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OPTICAL CHARACTERIZATION OF Nb/Al SUPERCONDUCTING NANOWIRE SINGLE PHOTON DETECTORS

Zhen J. Xu

Published Jan 1, 2015• 0 citations
OpenAlex

Abstract

This article is a study of superconducting niobium(Nb)nanowires used as optical and near-infrared single photon detectors.In this paper,the fabrication process of Nb+Al based superconducting nanowire single photon detectors(SNSPD)using lift-off process will be presented.Transition temperature(Tc)of devices is measured with PPMS and good devices are chosen.With a DC bias current applied close to the critical current(Ic),the nanowire showed an electrical signal when illuminated by a laser pulse at the telecommunications wavelength(1550nm).The detection efficiency of 5nm-thickness SNSPD are measured.

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IEEE International Superconductive Electronics Conference (ISEC)•Jul 1, 2015•0 citations
This article is a study of superconducting niobium(Nb)nanowires used as optical and near-infrared single photon detectors.In this paper,the fabrication process of Nb+Al based superconducting nanowire single photon detectors(SNSPD)using lift-off process will be presented.Transition temperature(Tc)of devices is measured with PPMS and good devices are chosen.With a DC bias current applied close to the critical current(Ic),the nanowire showed an electrical signal when illuminated by a laser pulse at the telecommunications wavelength(1550nm).The detection efficiency of 5nm-thickness SNSPD are measured.
We report the fabrication and characterization of a niobium titanium nitride (NbTiN)-based superconducting nanowire single-photon detector (SSPD or SNSPD) on the Si waveguide toward the realization of waveguide-coupled SSPD. The device consists of a silicon optical waveguide fabricated using a silicon-on-insulator (SOI) substrate and a 100-nm-wide NbTiN nanowire constructed on the waveguide, with an inductor to prevent latch operation. For the fabricated device, the observed superconducting critical temperature and critical current were 7.85 K and 34.4 μA at 0.3 K, respectively. We investigated the optical response of the fabricated device and found that the device exhibited a single-photon response by measuring of the input power dependence of the output count rate. Furthermore, the fabricated device showed a clear bias current dependence of the output counts similar to conventional SSPDs, and the pulse-generation probability is estimated to be 90.1% based on two assumptions: a sigmoidal model to the detection efficiency and the device has a 100% pulse-generation probability at the saturated region.
Single photon detection advanced rapidly in the last decade. The superconducting nanowire single-photon detector (SNSPD) is an emerging technology, which offers low dark count rates, broadband sensitivity from visible to mid-infrared wavelengths and very high quantum efficiency. All these features are appealing for future emerging applications in remote gas sensing, quantum key distribution and quantum information processing. By enclosing the detector in an optical cavity, tuned to the operating wavelength, the total system detection of the SNSPD is improved. Based on the cavity design, the detector absorption is boosted at the desired experimental wavelength. Devices have been fabricated and tested, in this thesis, with enhanced detection efficiency at near-infrared, infrared and mid-infrared wavelengths. NbTiN detectors fabricated on Ta2O5 / SiO2 distributed Bragg reflectors (DBR) for front-side coupling exhibit a system detection efficiency of ≈ 90% at λ = 940 nm for the best device measured. SNSPDs were also fabricated in NbTiN on metallic mirrors for back-side coupling for 1550 and 2333 nm experimental wavelengths. The first design exhibited a system detection efficiency of ≈ 84.5%, at λ = 1550 nm for the best device measured. The second exhibited low system detection efficiency since the device suffered from unexpectedly high dark count rate mainly due to blackbody radiation at 2.2 K. However, it was possible to measure the timing jitter of this device at 350 mK indicating a FWHM of 84 ps. Another technique to improve the total system detection efficiency of the SNSPD, is by fabricating a hairpin-shaped nanowire atop a single mode waveguide. In this design, photons travel through the waveguide and via evanescent coupling are absorbed in the nanowire. These SNSPD devices have been designed to thread along single mode Si ridge waveguides using a hairpin-shaped nanowire structure, which offers enhanced coupling and absorption efficiency via evanescent coupling. These ultra-thin superconducting MoSi detectors are precisely patterned on top of a single mode Si waveguide (600 nm) with alignment error less than 40 nm. Low temperature electrical and nano-optical characterization was carried out using a two-stage pulse tube (PT) coldhead, using an additional 4He / 3He sorption pump, low vibration characterization of SNSPD devices at 350 mK was carried out. Characterised devices exhibit low dark count rate <5 counts per second and timing jitter of ≈ 83 ps full width half maximum (FWHM) at wavelength (λ) = 1550 nm and at critical current ≈ 30 µA.
Abstract The detection efficiency (DE) of superconducting nanowire single-photon detectors (SNSPDs) at 1550 nm has been significantly improved in the past decades as a result of evolution of the optical structure, the materials, and the fabrication process. We discuss the general optical design for a high-efficiency SNSPD based on dielectric optical films that can detect wavelengths from visible to near infrared regions. This structure shows close-to-unity absorption and good insensitivity to the fine wavelength and the incident angle. We demonstrate an SNSPD specifically fabricated for the detection of 1064 nm wavelength with a maximal system DE of 87.4% ± 3.7%. The DEs of the SNSPDs for visible and near infrared wavelengths are also summarized and compared with those of semiconducting detectors.
Superconducting nanowire single photon detectors (SNSPD) offer excellent performance for infrared single photon detection, combining high efficiency, low timing jitter, low dark count rates and high photon counting rates. Promising application areas for SNSPDs include quantum key distribution, space-to-ground communications and single photon remote sensing [1]. SNSPDs are typically made with ultrathin niobium nitride (NbN) films with thickness 4 nm and a superconducting transition temperature above 9 K. NbN offers high performance in the near infrared but their sensitivity drops at wavelengths beyond 2 um. There is growing interest in potential photon counting applications in the mid infrared domain (for example remote sensing of greenhouse gases in the atmosphere [2]). One way to overcome the wavelength limit in NbN SNSPDs is to use films with a lower superconducting energy gap [3]. Here we report on the study of SNSPDs fabricated with thin films of titanium nitride (TiN). We compare TiN films deposited by atomic layer deposition (ALD) and by magnetron sputtering. The TiN films range in thickness from 5 to 60 nm, with superconducting transition temperatures from ~1 K to 3.5 K. We have analyzed the films via transmission electron microscopy and variable angle spectroscopic ellipsometry. We characterize TiN SNSPDs performance from near to mid-infrared at wavelengths (1-4 um) with fast optical parametric oscillator (OPO) source. We compare the performance of TiN SNSPDs to devices based on other lower gap materials: MoSi, NbTiN, WSi. [1] Natarajan et al Superconductor Science and Technology 25 063001 (2012) [2] Abshire et al Laser Applications to Chemical, Security and Environmental Analysis, (Optical Society of America, 2008) paper LMA4 [3] Verma et al Applied Physics Letters 105 022602 (2014)
Increasing the detection efficiency (DE) is a hot issue in the development of the superconducting nanowire single photon detector (SNSPD). In this work, a cavity-integrated structure coupled to the SNSPD is used to enhance the light absorption of nanowire. Ultra-thin Nb films are successfully prepared by magnetron sputtering, which are used to fabricate Nb/Al SNSPD with the curve of 100 nm and the square area of 4 × 4 μm 2 by sputtering and the lift-off method. To characterize the optical and electrical performance of the cavity-integrated SNSPD, a reliable cryogenic research system is built up based on a He 3 system. To satisfy the need of light coupling, a packaging structure with collimator is conducted. Both DE and the dark count rates increase with l b . It is also found that the DE of SNSPD with cavities can be up to 0.17% at the temperature of 0.7K under the infrared light of 1550 nm, which is obviously higher than that of the SNSPD directly fabricated upon silicon without any cavity structure.
We have fabricated and characterized a niobium titanium nitride (NbTiN)-based superconducting nanowire single- photon detector (SSPD or SNSPD) on the silicon (Si) waveguide toward the realization of waveguide-coupled SSPD. The superconducting critical temperature and critical current were 7.85 K and 34.4 μA at 0.3 K, respectively. We investigated the optical response of the fabricated device and found that the device exhibited a single-photon response. Furthermore, the fabricated device showed a clear bias current dependence of the output counts similar to conventional SSPDs.