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European Quantum Electronics Conference (EQEC)

Optical bistability in direct semiconductor resonators

Ulf Peschel, Dirk Michaelis, Thomas Peschel, F. Lederer

Published Aug 24, 2005• 0 citations
Publisher
DOI
10.1109/eqec.1994.698426

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Within the framework of a simple numerical model, we investigate the optical properties of a laser-excited direct-band-gap semiconductor (CdS) in the case when both free and bound electron-hole pairs are present. At low temperatures the ionization of excitons proceeds via a first-order phase transition, which is closely related to the Mott transition, and we argue that in direct-band-gap semiconductors it is not suppressed by the electron-hole liquid condensation, as it is in indirect-band-gap materials. The existence of the two corresponding ionization phases with different optical properties is shown to result in optical bistability (OB), which is quite similar to the increasing-absorption (resonatorless) OB but has some peculiarities of its own. Our model also predicts another optical manifestation of this ionization phase transition---the possibility of absorption oscillations at resonant excitation of excitons.
The optical absorption coefficient γ of a thin film of a Peierls semiconductor has been calculated in the dipole approximation for direct interband transitions as a function of intensity I and central frequency ω 0 of a quasi-monochromatic frequency spectrum near the lower optical transition edge. It is shown that the γ( I , ω 0 ) dependence is strongly nonlinear, and within a certain region of I and ω 0 variation, not single-valued, which indicates the onset of resonator-free optical bistability with increasing absorption.