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Quantum Electronics and Laser Science Conference

Measurement of photon echoes at 1.5 µm in Er 3 +:Y 2 Si0 5 using a diode laser and amplifier

R. M. Macfarlane, Todd L. Harris, Yeoh Teik San, R. L. Cone, Randy W. Equall

Published May 18, 1997• 0 citations
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Abstract

Coherent transient phenomena, particularly photon echoes, provide fundamental information on structure and dynamics of solids and provide the mechanism for time domain optical storage, signal routing, and processing.1 For these applications, materials are needed in the 1.5-μm telecommunications window, and erbium-doped crystals using the 4I15/2(1) → 4I13/2(1) transition are one important class of such materials.

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LASER FREQUENCY STABILIZATION TO SPECTRAL HOLE BURNING FREQUENCY REFERENCES IN ERBIUM-DOPED CRYSTALS: MATERIAL AND DEVICE OPTIMIZATION

Thomas Böttger

Narrow spectral holes in the absorption lines of Er doped crystals have been explored as references for frequency stabilizing external cavity diode lasers at the important 1.5 μm optical communication wavelength. Allan deviations of the beat signal between two independent stabilized lasers as low as 200 Hz over 10 ms integration time have been achieved using regenerative spectral holes in Er:Y2SiO5 and Er:KTP, while drift was reduced to ~ 7 kHz/min by incorporating the inhomogeneous absorption line as a fixed reference. During active stabilization, the transient spectral hole was continuously regenerated as hole burning balanced relaxation. In contrast, persistent spectral holes in Er:D:CaF2, with lifetimes of several weeks, provided programmable and transportable secondary frequency references that maintained sub-kilohertz stability over several seconds and enabled 6 kHz stability over 3 1.6 10 s × . The error signal was derived from the spectral hole transmission using frequency modulation spectroscopy. A servo amplifier applied fast frequency corrections to the injection current of the laser diode and slower adjustments to the piezo-driven feedback prism plate. These stabilized lasers provide ideal sources for spectral hole burning applications based on optical coherent transients, where laser stability is required over the storage time of the material. Since the lifetime of the frequency reference is exactly the material storage time, this requirement is automatically met by using our technique. This was demonstrated in Er:Y2SiO5 and successfully transferred to high-bandwidth signal processing applications. The material Er:Y2SiO5 was optimized for these applications. The I15/2 and I13/2 crystal field levels were site-selectively determined by absorption and fluorescence spectroscopy. The excited state lifetime was measured to be 11.4 ms for site 1 and 9.2 ms for site 2. Zeeman experiments and two-pulse photon echo spectroscopy as a function of magnetic field orientation were used to determine the anisotropic electronic g-values for both Er sites and established a preferred magnetic field orientation for minimizing homogeneous line broadening by spectral diffusion. The spectral diffusion was characterized by stimulated photon echo spectroscopy and successfully described with established theories. In a 0.02 atomic percent Er:Y2SiO5 crystal at B = 0.8 T and T = 1.6 K, line broadening became significant after 10 μs, increasing the homogeneous linewidth from 7.5 kHz to 75 kHz after 120 μs. Spectral diffusion, primarily caused by direct phonon driven Er spin-flips in the ground state, can be controlled to negligible levels with proper magnetic field strength and orientation, temperature, and erbium concentration. In optimizing Er:Y2SiO5, the narrowest optical resonance in any solid-state material of 73 Hz was measured.

•Jan 1, 2002•15 citations

Measurement of photon echoes in Er:Y_2SiO_5 at 15 µm with a diode laser and an amplifier

R. M. Macfarlane, Todd L. Harris, Y. Sun +2 more

We have measured the optical dephasing time of Er(3+) transitions near 1.5 microm in the two crystallographically inequivalent sites of Y(2)SiO(5), using an external-cavity diode laser amplified by an erbium-doped fiber amplifier. Two-pulse photon echoes were observed at zero field and in magnetic fields up to 55kG, with dephasing times as long as 580 micros (corresponding to a linewidth of 550 Hz). Stimulated echoes were also measured and showed evidence of spectral diffusion during the 13-ms lifetime of the (4)I(13/2) level.

Optics Letters•Jun 15, 1997•63 citations
Coherent transient phenomena, particularly photon echoes, provide fundamental information on structure and dynamics of solids and provide the mechanism for time domain optical storage, signal routing, and processing.1 For these applications, materials are needed in the 1.5-μm telecommunications window, and erbium-doped crystals using the 4I15/2(1) → 4I13/2(1) transition are one important class of such materials.
Narrow spectral holes in the absorption lines of Er doped crystals have been explored as references for frequency stabilizing external cavity diode lasers at the important 1.5 μm optical communication wavelength. Allan deviations of the beat signal between two independent stabilized lasers as low as 200 Hz over 10 ms integration time have been achieved using regenerative spectral holes in Er:Y2SiO5 and Er:KTP, while drift was reduced to ~ 7 kHz/min by incorporating the inhomogeneous absorption line as a fixed reference. During active stabilization, the transient spectral hole was continuously regenerated as hole burning balanced relaxation. In contrast, persistent spectral holes in Er:D:CaF2, with lifetimes of several weeks, provided programmable and transportable secondary frequency references that maintained sub-kilohertz stability over several seconds and enabled 6 kHz stability over 3 1.6 10 s × . The error signal was derived from the spectral hole transmission using frequency modulation spectroscopy. A servo amplifier applied fast frequency corrections to the injection current of the laser diode and slower adjustments to the piezo-driven feedback prism plate. These stabilized lasers provide ideal sources for spectral hole burning applications based on optical coherent transients, where laser stability is required over the storage time of the material. Since the lifetime of the frequency reference is exactly the material storage time, this requirement is automatically met by using our technique. This was demonstrated in Er:Y2SiO5 and successfully transferred to high-bandwidth signal processing applications. The material Er:Y2SiO5 was optimized for these applications. The I15/2 and I13/2 crystal field levels were site-selectively determined by absorption and fluorescence spectroscopy. The excited state lifetime was measured to be 11.4 ms for site 1 and 9.2 ms for site 2. Zeeman experiments and two-pulse photon echo spectroscopy as a function of magnetic field orientation were used to determine the anisotropic electronic g-values for both Er sites and established a preferred magnetic field orientation for minimizing homogeneous line broadening by spectral diffusion. The spectral diffusion was characterized by stimulated photon echo spectroscopy and successfully described with established theories. In a 0.02 atomic percent Er:Y2SiO5 crystal at B = 0.8 T and T = 1.6 K, line broadening became significant after 10 μs, increasing the homogeneous linewidth from 7.5 kHz to 75 kHz after 120 μs. Spectral diffusion, primarily caused by direct phonon driven Er spin-flips in the ground state, can be controlled to negligible levels with proper magnetic field strength and orientation, temperature, and erbium concentration. In optimizing Er:Y2SiO5, the narrowest optical resonance in any solid-state material of 73 Hz was measured.
We have measured the optical dephasing time of Er(3+) transitions near 1.5 microm in the two crystallographically inequivalent sites of Y(2)SiO(5), using an external-cavity diode laser amplified by an erbium-doped fiber amplifier. Two-pulse photon echoes were observed at zero field and in magnetic fields up to 55kG, with dephasing times as long as 580 micros (corresponding to a linewidth of 550 Hz). Stimulated echoes were also measured and showed evidence of spectral diffusion during the 13-ms lifetime of the (4)I(13/2) level.