Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Journal of Physics Conference Series

Mott Transitions in Three-Orbital Hubbard Model at Fractional Band Filling

Tomoko Kita, Takuma Ohashi, Norio Kawakami

Published Dec 14, 2012• 0 citations
Publisher

Abstract

We investigate the Mott transitions in the three-orbital Hubbard model by means of the dynamical mean field theory with continuous-time quantum Monte Carlo simulations. We obtain the phase diagram determined in the orbital level splitting versus Hubbard interaction plane in the case of two electrons per site. It is also found that the introduction of holes into the orbital selective Mott insulating phase induces the metallic state with heavy quasiparticles.

DOI
10.1088/1742-6596/391/1/012157

Related papers

Mott transition in three-orbital Hubbard model with orbital splitting

Tomoko Kita, Takuma Ohashi, Norio Kawakami

We study the Mott transition in the three-orbital Hubbard model. To investigate how the orbital level splitting and the Ising-type Hund's coupling affect the Mott transition in the case of two electrons per site, we use the dynamical mean-field theory combined with continuous-time quantum Monte Carlo simulations. The calculation of the double occupancy reveals that the critical interaction strength separating a metallic phase and two kinds of insulating phases shows a nonmonotonic behavior as a function of the level splitting. We find that this behavior is characteristic for $1/3$ filling, in comparison with the preceding results for different fillings and for two-orbital models. Strong competition between the two insulators results in an intriguing first-order transition to an insulating phase having intermediate characters between Mott and band insulators. It is also found that the two insulators show different behaviors in the phase boundary with the metallic phase in the interaction-temperature plane, which is reflected in a difference in the quasiparticle behavior around the transition. We also discuss the orbital selective Mott transition for larger Hund's coupling, which is compared with previous study at zero temperature.

Physical Review B•Nov 28, 2011•26 citations

Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting

王义林, 黄理, 杜亮 +1 more

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting ?. We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.

中国物理B：英文版•Jan 1, 2016•0 citations

Doping-driven orbital-selective Mott transition in multi-band Hubbard models with crystal field splitting

Yilin Wang, Li Huang, Liang Du +1 more

We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting Δ . We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.

arXiv:1512.00275•Chinese Physics B•Mar 1, 2016•8 citations

Orbital-selective Mott transitions in a doped two-band Hubbard model

Eberhard Jakobi, Nils Blümer, P. G. J. van Dongen

We extend previous studies on orbital-selective Mott transitions in the paramagnetic state of the half-filled degenerate two-band Hubbard model to the general doped case, using a high-precision quantum Monte Carlo dynamical mean-field theory solver. For sufficiently strong interactions, orbital-selective Mott transitions as a function of total band filling are clearly visible in the band-specific fillings, quasiparticle weights, double occupancies, and spectra. The results are contrasted with those of single-band models for similar correlation strengths.

arXiv:0906.2966•Physical Review B•Sep 9, 2009•28 citations

Orbital-selective Mott transitions in a doped two-band Hubbard model with crystal field splitting

Eberhard Jakobi, Nils Blümer, P. G. J. van Dongen

We investigate the effects of crystal field splitting in a doped two-band Hubbard model with different bandwidths within dynamical mean-field theory (DMFT), using a quantum Monte Carlo impurity solver. In addition to an orbital-selective Mott phase (OSMP) of the narrow band, which is adiabatically connected with the well-studied OSMP in the half-filled case without crystal field splitting, we find, for sufficiently strong interaction and a suitable crystal field, also an OSMP of the wide band. We establish the phase diagram (in the absence of magnetic or orbital order) at moderate doping as a function of interaction strength and crystal field splitting and show that also the wide-band OSMP is associated with non-Fermi-liquid behavior in the case of Ising-type Hund rule couplings. Our numerical results are supplemented by analytical strong-coupling studies of spin order and spectral functions at integer filling.

arXiv:1301.7252•Physical Review B•May 28, 2013•25 citations

Assessing the orbital selective Mott transition with variational wave functions

Luca F. Tocchio, Federico Arrigoni, Sandro Sorella +1 more

We study the Mott metal-insulator transition in the two-band Hubbard model with different hopping amplitudes t1 and t2 for the two orbitals on the two-dimensional square lattice by using non-magnetic variational wave functions, similarly to what has been considered in the limit of infinite dimensions by dynamical mean-field theory. We work out the phase diagram at half filling (i.e. two electrons per site) as a function of R = t2/t1 and the on-site Coulomb repulsion U, for two values of the Hund's coupling J = 0 and J/U = 0.1. Our results are in good agreement with previous dynamical mean-field theory calculations, demonstrating that the non-magnetic phase diagram is only slightly modified from infinite to two spatial dimensions. Three phases are present: a metallic one, for small values of U, where both orbitals are itinerant; a Mott insulator, for large values of U, where both orbitals are localized because of the Coulomb repulsion; and the so-called orbital-selective Mott insulator (OSMI), for small values of R and intermediate Us, where one orbital is localized while the other one is still itinerant. The effect of the Hund's coupling is two-fold: on one side, it favors the full Mott phase over the OSMI; on the other side, it stabilizes the OSMI at larger values of R.

arXiv:1505.07006•Journal of Physics Condensed Matter•Feb 16, 2016•16 citations
We investigate the Mott transitions in the three-orbital Hubbard model by means of the dynamical mean field theory with continuous-time quantum Monte Carlo simulations. We obtain the phase diagram determined in the orbital level splitting versus Hubbard interaction plane in the case of two electrons per site. It is also found that the introduction of holes into the orbital selective Mott insulating phase induces the metallic state with heavy quasiparticles.
We study the Mott transition in the three-orbital Hubbard model. To investigate how the orbital level splitting and the Ising-type Hund's coupling affect the Mott transition in the case of two electrons per site, we use the dynamical mean-field theory combined with continuous-time quantum Monte Carlo simulations. The calculation of the double occupancy reveals that the critical interaction strength separating a metallic phase and two kinds of insulating phases shows a nonmonotonic behavior as a function of the level splitting. We find that this behavior is characteristic for 1/31/31/3 filling, in comparison with the preceding results for different fillings and for two-orbital models. Strong competition between the two insulators results in an intriguing first-order transition to an insulating phase having intermediate characters between Mott and band insulators. It is also found that the two insulators show different behaviors in the phase boundary with the metallic phase in the interaction-temperature plane, which is reflected in a difference in the quasiparticle behavior around the transition. We also discuss the orbital selective Mott transition for larger Hund's coupling, which is compared with previous study at zero temperature.
We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting ?. We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.
We have studied the doping-driven orbital-selective Mott transition in multi-band Hubbard models with equal band width in the presence of crystal field splitting. Crystal field splitting lifts one of the bands while leaving the others degenerate. We use single-site dynamical mean-field theory combined with continuous time quantum Monte Carlo impurity solver to calculate a phase diagram as a function of total electron filling N and crystal field splitting Δ . We find a large region of orbital-selective Mott phase in the phase diagram when the doping is large enough. Further analysis indicates that the large region of orbital-selective Mott phase is driven and stabilized by doping. Such models may account for the orbital-selective Mott transition in some doped realistic strongly correlated materials.
We extend previous studies on orbital-selective Mott transitions in the paramagnetic state of the half-filled degenerate two-band Hubbard model to the general doped case, using a high-precision quantum Monte Carlo dynamical mean-field theory solver. For sufficiently strong interactions, orbital-selective Mott transitions as a function of total band filling are clearly visible in the band-specific fillings, quasiparticle weights, double occupancies, and spectra. The results are contrasted with those of single-band models for similar correlation strengths.
We investigate the effects of crystal field splitting in a doped two-band Hubbard model with different bandwidths within dynamical mean-field theory (DMFT), using a quantum Monte Carlo impurity solver. In addition to an orbital-selective Mott phase (OSMP) of the narrow band, which is adiabatically connected with the well-studied OSMP in the half-filled case without crystal field splitting, we find, for sufficiently strong interaction and a suitable crystal field, also an OSMP of the wide band. We establish the phase diagram (in the absence of magnetic or orbital order) at moderate doping as a function of interaction strength and crystal field splitting and show that also the wide-band OSMP is associated with non-Fermi-liquid behavior in the case of Ising-type Hund rule couplings. Our numerical results are supplemented by analytical strong-coupling studies of spin order and spectral functions at integer filling.
We study the Mott metal-insulator transition in the two-band Hubbard model with different hopping amplitudes t1 and t2 for the two orbitals on the two-dimensional square lattice by using non-magnetic variational wave functions, similarly to what has been considered in the limit of infinite dimensions by dynamical mean-field theory. We work out the phase diagram at half filling (i.e. two electrons per site) as a function of R = t2/t1 and the on-site Coulomb repulsion U, for two values of the Hund's coupling J = 0 and J/U = 0.1. Our results are in good agreement with previous dynamical mean-field theory calculations, demonstrating that the non-magnetic phase diagram is only slightly modified from infinite to two spatial dimensions. Three phases are present: a metallic one, for small values of U, where both orbitals are itinerant; a Mott insulator, for large values of U, where both orbitals are localized because of the Coulomb repulsion; and the so-called orbital-selective Mott insulator (OSMI), for small values of R and intermediate Us, where one orbital is localized while the other one is still itinerant. The effect of the Hund's coupling is two-fold: on one side, it favors the full Mott phase over the OSMI; on the other side, it stabilizes the OSMI at larger values of R.