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Laser Physics Letters

Realization of all-optical switch and diode via Raman gain process using a Kerr field

Muqaddar Abbas, Sajid Qamar, Shahid Qamar

Published Jul 8, 2016• 0 citations
Publisher

Abstract

Abstract The idea of optical photonic crystal, which is generated using two counter-propagating fields, is revisited to study gain-assisted all-optical switch and diode using Kerr field. Two counter-propagating fields with relative detuning Δ ν generate standing-wave field pattern which interacts with a four-level atomic system. The standing-wave field pattern acts like a static photonic crystal for Δ ν = 0 , however, it behaves as a moving photonic crystal for Δ ν ≠ 0 . The reflection and transmission coefficients are calculated for the case when a weak incident probe pulse propagates through the system. For static photonic crystal, the system acts like an all optical transistor—as a switch—via control of the external Kerr field, such that, when the Kerr field is off (on) the switch is ON (OFF) . However, for a moving photonic crystal, the system acts as an all-optical diode via control of the external Kerr field. The advantage of using the gain-assisted model is the fact that the transmission efficiency is high, i.e. almost 100 % .

DOI
10.1088/1612-2011/13/8/085204

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Abstract The idea of optical photonic crystal, which is generated using two counter-propagating fields, is revisited to study gain-assisted all-optical switch and diode using Kerr field. Two counter-propagating fields with relative detuning Δ ν generate standing-wave field pattern which interacts with a four-level atomic system. The standing-wave field pattern acts like a static photonic crystal for Δ ν = 0 , however, it behaves as a moving photonic crystal for Δ ν ≠ 0 . The reflection and transmission coefficients are calculated for the case when a weak incident probe pulse propagates through the system. For static photonic crystal, the system acts like an all optical transistor—as a switch—via control of the external Kerr field, such that, when the Kerr field is off (on) the switch is ON (OFF) . However, for a moving photonic crystal, the system acts as an all-optical diode via control of the external Kerr field. The advantage of using the gain-assisted model is the fact that the transmission efficiency is high, i.e. almost 100 % .
We propose a design of an all-optical transistor based on a one-dimensional photonic-crystal cavity doped with a four-level N\mathsf{N}N-type active Raman gain medium. The calculated results show that in a photonic-crystal cavity of this kind transmission and reflection of the probe (Raman) beam are strongly dependent on the optical switching power. Transmission and reflection of the probe beam can be greatly amplified or attenuated. Therefore the optical switching field can serve as a gate field of the transistor to effectively control propagation of the weak probe field. It is shown that the group velocity of the probe pulse can be controlled in the range from subluminal (slow light) to superluminal (fast light).
Optical diodes controlling the flow of light are of principal significance for optical information processing. They transmit light from an input to an output, but not in the reverse direction. This breaking of time reversal symmetry is conventionally achieved via Faraday or nonlinear effects. For applications in a quantum network, features such as the abilities of all-optical control, on-chip integration, and single-photon operation are important. Here we propose an all-optical optical diode which requires neither magnetic fields nor strong input fields. It is based on a "moving" photonic crystal generated in a three-level electromagnetically induced transparency medium in which the refractive index of a weak probe is modulated by the moving periodic intensity of a strong standing coupling field with two detuned counterpropagating components. Because of the Doppler effect, the frequency range of the crystal's band gap for the probe copropagating with the moving crystal is shifted from that for the counterpropagating probe. This mechanism is experimentally demonstrated in a room temperature Cs vapor cell.
With two sets of standing-wave fields built in a thermal rubidium vapor cell, we have established a controllable photonic crystal with periodic gain in a coherently prepared N-type four-level atomic configuration. First, the photonic lattice constructed by a resonant standing-wave coupling field results in a spatially modulated susceptibility and makes the signal field diffract in a discrete manner under the condition of electromagnetically induced transparency. Then, with the addition of the standing-wave pump field, the N-type atomic medium can induce a periodic Raman gain on the signal field, which can be effectively controlled by tuning the pertinent atomic parameters. The experimental demonstration of such a real-time reconfigurable photonic crystal structure with periodic Raman gain can pave the way for realizing desired applications predicted in the gain-modulated periodic optical systems.
Abstract We study light-pulse propagation in a dynamically controllable periodic structure (grating) resulting from Raman interaction of a weak probe pulse with a standing-wave pump and a second control laser field in N-type four-level atomic media. The grating is induced due to periodic spatial modulation of the Raman gain in a standing pump field (Raman gain grating). We show that it is possible to control both the probe pulse amplitude and the group velocity of the pulse from subluminal to superluminal by varying the pump or control field. Such a grating is of interest for all-optical switches and transistors.
We study the transmission spectra of a one-dimensional photonic crystal with a defect containing a four-level atomic medium that exhibits a greatly enhanced third-order susceptibility while having a vanishing linear susceptibility dependent on the electromagnetically induced transparency. Two ways of controlling the transmission of a photonic crystal are discussed: via absorption, i.e., nonlinear (two-photon) absorption of the probe field enhanced by constructive quantum interference, and via dispersion, which comes down to shifting the resonance frequency of the defect mode for the probe field by varying the refractive index based on the giant Kerr nonlinearity (cross-phase modulation). We demonstrate that such systems enable nonlinear all-optical switching at ultralow intensities of the coupling and switching laser fields.
In the photonic spin Hall effect (SHE), also known as the transverse shift, incident light photons with opposite spins are spatially separated in the transverse direction due to the spin-orbit interaction of light. Here, we propose a gain-assisted model to control the SHE in the reflected probe light. In this model, a probe light is incident on a cavity containing a three-level dilute gaseous atomic medium, where the interaction between the atom and the control field follows two-photon Raman transitions. We show that the direction of photonic spin accumulations can be switched between positive and negative values across the Brewster angle in both the anomalous and normal dispersion regimes. For the same magnitude of control fields, the peak value of the photonic SHE is higher in the anomalous dispersion region compared to the normal dispersion regime. Additionally, the angular range around the Brewster angle is wider in the normal dispersion regime than in the anomalous dispersion region. Furthermore, the peak value of the photonic SHE and the angular range can be controlled by changing the Rabi frequencies of the control fields and the probe field detuning. The measurement of photonic SHE based on gain assistance may enable spin-related applications such as optical sensing.