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Acta Physica Sinica

Rabi flopping in a V-type three-level system with two orthogonal eigenstates

Huijun Zhou, Liu Shao-Ding, Qu‐Quan Wang, Mingsheng Zhan, Qi-Kun Xue, (1)武汉大学物理系,武汉 430072; (2)武汉大学物理系,武汉 430072;中国科学院物理研究所国际量子结构中心,北京 100080; (3)中国科学院武汉物理与数学研究所,武汉 430071; (4)中国科学院物理研究所国际量子结构中心,北京 100080

Published Jan 1, 2005• 2 citations
Publisher

Abstract

The oscillation characteristics of populations in two orthogonal energy substates of semiconductor quantum dots (SQDs) excited by linearly polarized monochromatic pulse field were discussed. With rotatingwave approximation, the nondamped solutions of the dynamic population equations with resonance excitation were deduced. The effective transition dipole moments and effective input pulse area were introduced and their expressions were also given. Theoretical analysis showed that the amplitude and frequency of the population oscillation on the substates can be manipulated by adjusting the original conditions and the polarization angle of excitation field.

DOI
10.7498/aps.54.710

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Acta Physica Sinica•Jan 1, 2006•2 citations
The oscillation characteristics of populations in two orthogonal energy substates of semiconductor quantum dots (SQDs) excited by linearly polarized monochromatic pulse field were discussed. With rotatingwave approximation, the nondamped solutions of the dynamic population equations with resonance excitation were deduced. The effective transition dipole moments and effective input pulse area were introduced and their expressions were also given. Theoretical analysis showed that the amplitude and frequency of the population oscillation on the substates can be manipulated by adjusting the original conditions and the polarization angle of excitation field.
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We study theoretically the quantum dynamics of an electron in the symmetric four-level double-dot structure under the influence of the monochromatic resonant pulse. The probability amplitudes of the eigenstates relevant for the quantum dynamics are found from the solution of the nonstationary Schr\"odinger equation. The first-order correction term to the solution obtained through the rotating-wave approximation is calculated. The three-level double-dot dynamics and the two-level single-dot dynamics, as well as the off-resonant excitation process, are derived from the general formulas for corresponding choices of the pulse and structure parameters. The results obtained may be applied to the solid-state qubit design.
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The decoherence of Rabi oscillation with multi-level processes in semiconductor quantum dots excited by laser pulses is investigated. By using population dynamic equations of multi-level system, the effect of three kinds of multi-level processes on the damping of Rabi oscillation in quantum dots are numerically simulated and discussed. The effect of biexciton can be neglected when the pulse width is larger than 5ps; the population leakage to wetting layer results in the decreasing of the amplitude and average of the population oscillation on the exciton ground state with the increasing of the excitation intensity; the effect of the two kinds of Auger capture processes on the Rabi oscillation and the spectral width of the photoluminescence from the exciton recombination are also discussed.
In a semiconductor quantum dot, the IIx and IIy transitions to the polarization eigenstates, |x> and |y>, naturally form a three-level V-type system. Using low-temperature polarized photoluminescence spectroscopy, we have investigated the exciton dynamics arising under strong laser excitation. We also explicitly solved the density matrix equations for comparison with the experimental data. The polarization of the exciting field controls the coupling between the otherwise orthogonal states. In particular, when the system is initialized into \Y>, a polarization-tailored pulse can swap the population into |x>, and vice versa, effectively operating on the exciton spin.
The statistic characteristics of single photon emission in single semiconductor quantum dot with pulse excitation have been investigated.With rotating-wave approximation,we deduce the dynamics equations including second-order correlation function from the master equations of the populations and discuss the correlation function of photon emission from the exciton combination under different input pulse areas.There will appear an apparant split peak around zero time delay under strong excitation.For short pulse width,the probability of single photon emission p and the efficiency of single photon emission η oscillate as the excitation intensity increases.It is revealed that high efficient single photon emissions can be realized in this system when excited with input pulse area about π and short pulse width.