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Quantum Electronics and Laser Science Conference

Measurement Of Photon Echoes At 1.5 /spl mu/m In Er/sup3/+Y/sub2/SiO/sub5/ Using A Diode Laser And Amplifier

MacFarlane, Harris, Sun, Equall

Published Jan 1, 1997• 0 citations
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Measurement Of Photon Echoes At 1.5 /spl mu/m In Er/sup3/+Y/sub2/SiO/sub5/ Using A Diode Laser And Amplifier

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We have measured the optical dephasing time of Er(3+) transitions near 1.5 microm in the two crystallographically inequivalent sites of Y(2)SiO(5), using an external-cavity diode laser amplified by an erbium-doped fiber amplifier. Two-pulse photon echoes were observed at zero field and in magnetic fields up to 55kG, with dephasing times as long as 580 micros (corresponding to a linewidth of 550 Hz). Stimulated echoes were also measured and showed evidence of spectral diffusion during the 13-ms lifetime of the (4)I(13/2) level.

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Coherent transient phenomena, particularly photon echoes, provide fundamental information on structure and dynamics of solids and provide the mechanism for time domain optical storage, signal routing, and processing.1 For these applications, materials are needed in the 1.5-μm telecommunications window, and erbium-doped crystals using the 4I15/2(1) → 4I13/2(1) transition are one important class of such materials.

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We have measured the optical dephasing time of Er(3+) transitions near 1.5 microm in the two crystallographically inequivalent sites of Y(2)SiO(5), using an external-cavity diode laser amplified by an erbium-doped fiber amplifier. Two-pulse photon echoes were observed at zero field and in magnetic fields up to 55kG, with dephasing times as long as 580 micros (corresponding to a linewidth of 550 Hz). Stimulated echoes were also measured and showed evidence of spectral diffusion during the 13-ms lifetime of the (4)I(13/2) level.