Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Optics Letters

Theory for the temperature rise in optically bistable GaAs/AlGaAs étalons including diffraction, heat conduction, and carrier diffusion

Ulf Olin, Olof Sahlén

Published Jun 1, 1989• 2 citations
Publisher

Abstract

We report on a realistic model for optically bistable GaAs/AlGaAs Fabry-Perot étalons. The model incorporates diffraction, carrier diffusion, and heat conduction, taking all the layers of the structure into account. For the optical nonlinearity the carrier density and temperature-dependent plasma theory is used. Devices with less than a 1-K temperature rise should be possible to design.

DOI
10.1364/ol.14.000566

Related papers

Model for optical bistability in GaAs/AlGaAs Fabry–Perot étalons including diffraction, carrier diffusion, and heat conduction

Ulf Olin

A new model for optical bistability in layered semiconductor Fabry–Perot étalons is presented. The model accounts for diffraction, carrier diffusion, and thermal conduction. Assuming that the spot size and the thickness of the nonlinear layer are smaller than the diffusion length of the carriers, a simplified model is derived that has been used to design bistable AlGaAs étalons with improved thermal properties.

Journal of the Optical Society of America B•Jan 1, 1990•14 citations

Modeling of optical bistability in reflection in GaAs/AlGaAs Fabry-Perot etalons including diffraction, carrier, and heat diffusion

Ulf Olin, Olof Dahlen

There is an increasing interest in all-epitaxial Fabry-Perot etalons for optical bistability1,2 and optical logic gates.3 To model these devices theoretically, the wave equation, carrier diffusion equation, and heat conduction equation must be solved self-consistently for the layered structure. To investigate the effects of small spot sizes, the wave equation must include diffraction, whereas for the heat conduction equation both longitudinal (perpendicular to the layers) as well as transverse (parallel to the layers) heat conduction must be taken into account.

Conference on Lasers and Electro-Optics•Apr 24, 1989•0 citations

Optical Bistability, Logic Gating, and Waveguide Operation in Semiconductor Etalons

Warren S. Warren, Koch, Gibbs

This article describes the application of one type of optical bistable device based on gallium arsenide as the nonlinear medium. The authors discuss several possible operations with GaAs nonlinear Fabry-Perot etalons. This article utilizes a recently developed computer model to illustrate the basic operating principles and applications. The authors mainly concentrate on the device operation itself. In keeping with common practice they use the term optical bistable device when referring to a device that can exhibit optical bistability even when not being used in such a manner. Instead of the expression nonlinear Fabry-Perot etalon, they often use nonlinear etalons or etalon devices.

Computer•Dec 1, 1987•14 citations

Design and Investigation of a Nonlinear Fabry-Perot Device with Gaas Spacer Layer

B. Acklin, C. Bagnoud, M.‐A. Dupertuis

A bistable etalon, consisting of an optically nonlinear semiconductor spacer layer sandwiched between two Bragg mirrors, has been optimized for use in reflection, using a numerical model for a self-consistent carrier density based on published experimental data for the nonlinear absorption alpha(I,lambda) and refraction DELTA-n(I,lambda). The saturation behavior of the refractive index and the absorption in bulk GaAs has been investigated at different wavelengths. High saturation values of DELTA-n(s) almost-equal-to .080 were found 20 meV below the gap. 30 meV above the gap we observed a comparable index change, together with an absorption saturation feature, leading to a highly nonlinear response close to the bistability threshold in our unoptimized etalon.

Annales de Physique•Jan 1, 1991•1 citation

Effects of diffraction and diffusion in dispersive optical bistability in Fabry–Perot étalons

Ulf Olin

Transverse effects in optical bistability, when both diffraction and diffusion are taken into account, have been studied. A numerical method is presented, as well as results for dispersive optical bistability in Fabry–Perot resonators for different diffusion lengths. It is shown that for small spot sizes, diffraction considerably influences the transmission characteristics and hysteresis disappears when diffusion is present.

Journal of the Optical Society of America B•Jan 1, 1988•11 citations

True-CW operation of GaAs bistable etalon with electronic optical nonlinearity

Dominic J. Goodwill, Andy C. Walker, A.H. Kean +1 more

An all-epitaxial GaAs/GaAlAs optically bistable Fabry-Perot etalon, designed to maximise the band-edge resonant electronic nonlinearity relative to unwanted thermal effects, has been demonstrated to be capable of being held CW in either of the bistable states. Switch times of <40 ns were recorded together with a critical switch power of <700 μW.

Electronics Letters•Aug 13, 1992•3 citations
We report on a realistic model for optically bistable GaAs/AlGaAs Fabry-Perot étalons. The model incorporates diffraction, carrier diffusion, and heat conduction, taking all the layers of the structure into account. For the optical nonlinearity the carrier density and temperature-dependent plasma theory is used. Devices with less than a 1-K temperature rise should be possible to design.
There is an increasing interest in all-epitaxial Fabry-Perot etalons for optical bistability1,2 and optical logic gates.3 To model these devices theoretically, the wave equation, carrier diffusion equation, and heat conduction equation must be solved self-consistently for the layered structure. To investigate the effects of small spot sizes, the wave equation must include diffraction, whereas for the heat conduction equation both longitudinal (perpendicular to the layers) as well as transverse (parallel to the layers) heat conduction must be taken into account.
This article describes the application of one type of optical bistable device based on gallium arsenide as the nonlinear medium. The authors discuss several possible operations with GaAs nonlinear Fabry-Perot etalons. This article utilizes a recently developed computer model to illustrate the basic operating principles and applications. The authors mainly concentrate on the device operation itself. In keeping with common practice they use the term optical bistable device when referring to a device that can exhibit optical bistability even when not being used in such a manner. Instead of the expression nonlinear Fabry-Perot etalon, they often use nonlinear etalons or etalon devices.
A bistable etalon, consisting of an optically nonlinear semiconductor spacer layer sandwiched between two Bragg mirrors, has been optimized for use in reflection, using a numerical model for a self-consistent carrier density based on published experimental data for the nonlinear absorption alpha(I,lambda) and refraction DELTA-n(I,lambda). The saturation behavior of the refractive index and the absorption in bulk GaAs has been investigated at different wavelengths. High saturation values of DELTA-n(s) almost-equal-to .080 were found 20 meV below the gap. 30 meV above the gap we observed a comparable index change, together with an absorption saturation feature, leading to a highly nonlinear response close to the bistability threshold in our unoptimized etalon.