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中国物理B：英文版

Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting

王义林, 黄理, 杜亮, Xi Dai

Published Jan 1, 2016• 0 citations
OpenAlex

Abstract

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting ?. We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.

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We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting ?. We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.
We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting Δ . We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.
We investigate the effects of crystal field splitting in a doped two-band Hubbard model with different bandwidths within dynamical mean-field theory (DMFT), using a quantum Monte Carlo impurity solver. In addition to an orbital-selective Mott phase (OSMP) of the narrow band, which is adiabatically connected with the well-studied OSMP in the half-filled case without crystal field splitting, we find, for sufficiently strong interaction and a suitable crystal field, also an OSMP of the wide band. We establish the phase diagram (in the absence of magnetic or orbital order) at moderate doping as a function of interaction strength and crystal field splitting and show that also the wide-band OSMP is associated with non-Fermi-liquid behavior in the case of Ising-type Hund rule couplings. Our numerical results are supplemented by analytical strong-coupling studies of spin order and spectral functions at integer filling.
We extend previous studies on orbital-selective Mott transitions in the paramagnetic state of the half-filled degenerate two-band Hubbard model to the general doped case, using a high-precision quantum Monte Carlo dynamical mean-field theory solver. For sufficiently strong interactions, orbital-selective Mott transitions as a function of total band filling are clearly visible in the band-specific fillings, quasiparticle weights, double occupancies, and spectra. The results are contrasted with those of single-band models for similar correlation strengths.
We study the Mott transition in the three-orbital Hubbard model. To investigate how the orbital level splitting and the Ising-type Hund's coupling affect the Mott transition in the case of two electrons per site, we use the dynamical mean-field theory combined with continuous-time quantum Monte Carlo simulations. The calculation of the double occupancy reveals that the critical interaction strength separating a metallic phase and two kinds of insulating phases shows a nonmonotonic behavior as a function of the level splitting. We find that this behavior is characteristic for 1/31/31/3 filling, in comparison with the preceding results for different fillings and for two-orbital models. Strong competition between the two insulators results in an intriguing first-order transition to an insulating phase having intermediate characters between Mott and band insulators. It is also found that the two insulators show different behaviors in the phase boundary with the metallic phase in the interaction-temperature plane, which is reflected in a difference in the quasiparticle behavior around the transition. We also discuss the orbital selective Mott transition for larger Hund's coupling, which is compared with previous study at zero temperature.
A powerful diagrammatic impurity solver is shown to permit a systematic study of the doping-driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean-field theory. At small dopings and large interaction strengths, we are able to access low enough temperatures that a reliable extrapolation to temperature T=0T=0T=0 may be performed, and ground state energies of insulating and metallic states may be compared. We find that the T=0T=0T=0 doping-driven transition is of second order and is characterized by an interaction-strength dependent electronic compressibility, which vanishes at the critical interaction strength of the half filled model. Over wide parameter ranges, the compressibility is substantially reduced relative to the noninteracting system. The metal-insulator transition is characterized by the appearance of in-gap states, but these are relevant only for very low dopings of less than 3%.