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Springer proceedings in physics

Instabilities of a Semiconductor with Induced Absorption in a Ring Resonator

Markus Lindberg, S. W. Koch, H. Haug

Published Jan 1, 1986• 1 citation
Publisher
DOI
10.1007/978-3-642-46580-2_88

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Annual Meeting Optical Society of America•Jan 1, 1988•0 citations
By considering a passive ring cavity with linear absorption in the dispersive limit, a unified analysis is presented for tuning-optimized minimum instability thresholds; the treatment is general, allowing consideration of arbitrary material response times, cavity tuning and finesse. In the adiabatic limit (τ → 0) the results reduce to the usual Ikeda map. The case of long medium-response time (τ → ∞) is treated in some detail in the high-finesse limit; these conditions being of particular relevance to semiconductor laser amplifiers. It is found analytically that in the high-finesse limit, both optical bistability and self-pulsing instabilities should exhibit the same low-threshold behaviour. An analytical expression is derived for the ‘instability threshold curve’, A 2 B against B for minimum A 2, in the mapping limit.
The main mechanisms for the observed large optical nonlinearities in semiconductors are briefly discussed and illustrated for the example of the exciton ionization by plasma screening. These nonlinearities cause various types of optical bistability, either of intrinsic nature or evoked by an additional resonator feedback. Under certain operation conditions also higher instabilities such as oscillations and chaos can be obtained. As an example, the self-pulsing of an induced absorber in a ring cavity is treated. The resulting locked oscillations are shown to follow a Farey-tree scenarium.
We investigate the resonance fluorescence spectrum of a bulk semiconductor subject to an injection current and an arbitrarily intense electromagnetic wave. We assume that the electronhole system is in quasiequilibrium due to the rapid carrier-carrier intraband scattering. The analysis is based on the generalized Bloch equations1 for semiconductors. Although the fast carrier scattering heavily damps the electronic coherence, it nevertheless allows the medium to follow adiabatically the relatively slowly varying field fluctuations. As a consequence, the resonance fluorescence spectra reveal asymmetric dips generated by pump scattering off carrier-density pulsations induced by the interference between the pump and vacuum mode. Similar to the two-level resonance fluorescence and probe absorption, the semiconductor probe absorption coefficient equals the difference between the resonance fluorescence and reabsorption coefficients. The results are important for nonlinear semiconductor spectroscopy and semiconductor laser instabilities.