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Journal of the Optical Society of America B

Model for optical bistability in GaAs/AlGaAs Fabry–Perot étalons including diffraction, carrier diffusion, and heat conduction

Ulf Olin

Published Jan 1, 1990• 14 citations
Publisher

Abstract

A new model for optical bistability in layered semiconductor Fabry–Perot étalons is presented. The model accounts for diffraction, carrier diffusion, and thermal conduction. Assuming that the spot size and the thickness of the nonlinear layer are smaller than the diffusion length of the carriers, a simplified model is derived that has been used to design bistable AlGaAs étalons with improved thermal properties.

DOI
10.1364/josab.7.000035

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A new model for optical bistability in layered semiconductor Fabry–Perot étalons is presented. The model accounts for diffraction, carrier diffusion, and thermal conduction. Assuming that the spot size and the thickness of the nonlinear layer are smaller than the diffusion length of the carriers, a simplified model is derived that has been used to design bistable AlGaAs étalons with improved thermal properties.
There is an increasing interest in all-epitaxial Fabry-Perot etalons for optical bistability1,2 and optical logic gates.3 To model these devices theoretically, the wave equation, carrier diffusion equation, and heat conduction equation must be solved self-consistently for the layered structure. To investigate the effects of small spot sizes, the wave equation must include diffraction, whereas for the heat conduction equation both longitudinal (perpendicular to the layers) as well as transverse (parallel to the layers) heat conduction must be taken into account.
A theoretical demonstration of optical bistability in periodic layered media, particularly in long-period GaAs/AlAs superlattices is presented. The proposed structure consists of a periodic multilayer system, as opposed to previously demonstrated nonlinear bistable devices which employed Fabry-Perot etalons. The optical resonance effect which is essential for bistable devices is, in this case, induced by a refractive index modulation. The nonlinear active medium is distributed in the whole structure rather than placed between the two mirrors of a Fabry-Perot cavity. It is shown by a complete calculation of wave propagation in the periodic nonlinear medium that a multiple valued feature appears in the structure's nonlinear reflectivity spectrum. The input/output characteristics of the structure exhibit bistable hysteresis similar to that of a nonlinear Fabry-Perot etalon.>
This article describes the application of one type of optical bistable device based on gallium arsenide as the nonlinear medium. The authors discuss several possible operations with GaAs nonlinear Fabry-Perot etalons. This article utilizes a recently developed computer model to illustrate the basic operating principles and applications. The authors mainly concentrate on the device operation itself. In keeping with common practice they use the term optical bistable device when referring to a device that can exhibit optical bistability even when not being used in such a manner. Instead of the expression nonlinear Fabry-Perot etalon, they often use nonlinear etalons or etalon devices.