Conference on Lasers and Electro-Optics

Modeling of optical bistability in reflection in GaAs/AlGaAs Fabry-Perot etalons including diffraction, carrier, and heat diffusion

Ulf Olin, Olof Dahlen

Published Apr 24, 1989• 0 citations

Abstract

There is an increasing interest in all-epitaxial Fabry-Perot etalons for optical bistability1,2 and optical logic gates.3 To model these devices theoretically, the wave equation, carrier diffusion equation, and heat conduction equation must be solved self-consistently for the layered structure. To investigate the effects of small spot sizes, the wave equation must include diffraction, whereas for the heat conduction equation both longitudinal (perpendicular to the layers) as well as transverse (parallel to the layers) heat conduction must be taken into account.

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