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Optics & Laser Technology

Influence of nonlinear absorption effects on optical bistability in semiconductor ring resonators

Li Wei, Shaowen Song, You‐Nian Wang

Published Oct 5, 2004• 4 citations
Publisher
DOI
10.1016/j.optlastec.2004.08.001

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Ternary II-VI semiconductors, like CdSxSe1-x or ZnxCd1-xS, were prepared by thermal evaporation of binary semiconductors from a double source. The influence of substrate temperature during thin film deposition and of thermal annealing in argon atmosphere on absorption edge steepness is studied. A high absorption edge steepness is advantageous to achieve large resonant optical nonlinearities, like absorption bistability and electronic nonlinearities. The position of the absorption edge can be tuned by choosing a proper film composition. Thermally induced optical bistability is demonstrated. Electronic nonlinearities are investigated in ns- and ps-pump-probe experiments. Fast bleaching with < 60 ps relaxation time is observed at the absorption edge. The maximum bleaching coefficient for CdS0.69Se0.31 films is 1.4 cm/kW at (lambda) equals 587 nm for pumping with (lambda) equals 377 nm. Annealing the films showed no effect on the relaxation time, but the bleaching coefficient was increased by a factor of five.
We analyze theoretically the nonlinear phenomenon of optical bistability inside a ring resonator formed with a silicon-waveguide nanowire and derive an exact parametric relation connecting the output intensity to the input intensity. Our input-output relation accounts for linear losses, the Kerr nonlinearity, two-photon absorption, free-carrier-induced absorption and dispersion, and thermo-optic effects within the resonator. Based on our study, we generalize the standard definition of effective length to allow for all possible losses within a silicon ring resonator. We also present a simplified version of the bistable phenomenon valid for resonators operating in a regime in which losses resulting from two-photon absorption are relatively small. Our analytical results provide clear insight into the physics behind optical bistability and may be useful for designing silicon-based optical memories.
A novel optical inverted bistable switch based on a nonlinear fiber ring resonator (FRR), which contains a semiconductor optical amplifier (SOA) in the loop, have been analyzed and experimentally demonstrated. The optical bistability phenomenon is obtained due to the combined nonlinear effects of the transmission characteristics of the resonator and the SOA's gain property. A complete theoretical analysis and supporting simulations are presented. A working prototype is build using commercial optical components. Experimental results show switching speed in tens of MHz with rising and falling times lower than 10 ns. Limitations in switching speed are caused by the length of the fiber loop. Therefore, improvements in operating frequencies can be increased up to GHz range if the length of the loop is reduced to the order of centimeters.