Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Annual Meeting Optical Society of America

Pump field modulation of resonance fluorescence in semiconductors

Markus Lindberg, Sunghyuck An, Stephan W. Koch, Murray Sargent

Published Jan 1, 1988• 0 citations
Publisher

Abstract

We investigate the resonance fluorescence spectrum of a bulk semiconductor subject to an injection current and an arbitrarily intense electromagnetic wave. We assume that the electronhole system is in quasiequilibrium due to the rapid carrier-carrier intraband scattering. The analysis is based on the generalized Bloch equations1 for semiconductors. Although the fast carrier scattering heavily damps the electronic coherence, it nevertheless allows the medium to follow adiabatically the relatively slowly varying field fluctuations. As a consequence, the resonance fluorescence spectra reveal asymmetric dips generated by pump scattering off carrier-density pulsations induced by the interference between the pump and vacuum mode. Similar to the two-level resonance fluorescence and probe absorption, the semiconductor probe absorption coefficient equals the difference between the resonance fluorescence and reabsorption coefficients. The results are important for nonlinear semiconductor spectroscopy and semiconductor laser instabilities.

DOI
10.1364/oam.1988.wr2

Related papers

Strong-field modulation of semiconductor luminescence spectra

Markus Lindberg, Sunghyuck An, Stephan W. Koch +1 more

We investigate the resonance fluorescence spectrum of a bulk semiconductor subject to an injection current and an arbitrarily intense electromagnetic wave. We assume that the electron-hole system is in quasiequilibrium due to the rapid carrier-carrier intraband scattering. The analysis is based on the generalized Bloch equations for semiconductors. Although the fast carrier scattering heavily damps the electronic coherence, it nevertheless allows the total carrier density to adiabatically follow the relatively slowly varying field fluctuations. As a consequence, the resonance fluorescence spectra reveal an asymmetric peak generated by pump scattering from carrier-density pulsations induced by the interference between the pump and a vacuum mode. Similar to the two-level fluorescence and probe absorption, the semiconductor-probe absorption coefficient equals the difference between the resonance fluorescence and reabsorption coefficients. The results are important for nonlinear semiconductor spectroscopy and semiconductor laser instabilities.

Physical Review A•Oct 1, 1989•7 citations

Multiwave mixing in semiconductor media

Murray Sargent, Stephan W. Koch

We consider an intrinsic semiconductor medium subject to an injection current, an arbitrarily intense electromagnetic wave, and one or two non-saturating waves. We assume that the saturating wave intensity is constant throughout the interaction region and ignore transverse variations. We further assume that the carrier–carrier scattering is sufficiently fast that the carriers are described approximately by Fermi-Dirac distributions. We find that the probe-wave propagation is described by Beer’s law or coupled-mode equations. These equations are determined by a Fourier expansion technique highly developed for two-level atoms. The absorption and coupling coefficients experience asymmetric dips generated by pump scattering off carrier-density pulsations induced by the pump–probe interference. These effects are reminiscent of coherent-dip phenomena well-known in two-level systems but differ significantly in form.

Annual Meeting Optical Society of America•Jan 1, 1988•0 citations

Multiwave mixing in semiconductor laser media

Murray Sargent, Fenglei Zhou, S. W. Koch

This paper analyzes the interaction of a strong wave and one or two probe waves with an intrinsic semiconductor medium which is partially inverted by an injection current. The many-body interactions of the electron-hole excitations are described using recently developed generalized Bloch equations for semiconductors. Coupled-mode equations for the different light fields are derived and solved, and predict that the gain and the coupling coefficients experience asymmetric dips. These dips are generated by scattering of the strong field off carrier-density pulsations induced by the pump-probe interference.

Physical Review A•Nov 1, 1988•21 citations

Coherent and incoherent charge carrier response in the femtosecond spectroscopy of semiconductors

Frank J. Adler, Peter Kocevar, J. Schilp +2 more

We theoretically estimate the possibility of detectable coherence effects in nonlinear femtosecond pump-and-probe absorption spectroscopy of semiconductors at high excitation energies and densities by hybridizing the quantum mechanical equations of motion for the intraband and interband density matrices of the photoexcited carriers with an ensemble Monte Carlo simulation of the detailed scattering dynamics. We predict realizable experimental scenarios for Rabi-type oscillations in the transient absorption change at the excitation frequency.

Semiconductor Science and Technology•May 1, 1994•6 citations

Exciton absorption in semiconductor quantum wells driven by a strong intersubband pump field

Ansheng Liu, Cun‐Zheng Ning

Optical interband excitonic absorption of semiconductor quantum wells (QW’s) driven by a coherent pump field is investigated on the basis of semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW’s. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron–hole pairs in the QW structure is low, the pump field induces an Autler–Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron–hole pairs is increased, the split contrast (the ratio between the maximum and the minimum values) is decreased, because the exciton effect is suppressed at higher densities owing to the many-body screening.

Journal of the Optical Society of America B•Mar 1, 2000•24 citations

On the correct form of the nonlinear optical susceptibility in strongly-driven semiconductor quantum dots

John Boviatsis, Emmanuel Paspalakis

I recent years, significant attention has been given to nonlinear optical phenomena, such as nonlinear optical absorption and dispersion, derived from a driven quantum transition of semiconductor nanostructures, such as semiconductor quantum wells, quantum disks and mainly quantum dots. An important issue that is widely studied is the effect of probe electromagnetic field intensity on the total (nonlinear) absorption coefficient and on the total (nonlinear) index of refraction. Some of the phenomena that are commonly found for large electromagnetic field intensities are the creation of a strong dip in the absorption spectrum near or at resonance (the so-called bleaching effect), negative absorption near or at resonance that leads to optical gain and the change of the slope of the total index of refraction near or at resonance from negative to positive that changes the behavior of the system from fast to slow light. Unfortunately, these phenomena do not exist and are artifacts of a common abuse of the theoretical methodology for the study of the total absorption coefficient and the total index of refraction. The main error is that the total absorption coefficient and the total index of refraction was initially derived from density matrix equations using perturbation theory and includes first-order (linear) as well as third-order (nonlinear) terms. This method gives correct results for small electromagnetic field intensities and it leads to saturation of absorption and dispersion in this regime. However, for larger intensities it gives the misleading results mentioned above due to either failure of the order of perturbation theory considered in the derivation of the total absorption coefficient and the total index of refraction or even failure of perturbation theory at all in the treatment of the problem. In this work, we revisit the problem of the total absorption coefficient and the total index of refraction in a symmetric semiconductor quantum dot structure (we choose the example of a core-shell quantum dot) under a strong probe field excitation. We use the two-level model, solve the relevant density matrix equations under the rotating wave approximation and under steady state conditions, and obtain the correct form of the nonlinear optical susceptibility that is then used for the derivation of the formulae of the total absorption coefficient and the total index of refraction under the interaction with a strong probe field. Actually, the commonly used perturbation theory formulae can be obtained by our formulae using a series expansion and keeping terms up to second order in electric field amplitude. We also derive the electronic structure of the quantum dot system by solving numerically the time-independent Schrodinger equation, under the effective mass approximation, using the potential morphing method and obtain the energy difference and the electric dipole matrix element for the relevant transitions of the quantum dot system. Then, for the specific quantum dot system we compare the results of the total absorption coefficient and the total index of refraction for the two methodologies (the perturbation result and our result) for different electromagnetic field intensities.

Journal of Nanomedicine & Nanotechnology•Aug 27, 2015•0 citations
We investigate the resonance fluorescence spectrum of a bulk semiconductor subject to an injection current and an arbitrarily intense electromagnetic wave. We assume that the electronhole system is in quasiequilibrium due to the rapid carrier-carrier intraband scattering. The analysis is based on the generalized Bloch equations1 for semiconductors. Although the fast carrier scattering heavily damps the electronic coherence, it nevertheless allows the medium to follow adiabatically the relatively slowly varying field fluctuations. As a consequence, the resonance fluorescence spectra reveal asymmetric dips generated by pump scattering off carrier-density pulsations induced by the interference between the pump and vacuum mode. Similar to the two-level resonance fluorescence and probe absorption, the semiconductor probe absorption coefficient equals the difference between the resonance fluorescence and reabsorption coefficients. The results are important for nonlinear semiconductor spectroscopy and semiconductor laser instabilities.
We investigate the resonance fluorescence spectrum of a bulk semiconductor subject to an injection current and an arbitrarily intense electromagnetic wave. We assume that the electron-hole system is in quasiequilibrium due to the rapid carrier-carrier intraband scattering. The analysis is based on the generalized Bloch equations for semiconductors. Although the fast carrier scattering heavily damps the electronic coherence, it nevertheless allows the total carrier density to adiabatically follow the relatively slowly varying field fluctuations. As a consequence, the resonance fluorescence spectra reveal an asymmetric peak generated by pump scattering from carrier-density pulsations induced by the interference between the pump and a vacuum mode. Similar to the two-level fluorescence and probe absorption, the semiconductor-probe absorption coefficient equals the difference between the resonance fluorescence and reabsorption coefficients. The results are important for nonlinear semiconductor spectroscopy and semiconductor laser instabilities.
We consider an intrinsic semiconductor medium subject to an injection current, an arbitrarily intense electromagnetic wave, and one or two non-saturating waves. We assume that the saturating wave intensity is constant throughout the interaction region and ignore transverse variations. We further assume that the carrier–carrier scattering is sufficiently fast that the carriers are described approximately by Fermi-Dirac distributions. We find that the probe-wave propagation is described by Beer’s law or coupled-mode equations. These equations are determined by a Fourier expansion technique highly developed for two-level atoms. The absorption and coupling coefficients experience asymmetric dips generated by pump scattering off carrier-density pulsations induced by the pump–probe interference. These effects are reminiscent of coherent-dip phenomena well-known in two-level systems but differ significantly in form.
This paper analyzes the interaction of a strong wave and one or two probe waves with an intrinsic semiconductor medium which is partially inverted by an injection current. The many-body interactions of the electron-hole excitations are described using recently developed generalized Bloch equations for semiconductors. Coupled-mode equations for the different light fields are derived and solved, and predict that the gain and the coupling coefficients experience asymmetric dips. These dips are generated by scattering of the strong field off carrier-density pulsations induced by the pump-probe interference.
We theoretically estimate the possibility of detectable coherence effects in nonlinear femtosecond pump-and-probe absorption spectroscopy of semiconductors at high excitation energies and densities by hybridizing the quantum mechanical equations of motion for the intraband and interband density matrices of the photoexcited carriers with an ensemble Monte Carlo simulation of the detailed scattering dynamics. We predict realizable experimental scenarios for Rabi-type oscillations in the transient absorption change at the excitation frequency.
Optical interband excitonic absorption of semiconductor quantum wells (QW’s) driven by a coherent pump field is investigated on the basis of semiconductor Bloch equations. The pump field has a photon energy close to the intersubband spacing between the first two conduction subbands in the QW’s. An external weak optical field probes the interband transition. The excitonic effects and pump-induced population redistribution within the conduction subbands in the QW system are included. When the density of the electron–hole pairs in the QW structure is low, the pump field induces an Autler–Townes splitting of the exciton absorption spectrum. The split size and the peak positions of the absorption doublet depend not only on the pump frequency and intensity but also on the carrier density. As the density of the electron–hole pairs is increased, the split contrast (the ratio between the maximum and the minimum values) is decreased, because the exciton effect is suppressed at higher densities owing to the many-body screening.
I recent years, significant attention has been given to nonlinear optical phenomena, such as nonlinear optical absorption and dispersion, derived from a driven quantum transition of semiconductor nanostructures, such as semiconductor quantum wells, quantum disks and mainly quantum dots. An important issue that is widely studied is the effect of probe electromagnetic field intensity on the total (nonlinear) absorption coefficient and on the total (nonlinear) index of refraction. Some of the phenomena that are commonly found for large electromagnetic field intensities are the creation of a strong dip in the absorption spectrum near or at resonance (the so-called bleaching effect), negative absorption near or at resonance that leads to optical gain and the change of the slope of the total index of refraction near or at resonance from negative to positive that changes the behavior of the system from fast to slow light. Unfortunately, these phenomena do not exist and are artifacts of a common abuse of the theoretical methodology for the study of the total absorption coefficient and the total index of refraction. The main error is that the total absorption coefficient and the total index of refraction was initially derived from density matrix equations using perturbation theory and includes first-order (linear) as well as third-order (nonlinear) terms. This method gives correct results for small electromagnetic field intensities and it leads to saturation of absorption and dispersion in this regime. However, for larger intensities it gives the misleading results mentioned above due to either failure of the order of perturbation theory considered in the derivation of the total absorption coefficient and the total index of refraction or even failure of perturbation theory at all in the treatment of the problem. In this work, we revisit the problem of the total absorption coefficient and the total index of refraction in a symmetric semiconductor quantum dot structure (we choose the example of a core-shell quantum dot) under a strong probe field excitation. We use the two-level model, solve the relevant density matrix equations under the rotating wave approximation and under steady state conditions, and obtain the correct form of the nonlinear optical susceptibility that is then used for the derivation of the formulae of the total absorption coefficient and the total index of refraction under the interaction with a strong probe field. Actually, the commonly used perturbation theory formulae can be obtained by our formulae using a series expansion and keeping terms up to second order in electric field amplitude. We also derive the electronic structure of the quantum dot system by solving numerically the time-independent Schrodinger equation, under the effective mass approximation, using the potential morphing method and obtain the energy difference and the electric dipole matrix element for the relevant transitions of the quantum dot system. Then, for the specific quantum dot system we compare the results of the total absorption coefficient and the total index of refraction for the two methodologies (the perturbation result and our result) for different electromagnetic field intensities.