a 6-nm-thick NbN film device is 12.6 K, and the superconducting critical current of the device is increased by four times. The noise temperature, IF bandwidth and direct detection sensitivity of the device will be further characterized in following experiments.
Superconducting niobium nitride (NbN) continues to be investigated decades on, largely in part to its advantageous superconducting properties and wide use in superconducting electronics. Particularly, NbN-based superconducting nanowire single-photon detectors (SNSPDs) have shown exceptional performance and NbN remains as the material of choice in developing future generation quantum devices. In this perspective, we describe the processing-structure-property relationships governing the superconducting properties of NbN films. We further discuss the complex interplay between the material properties, processing parameters, substrate materials, device architectures, and performance of SNSPDs. We also highlight the latest progress in optimizing SNSPD performance parameters.